페이지 147 - Microsemi Corporation 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-843
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

Microsemi Corporation 제품

기록 46,511
페이지  147/1,662
이미지
부품 번호
제조업체
설명
패키지
재고
수량
APT34M120J
Microsemi Corporation

MOSFET N-CH 1200V 34A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고5,568
2N2907AL
Microsemi Corporation

TRANS PNP 60V 0.6A TO-18

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
  • Power - Max: 500mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
패키지: TO-206AA, TO-18-3 Metal Can
재고6,960
hot 2304
Microsemi Corporation

TRANS BIPO 20V 4W 55BT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 10.2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
패키지: 55BT
재고813,336
1PMT5916CE3/TR13
Microsemi Corporation

DIODE ZENER 4.3V 3W DO216AA

  • Voltage - Zener (Nom) (Vz): 4.3V
  • Tolerance: ±2%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 6 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: DO-216AA
패키지: DO-216AA
재고5,712
JANTXV1N5546D-1
Microsemi Corporation

DIODE ZENER 33V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 33V
  • Tolerance: ±1%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 10nA @ 29.7V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35 (DO-204AH)
패키지: DO-204AH, DO-35, Axial
재고4,768
JAN1N4482CUS
Microsemi Corporation

DIODE ZENER 51V 1.5W D-5A

  • Voltage - Zener (Nom) (Vz): 51V
  • Tolerance: ±2%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 40.8V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
패키지: SQ-MELF, A
재고2,992
JANTX1N4565AUR-1
Microsemi Corporation

DIODE ZENER 3V 500MW DO213AA

  • Voltage - Zener (Nom) (Vz): 3V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA
패키지: DO-213AA (Glass)
재고6,080
CDLL963B
Microsemi Corporation

DIODE ZENER 12V 500MW DO213AB

  • Voltage - Zener (Nom) (Vz): 12V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 11.5 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 9.1V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
패키지: DO-213AB, MELF
재고3,376
1N5346C/TR8
Microsemi Corporation

DIODE ZENER 9.1V 5W T18

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±2%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 2 Ohms
  • Current - Reverse Leakage @ Vr: 7.5µA @ 6.6V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
패키지: T-18, Axial
재고3,472
1N5368B/TR8
Microsemi Corporation

DIODE ZENER 47V 5W T18

  • Voltage - Zener (Nom) (Vz): 47V
  • Tolerance: ±5%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 25 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 33.8V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
패키지: T-18, Axial
재고4,832
3EZ91D/TR12
Microsemi Corporation

DIODE ZENER 91V 3W DO204AL

  • Voltage - Zener (Nom) (Vz): 91V
  • Tolerance: ±20%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 115 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 69.2V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고3,936
3EZ100D10E3/TR12
Microsemi Corporation

DIODE ZENER 100V 3W DO204AL

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±10%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 160 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 76V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고2,336
S16-4150/TR7
Microsemi Corporation

DIODE ARRAY GP 50V 400MA 16SOIC

  • Diode Configuration: 8 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io) (per Diode): 400mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 50V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고6,720
hot PD70201ILQ-TR
Microsemi Corporation

IC POE CONTROLLER PD PSE 32QFN

  • Type: Controller (PD)
  • Number of Channels: 1
  • Power - Max: 47.7W
  • Internal Switch(s): No
  • Auxiliary Sense: No
  • Standards: 802.3at (PoE+), 802.3af (PoE)
  • Voltage - Supply: 0 V ~ 57 V
  • Current - Supply: 200µA
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 32-VFQFN Exposed Pad
  • Supplier Device Package: 32-QFN (5x5)
패키지: 32-VFQFN Exposed Pad
재고19,224
JANTXV1N5285UR-1
Microsemi Corporation

DIODE CURRENT REG 100V

  • Function: Current Regulator
  • Sensing Method: -
  • Accuracy: ±10%
  • Voltage - Input: 100V (Max)
  • Current - Output: 270µA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB (MELF, LL41)
패키지: DO-213AB, MELF
재고6,160
A54SX16-1VQ100
Microsemi Corporation

IC FPGA 81 I/O 100VQFP

  • Number of LABs/CLBs: 1452
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: -
  • Number of I/O: 81
  • Number of Gates: 24000
  • Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 100-TQFP
  • Supplier Device Package: 100-VQFP (14x14)
패키지: 100-TQFP
재고6,992
A3PE3000-2FGG484
Microsemi Corporation

