Micron Technology Inc. 제품

N25Q256A13E1241E

Micron Technology Inc.

IC FLASH 256MBIT 108MHZ 24TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mb (64M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

MTFC16GJTEC-IT

Micron Technology Inc.

IC FLASH 128GBIT 169WFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 128Gb (16G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT29C8G96MAZBADJV-5 IT

Micron Technology Inc.

IC FLASH/LPDRAM 12GBIT 168VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 8Gb (512M x 16)(NAND), 4Gb (128M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 168-VFBGA
• Supplier Device Package: 168-VFBGA (12x12)

패키지: 168-VFBGA

MTFC8GLXEA-WT TR

Micron Technology Inc.

IC FLASH 64GBIT 153WFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 64Gb (8G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 153-WFBGA
• Supplier Device Package: 153-WFBGA (11.5x13)

패키지: 153-WFBGA

MT48H16M32LFB5-75 IT:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.4ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

MT29C4G96MAYBACKD-5 WT TR

Micron Technology Inc.

IC FLASH/LPDRAM 8GBIT 137TFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 4Gb (512M x 8)(NAND), 4Gb (128M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 137-TFBGA
• Supplier Device Package: 137-TFBGA (10.5x13)

패키지: 137-TFBGA

MT46H16M32LFCM-6 L IT:B TR

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (10x13)

패키지: 90-VFBGA

M29F800DT55N1

Micron Technology Inc.

IC FLASH 8MBIT 55NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8, 512K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

MT48LC16M16A2TG-7E L:D

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 14ns
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

MT46V64M8TG-75:D TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (64M x 8)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 750ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

MT45W1MW16BAFB-856 WT TR

Micron Technology Inc.

IC PSRAM 16MBIT 85NS 54VFBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 85ns
• Access Time: 85ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (6x9)

패키지: 54-VFBGA

MT46V128M4TG-5B:F TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (128M x 4)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

MT46H8M16LFCF-75

Micron Technology Inc.

IC SDRAM 128MBIT 133MHZ 60BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 6.0ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-VFBGA
• Supplier Device Package: 60-VFBGA (8x10)

패키지: 60-VFBGA

MTFC4GMDEA-R1 IT TR

Micron Technology Inc.

IC FLASH 32GBIT 153WFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 32Gb (4G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT40A256M16GE-083E IT:B TR

Micron Technology Inc.

IC SDRAM 4GBIT 1.2GHZ 96BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR4
• Memory Size: 4Gb (256M x 16)
• Memory Interface: Parallel
• Clock Frequency: 1.2GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.26 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (14x9)

패키지: 96-TFBGA

MT28FW512ABA1HJS-0AAT TR

Micron Technology Inc.

IC FLASH 512MBIT 105NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 105ns
• Voltage - Supply: 1.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP (14x20)

패키지: 56-TFSOP (0.724", 18.40mm Width)

MT29F4G08ABADAH4-AT:D TR

Micron Technology Inc.

IC FLASH 4GBIT 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

JS28F128P33TF70A

Micron Technology Inc.

IC FLASH 128MBIT 70NS 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 40MHz
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP (14x20)

패키지: 56-TFSOP (0.724", 18.40mm Width)

M29W128GH7AZS6E

Micron Technology Inc.

IC FLASH 128MBIT 70NS 64BGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

패키지: 64-LBGA

MT29F1G01AAADDH4-ITX:D

Micron Technology Inc.

IC FLASH 1GBIT 50MHZ 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (1G x 1)
• Memory Interface: SPI
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-VFBGA
• Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

MT28FW02GBBA1LPC-0AAT

Micron Technology Inc.

IC FLASH 2G PARALLEL 64LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 105ns
• Voltage - Supply: 1.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

MT53B512M64D4TX-053 WT ES:C

Micron Technology Inc.

IC DRAM 32G 1866MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 32Gb (512M x 64)
• Memory Interface: -
• Clock Frequency: 1866MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MT52L1G64D8QC-107 WT ES:B

Micron Technology Inc.

IC DRAM 64G 933MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR3
• Memory Size: 64Gb (1G x 64)
• Memory Interface: -
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.2V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

MTFC4GMWDQ-3M AIT A

Micron Technology Inc.

MODULE EMMC 4GB 100LBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 32Gb (4G x 8)
• Memory Interface: MMC
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LBGA
• Supplier Device Package: 100-LBGA (14x18)

패키지: 100-LBGA

MT61M256M32JE-12-NIT-A-TR

Micron Technology Inc.

GDDR6 8G 256MX32 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SGRAM - GDDR6
• Memory Size: 8Gbit
• Memory Interface: POD125
• Clock Frequency: 6 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.2125V ~ 1.325V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 180-TFBGA
• Supplier Device Package: 180-FBGA (12x14)

패키지: -

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MT53E128M32D2FW-046-AUT-A

Micron Technology Inc.

LPDDR4 4G 128MX32 FBGA DDP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 4Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V
• Operating Temperature: -40°C ~ 125°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-TFBGA
• Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

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MT62FDACAK-DC

Micron Technology Inc.

LPDDR5 BGA Y42M

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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MTFC256GAVATTC-AAT

Micron Technology Inc.

UFS 2T

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote