페이지 17 - Microsemi Corporation 제품 - 다이오드 - 정류기 - 어레이 | Heisener Electronics
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Microsemi Corporation 제품 - 다이오드 - 정류기 - 어레이

기록 484
페이지  17/18
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부품 번호
제조업체
설명
패키지
재고
수량
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io) (per Diode)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Operating Temperature - Junction
Mounting Type
Package / Case
Supplier Device Package
JAN1N6674R
Microsemi Corporation

DIODE GEN PURP 500V 15A D5D

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 50µA @ 400V
  • Operating Temperature - Junction: 200°C (Max)
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
패키지: TO-254-3, TO-254AA (Straight Leads)
재고7,104
Standard
500V
15A
1.55V @ 20A
Standard Recovery >500ns, > 200mA (Io)
35ns
50µA @ 400V
200°C (Max)
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
JANTXV1N6674
Microsemi Corporation

DIODE GEN PURP 500V 15A TO254

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5mA @ 400V
  • Operating Temperature - Junction: -
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254
패키지: TO-254-3, TO-254AA (Straight Leads)
재고4,576
Standard
500V
15A
1.55V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5mA @ 400V
-
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254
JANTXV1N6673
Microsemi Corporation

DIODE GEN PURP 400V 15A TO251

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 50µA @ 320V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254
패키지: TO-254-3, TO-254AA (Straight Leads)
재고7,536
Standard
400V
15A
1.55V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
50µA @ 320V
-65°C ~ 175°C
Surface Mount
TO-254-3, TO-254AA (Straight Leads)
TO-254
JANTXV1N6660R
Microsemi Corporation

DIODE ARRAY SCHOTTKY 45V TO254AA

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 45V
  • Operating Temperature - Junction: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
패키지: TO-254-3, TO-254AA (Straight Leads)
재고5,152
Schottky
45V
15A
750mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 45V
-65°C ~ 150°C
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
1N6659
Microsemi Corporation

DIODE ARRAY GP 200V 15A TO254AA

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Operating Temperature - Junction: -
  • Mounting Type: Through Hole
  • Package / Case: TO-254-3, TO-254AA (Straight Leads)
  • Supplier Device Package: TO-254AA
패키지: TO-254-3, TO-254AA (Straight Leads)
재고3,904
Standard
200V
15A
1.2V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
TO-254-3, TO-254AA (Straight Leads)
TO-254AA
UFT5010A
Microsemi Corporation

RECTIFIER ARRAY 200V 50A TO-3

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 25A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 25A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 15µA @ 100V
  • Operating Temperature - Junction: -65°C ~ 175°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,720
Standard
100V
25A
1V @ 25A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
15µA @ 100V
-65°C ~ 175°C
-
-
-
UFT7260SM1A
Microsemi Corporation

DIODE MODULE 600V 35A SM1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM1
패키지: Module
재고2,848
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM1
UFT7260SM5D
Microsemi Corporation

DIODE MODULE 600V 35A SM5

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM5
패키지: Module
재고5,696
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM5
UFT7260SM4A
Microsemi Corporation

DIODE MODULE 600V 35A SM4

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM4
패키지: Module
재고7,248
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM4
UFT7260SM2D
Microsemi Corporation

DIODE MODULE 600V 35A SM2

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: M2
  • Supplier Device Package: SM2
패키지: M2
재고7,616
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
M2
SM2
UFT7260SM2C
Microsemi Corporation

DIODE MODULE 600V 35A SM2

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: M2
  • Supplier Device Package: SM2
패키지: M2
재고6,416
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
M2
SM2
UFT7260SM2A
Microsemi Corporation

DIODE MODULE 600V 35A SM2

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: M2
  • Supplier Device Package: SM2
패키지: M2
재고2,160
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
M2
SM2
UFT7260SM1D
Microsemi Corporation

