페이지 99 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT53E1536M32D4DT-046 AAT:A	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,952	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M64D4SQ-046 AAT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,584	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1536M32D4DT-046 AAT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,872	-	-	-	-	-	-	-	-	-	-	-	-
MTFC128GAPALNS-IT	Micron Technology Inc.	MODULE EMMC 128GB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,928	-	-	-	-	-	-	-	-	-	-	-	-
MTFC128GAPALNS-IT TR	Micron Technology Inc.	MODULE EMMC 128GB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,952	-	-	-	-	-	-	-	-	-	-	-	-
MT29VZZZBD9DQKPR-046 W.9M9	Micron Technology Inc.	IC FLASH MEM 16.75G X64 MCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,768	-	-	-	-	-	-	-	-	-	-	-	-
MT29VZZZBD9DQKPR-046 W.9M9 TR	Micron Technology Inc.	IC FLASH MEM 16.75G X64 MCP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,544	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M64D4SQ-046 AIT:A	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,656	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1536M32D4DT-046 AIT:A	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,928	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M64D4SQ-046 AIT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,000	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1536M32D4DT-046 AIT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,280	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M64D4SQ-046 WT:A	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,840	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1536M32D4DT-046 WT:A	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,920	-	-	-	-	-	-	-	-	-	-	-	-
MT53E768M64D4SQ-046 WT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,440	-	-	-	-	-	-	-	-	-	-	-	-
MT53E1536M32D4DT-046 WT:A TR	Micron Technology Inc.	IC DRAM LPDDR4 WFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,760	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2T08EMHAFJ4-3ITFES:A	Micron Technology Inc.	IC FLASH 2T PARALLEL 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고7,168	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	333MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	-	-
MT29F2T08EMHAFJ4-3ITFES:A TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 132VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Tb (256G x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고3,408	FLASH	FLASH - NAND	2Tb (256G x 8)	Parallel	333MHz	-	-	2.5V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	-	-
MT53D4DBNW-DC TR	Micron Technology Inc.	IC DRAM LPDDR4 SMD Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,736	-	-	-	-	-	-	-	-	-	-	-	-
MT53D512M64D4HR-053 WT:D TR	Micron Technology Inc.	IC DRAM LPDDR4 32G SMD Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,504	-	-	-	-	-	-	-	-	-	-	-	-
MT53D512M32D2DS-053 AUT:D	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고4,448	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-40°C ~ 125°C	Surface Mount	-	-
MT53D512M32D2DS-053 AUT:D TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (512M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고2,416	DRAM	SDRAM - Mobile LPDDR4	16Gb (512M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-40°C ~ 125°C	Surface Mount	-	-
MT53E512M64D4NK-053 WT:D	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,856	-	-	-	-	-	-	-	-	-	-	-	-
MT53E512M64D4NK-046 WT:D	Micron Technology Inc.	IC DRAM LPDDR4 BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,512	-	-	-	-	-	-	-	-	-	-	-	-
MT53D1024M32D4DT-046 WT:D	Micron Technology Inc.	IC DRAM LPDDR4 32G FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고5,328	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	2.133GHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	-	-
MT53E512M64D4NK-053 WT:D TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,688	-	-	-	-	-	-	-	-	-	-	-	-
MT53E512M64D4NK-046 WT:D TR	Micron Technology Inc.	IC DRAM LPDDR4 BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,976	-	-	-	-	-	-	-	-	-	-	-	-
MT53D512M64D8HR-053 WT:B TR	Micron Technology Inc.	IC DRAM LPDDR4 32G SMD Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,136	-	-	-	-	-	-	-	-	-	-	-	-
MT53D1024M32D4DT-046 WT:D TR	Micron Technology Inc.	IC DRAM LPDDR4 32G FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 2.133GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고7,744	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	2.133GHz	-	-	1.1V	-30°C ~ 85°C (TC)	Surface Mount	-	-