IC FPGA 341 I/O 484FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: 516096
  • Number of I/O: 341
  • Number of Gates: 3000000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 85°C (TJ)
  • Package / Case: 484-BGA
  • Supplier Device Package: 484-FPBGA (23x23)
패키지: 484-BGA
재고5,952
AGLP030V5-VQG128I
Microsemi Corporation

IC FPGA 101 I/O 128VQFN

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 792
  • Total RAM Bits: -
  • Number of I/O: 101
  • Number of Gates: 30000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 128-TQFP
  • Supplier Device Package: 128-VTQFP (14x14)
패키지: 128-TQFP
재고7,120
hot ZL30310GKG2
Microsemi Corporation

IC TIMING-OVER-PACKET 256TEBGA-2

  • PLL: Yes
  • Main Purpose: Ethernet
  • Input: Clock
  • Output: Clock
  • Number of Circuits: 1
  • Ratio - Input:Output: 11:8
  • Differential - Input:Output: No/No
  • Frequency - Max: 125MHz
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 256-BGA
  • Supplier Device Package: 256-BGA (17x17)
패키지: 256-BGA
재고13,476
M1.5KE350CA
Microsemi Corporation

TVS DIODE 300VWM 482VC CASE1

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 300V
  • Voltage - Breakdown (Min): 332V
  • Voltage - Clamping (Max) @ Ipp: 482V
  • Current - Peak Pulse (10/1000µs): 4A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: CASE-1
패키지: DO-201AA, DO-27, Axial
재고6,750
MXPLAD30KP60A
Microsemi Corporation

TVS DIODE 60VWM 96.8VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 60V
  • Voltage - Breakdown (Min): 66.7V
  • Voltage - Clamping (Max) @ Ipp: 96.8V
  • Current - Peak Pulse (10/1000µs): 312A
  • Power - Peak Pulse: 30000W (30kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
패키지: Nonstandard SMD
재고7,056
MXP6KE6.8CAE3
Microsemi Corporation

TVS DIODE 5.8VWM 10.5VC T18

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 5.8V
  • Voltage - Breakdown (Min): 6.45V
  • Voltage - Clamping (Max) @ Ipp: 10.5V
  • Current - Peak Pulse (10/1000µs): 57A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
패키지: T-18, Axial
재고4,896
MXLSMLJ7.0A
Microsemi Corporation

TVS DIODE 7VWM 12VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 7V
  • Voltage - Breakdown (Min): 7.78V
  • Voltage - Clamping (Max) @ Ipp: 12V
  • Current - Peak Pulse (10/1000µs): 250A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
패키지: DO-214AB, SMC
재고2,304
MASMLJ75CAE3
Microsemi Corporation

TVS DIODE 75VWM 121VC DO214AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 75V
  • Voltage - Breakdown (Min): 83.3V
  • Voltage - Clamping (Max) @ Ipp: 121V
  • Current - Peak Pulse (10/1000µs): 24.8A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
패키지: DO-214AB, SMC
재고3,834
MASMLJ150AE3
Microsemi Corporation

TVS DIODE 150VWM 243VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 150V
  • Voltage - Breakdown (Min): 167V
  • Voltage - Clamping (Max) @ Ipp: 243V
  • Current - Peak Pulse (10/1000µs): 12.4A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
패키지: DO-214AB, SMC
재고5,148
MASMCJ75AE3
Microsemi Corporation

TVS DIODE 75VWM 121VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 75V
  • Voltage - Breakdown (Min): 83.3V
  • Voltage - Clamping (Max) @ Ipp: 121V
  • Current - Peak Pulse (10/1000µs): 12.4A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
패키지: DO-214AB, SMC
재고2,934
SMCG6057/TR13
Microsemi Corporation

TVS DIODE 45VWM 80.5VC DO215AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 45V
  • Voltage - Breakdown (Min): 50.4V
  • Voltage - Clamping (Max) @ Ipp: 80.5V
  • Current - Peak Pulse (10/1000µs): 18.6A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB (SMCG)
패키지: DO-215AB, SMC Gull Wing
재고7,038
2N6249
Microsemi Corporation

NPN TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 200 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 10A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 10A, 3V
  • Power - Max: 6 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-204AA, TO-3
  • Supplier Device Package: TO-204AA (TO-3)
패키지: -
Request a Quote