Micron Technology Inc. 제품

M29F400FB55M3T2 TR

Micron Technology Inc.

IC FLASH 4MBIT 55NS 44SO

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8, 256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-SOIC (0.496", 12.60mm Width)
• Supplier Device Package: 44-SO

패키지: 44-SOIC (0.496", 12.60mm Width)

M29W640GSH70ZF6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-TBGA (10x13)

패키지: 64-TBGA

M29W640GSL70ZS6F TR

Micron Technology Inc.

IC FLASH 64MBIT 70NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

패키지: 64-LBGA

MTFC4GMTEA-4M IT

Micron Technology Inc.

IC FLASH 32GBIT 153WFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 32Gb (4G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 153-WFBGA
• Supplier Device Package: 153-WFBGA (11.5x13)

패키지: 153-WFBGA

MT46H32M16LFBF-6 AT:B

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-VFBGA
• Supplier Device Package: 60-VFBGA (8x9)

패키지: 60-VFBGA

M29W640GL70ZF6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-TBGA (10x13)

패키지: 64-TBGA

MT29F4G16AACWC:C TR

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TSOP
• Supplier Device Package: 48-TSOP

패키지: 48-TSOP

MT48V8M32LFB5-10 TR

Micron Technology Inc.

IC SDRAM 256MBIT 100MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 7ns
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

MT48LC8M32B2P-7 IT TR

Micron Technology Inc.

IC SDRAM 256MBIT 143MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: 14ns
• Access Time: 6ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

MT48LC4M16A2P-7E IT:G

Micron Technology Inc.

IC SDRAM 64MBIT 143MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 64Mb (4M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 14ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

MT48LC32M8A2TG-75 L:D

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (32M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

MT28F800B3WG-9 TET TR

Micron Technology Inc.

IC FLASH 8MBIT 90NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8, 512K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 90ns
• Access Time: 90ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

MT29F1T08CUCCBH8-6R:C TR

Micron Technology Inc.

IC FLASH 1TBIT 167MHZ 152LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Tb (128G x 8)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53B4DBNQ-DC TR

Micron Technology Inc.

LPDDR4 24G 768MX32 FBGA Z0AM

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT47H256M8THN-25E:M TR

Micron Technology Inc.

IC SDRAM 2GBIT 400MHZ 63FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 2Gb (256M x 8)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 63-TFBGA
• Supplier Device Package: 63-FBGA (8x10)

패키지: 63-TFBGA

MT48LC8M16A2B4-6A XIT:L

Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 167MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

패키지: 54-VFBGA

MT29F4G08ABAEAH4-S:E TR

Micron Technology Inc.

IC FLASH 4GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

MT29F4G08ABAEAH4:E

Micron Technology Inc.

IC FLASH 4GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

MT53D512M64D4HR-053 WT:D

Micron Technology Inc.

IC DRAM 32G 1866MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gb (512M x 64)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT53D1024M32D4DT-046 AUT:E

Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gb (1G x 32)
• Memory Interface: -
• Clock Frequency: 2133MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MTA4ATF51264HZ-2G6E1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 32Gb (512M x 64)
• Memory Interface: Parallel
• Clock Frequency: 1333MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.2V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29F4T08EUHAFM4-3T:A TR

Micron Technology Inc.

IC FLASH 4T PARALLEL 333MHZ

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Tb (512G x 8)
• Memory Interface: Parallel
• Clock Frequency: 333MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MTFC256GBEAZHF-WT-TR

Micron Technology Inc.

UFS 2T

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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MT25QU128ABB8E57-CSIT

Micron Technology Inc.

IC FLASH 128MBIT SPI/QUAD 166MHZ

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: 1.8ms
• Access Time: 5 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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MT62F1536M64D8EK-023-AIT-B-TR

Micron Technology Inc.

LPDDR5 96G 1.5GX64 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR5
• Memory Size: 96Gbit
• Memory Interface: Parallel
• Clock Frequency: 4.266 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 95°C
• Mounting Type: Surface Mount
• Package / Case: 441-TFBGA
• Supplier Device Package: 441-TFBGA (14x14)

패키지: -

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MT29F512G08EBLKEJ4-ITF-K

Micron Technology Inc.

TLC 512G 64GX8 VBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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MT58L256L32FS-8-5

Micron Technology Inc.

IC SRAM 8MBIT PAR 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 8Mbit
• Memory Interface: Parallel
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 8.5 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

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MT40A4G4DVN-062H-E

Micron Technology Inc.

IC DRAM 16GBIT PARALLEL 78FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 16Gbit
• Memory Interface: Parallel
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: -
• Access Time: 27 ns
• Voltage - Supply: 1.14V ~ 1.26V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-FBGA (7.5x11)

패키지: -

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