Micron Technology Inc. 제품

MT29F64G08CBAAAL74A3WC1

Micron Technology Inc.

IC FLASH 64GBIT WAFER

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 64Gb (8G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29PZZZ4D4BKESK-18 W.94H TR

Micron Technology Inc.

MOD EMMC NAND 4GB 162VFBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

M29W400DB45N6E

Micron Technology Inc.

IC FLASH 4MBIT 45NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8, 256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 45ns
• Access Time: 45ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

MT29E256G08CMCABJ2-10Z:A

Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 132TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gb (32G x 8)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 132-TBGA
• Supplier Device Package: 132-TBGA (12x18)

패키지: 132-TBGA

MT41K64M16JT-15E:G TR

Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 667MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.5ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

MT29F16G08ABCBBH1-12IT:B

Micron Technology Inc.

IC FLASH 16GBIT 100VBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 16Gb (2G x 8)
• Memory Interface: Parallel
• Clock Frequency: 83MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-VBGA
• Supplier Device Package: 100-VBGA (12x18)

패키지: 100-VBGA

MT29F128G08CFAAAWP:A

Micron Technology Inc.

IC FLASH 128GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 128Gb (16G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

MT29C1G12MAACYAMD-5 IT

Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 1Gb (64M x 16)(NAND), 512Mb (16M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 130-VFBGA
• Supplier Device Package: 130-VFBGA (8x9)

패키지: 130-VFBGA

MT46H32M32LFB5-6 IT:B

Micron Technology Inc.

IC SDRAM 1GBIT 167MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 1Gb (32M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

MT46H32M16LFBF-6 IT:C

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-VFBGA
• Supplier Device Package: 60-VFBGA (8x9)

패키지: 60-VFBGA

MT47H32M16BN-5E:D TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 84FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 600ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 84-TFBGA
• Supplier Device Package: 84-FBGA (10x12.5)

패키지: 84-TFBGA

MT29F4T08EYCBBG9-37ES:B TR

Micron Technology Inc.

IC FLASH 4TBIT 267MHZ LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Tb (512G x 8)
• Memory Interface: Parallel
• Clock Frequency: 267MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT41K128M16JT-125 M AIT:K

Micron Technology Inc.

IC SDRAM 2GBIT 800MHZ 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.75ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

M25P16-VMN6P

Micron Technology Inc.

IC FLASH 16MBIT 75MHZ 8SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 16Mb (2M x 8)
• Memory Interface: SPI
• Clock Frequency: 75MHz
• Write Cycle Time - Word, Page: 15ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

MT28EW128ABA1LPC-0SIT

Micron Technology Inc.

IC FLASH 128MBIT 70NS 64LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 95ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

MT53D768M32D4BD-053 WT:C

Micron Technology Inc.

IC DRAM 24G 1866MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 24Gb (768M x 32)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MTFC128GAPALNS-AIT ES TR

Micron Technology Inc.

IC FLASH 1T MMC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Tb (128G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53D2G32D8QD-053 WT ES:E

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA 8DP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29TZZZ7D7DKLAH-107 W ES.9B7

Micron Technology Inc.

ALL IN ONE MCP 280G

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53B512M32D2NP-062 AAT:C TR

Micron Technology Inc.

IC DRAM LPDDR4 16GB FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 16Gb (512M x 32)
• Memory Interface: -
• Clock Frequency: 1.6GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 0.6V, 1.1V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 200-WFBGA
• Supplier Device Package: 200-WFBGA (10x14.5)

패키지: 200-WFBGA

MT29TZZZ8D5JKERL-107 W.95E TR

Micron Technology Inc.

IC FLASH MEM 72G MCP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29F2G16ABAGAWP-AAT-G-TR

Micron Technology Inc.

SLC 2G 128MX16 TSOP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT62F768M64D4EK-023-AIT-C

Micron Technology Inc.

LPDDR5 48GBIT 64 441/441 TFBGA 4

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5X
• Memory Size: 48Gbit
• Memory Interface: LVSTL
• Clock Frequency: 4.266 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.01V ~ 1.12V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 441-TFBGA
• Supplier Device Package: 441-TFBGA (14x14)

패키지: -

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MT29F2T08EMLGEJ4-ITF-G

Micron Technology Inc.

TLC 2T 256GX8 VBGA QDP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote

MT62F4DACA-DC-TR

Micron Technology Inc.

LPDDR5 QDP Y4BM

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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MT29F4T08EQLCEG8-R-C-TR

Micron Technology Inc.

TLC 4T 512GX8 FBGA 8DP

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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MTFC32GAZAQHD-IT-TR

Micron Technology Inc.

IC FLASH 256GBIT EMMC 153VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 256Gbit
• Memory Interface: eMMC
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 153-VFBGA
• Supplier Device Package: 153-VFBGA (11.5x13)

패키지: -

MT55V512V32PT-7-5

Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous, ZBT
• Memory Size: 18Mbit
• Memory Interface: Parallel
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 4.2 ns
• Voltage - Supply: 2.375V ~ 3.465V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

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