DIODE MODULE 600V 35A SM1

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM1
패키지: Module
재고6,864
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM1
APT2X31DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 30A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 600µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고7,888
Silicon Carbide Schottky
1200V
30A
1.8V @ 30A
No Recovery Time > 500mA (Io)
0ns
600µA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
APT2X30DC120J
Microsemi Corporation

DIODE MODULE 1.2KV 30A SOT227

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 30A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 600µA @ 1200V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227
패키지: SOT-227-4, miniBLOC
재고3,344
Silicon Carbide Schottky
1200V
30A
1.8V @ 30A
No Recovery Time > 500mA (Io)
0ns
600µA @ 1200V
-
Chassis Mount
SOT-227-4, miniBLOC
SOT-227
UFT7260SM6D
Microsemi Corporation

DIODE MODULE 600V 35A SM6

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM6
패키지: Module
재고4,048
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM6
UFT7260SM6C
Microsemi Corporation

DIODE MODULE 600V 35A SM6

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM6
패키지: Module
재고3,408
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM6
UFT7260SM6A
Microsemi Corporation

DIODE MODULE 600V 35A SM6

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM6
패키지: Module
재고3,408
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM6
UFT7260SM5A
Microsemi Corporation

DIODE MODULE 600V 35A SM5

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM5
패키지: Module
재고5,872
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM5
UFT7260SM4D
Microsemi Corporation

DIODE MODULE 600V 35A SM4

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM4
패키지: Module
재고7,136
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM4
UFT7260SM4C
Microsemi Corporation

DIODE MODULE 600V 35A SM4

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM4
패키지: Module
재고3,088
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM4
UFT7260SM3D
Microsemi Corporation

DIODE MODULE 600V 35A SM3

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM3
패키지: Module
재고7,088
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM3
UFT7260SM3C
Microsemi Corporation

DIODE MODULE 600V 35A SM3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM3
패키지: Module
재고5,216
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM3
UFT7260SM3A
Microsemi Corporation

DIODE MODULE 600V 35A SM3

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 25µA @ 600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SM3
패키지: Module
재고7,536
Standard
600V
35A
1.35V @ 35A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
25µA @ 600V
-
Chassis Mount
Module
SM3
APTDC902U601G
Microsemi Corporation

DIODE MODULE 600V 90A SP1

  • Diode Configuration: 2 Independent
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 90A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 90A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 1800µA @ 600V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
패키지: SP1
재고3,392
Silicon Carbide Schottky
600V
90A
1.8V @ 90A
No Recovery Time > 500mA (Io)
0ns
1800µA @ 600V
-40°C ~ 175°C
Chassis Mount
SP1
SP1
UFT20120
Microsemi Corporation

DIODE MODULE 200V 100A

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 70ns
  • Current - Reverse Leakage @ Vr: 50µA @ 200V
  • Operating Temperature - Junction: -
  • Mounting Type: Screw Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: Module
재고6,256
Standard
200V
100A
1.25V @ 100A
Fast Recovery =< 500ns, > 200mA (Io)
70ns
50µA @ 200V
-
Screw Mount
Module
Module
MSAD70-16
Microsemi Corporation

DIODE MODULE 1.6KV 70A D1

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io) (per Diode): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.48V @ 200A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5mA @ 1600V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D1
  • Supplier Device Package: D1
패키지: D1
재고7,568
Standard
1600V
70A
1.48V @ 200A
Standard Recovery >500ns, > 200mA (Io)
-
5mA @ 1600V
-
Chassis Mount
D1
D1
MSAD165-18
Microsemi Corporation

DIODE MODULE 1.8KV 165A D2

  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io) (per Diode): 165A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 300A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1800V
  • Operating Temperature - Junction: -
  • Mounting Type: Chassis Mount
  • Package / Case: D2
  • Supplier Device Package: -
패키지: D2
재고5,440
Standard
1800V
165A
1.4V @ 300A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1800V
-
Chassis Mount
D2
-