페이지 1491 - Microsemi Corporation 제품 | Heisener Electronics
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Microsemi Corporation 제품

기록 46,511
페이지  1,491/1,662
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APT20GN60BDQ1G
Microsemi Corporation

IGBT 600V 40A 136W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
  • Power - Max: 136W
  • Switching Energy: 230µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 9ns/140ns
  • Test Condition: 400V, 20A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고7,600
APTGL60DH120T3G
Microsemi Corporation

MOD IGBT 1200V 80A SP3

  • IGBT Type: Trench Field Stop
  • Configuration: Asymmetrical Bridge
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 80A
  • Power - Max: 280W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 50A
  • Current - Collector Cutoff (Max): 250µA
  • Input Capacitance (Cies) @ Vce: 2.77nF @ 25V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고3,472
JAN2N6790U
Microsemi Corporation

MOSFET N-CH 18-LCC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 18-ULCC (9.14x7.49)
  • Package / Case: 18-BQFN Exposed Pad
패키지: 18-BQFN Exposed Pad
재고7,024
APTM100DAM90G
Microsemi Corporation

MOSFET N-CH 1000V 78A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 78A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
패키지: SP6
재고7,248
APT12057B2LLG
Microsemi Corporation

MOSFET N-CH 1200V 22A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3
패키지: TO-247-3
재고2,576
hot 2N2605
Microsemi Corporation

TRANS PNP 60V 0.03A TO-46

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 30mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Power - Max: 400mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AB, TO-46-3 Metal Can
  • Supplier Device Package: TO-46-3
패키지: TO-206AB, TO-46-3 Metal Can
재고12,240
1N2838B
Microsemi Corporation

DIODE ZENER 100V 50W TO204AD

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±5%
  • Power - Max: 50W
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 76V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-204AD
  • Supplier Device Package: TO-204AD (TO-3)
패키지: TO-204AD
재고7,408
CDLL5545
Microsemi Corporation

DIODE ZENER 30V 500MW DO213AB

  • Voltage - Zener (Nom) (Vz): 30V
  • Tolerance: ±20%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 10nA @ 24V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
패키지: DO-213AB, MELF
재고3,680
1N4750AUR
Microsemi Corporation

DIODE ZENER 27V 1W DO213AB

  • Voltage - Zener (Nom) (Vz): 27V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 35 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 20.6V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
패키지: DO-213AB, MELF
재고2,544
M2S050T-FGG896ES
Microsemi Corporation

IC SOC ENG SMPL MCU/FPGA 896FBGA

  • Architecture: MCU, FPGA
  • Core Processor: ARM? Cortex?-M3
  • Flash Size: 256KB
  • RAM Size: 64KB
  • Peripherals: DDR, PCIe, SERDES
  • Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
  • Speed: 166MHz
  • Primary Attributes: FPGA - 50K Logic Modules
  • Operating Temperature: 0°C ~ 85°C (TJ)
  • Package / Case: 896-FBGA
  • Supplier Device Package: 896-FBGA (31x31)
패키지: 896-FBGA
재고7,024
A2F200M3F-FG256I
Microsemi Corporation

IC FPGA 200K GATES 256KB 256-BGA

  • Architecture: MCU, FPGA
  • Core Processor: ARM? Cortex?-M3
  • Flash Size: 256KB
  • RAM Size: 64KB
  • Peripherals: DMA, POR, WDT
  • Connectivity: EBI/EMI, Ethernet, I2C, SPI, UART/USART
  • Speed: 80MHz
  • Primary Attributes: ProASIC?3 FPGA, 200K Gates, 4608 D-Flip-Flops
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-FPBGA (17x17)
패키지: 256-LBGA
재고5,424
M2S010-1FGG484
Microsemi Corporation

IC FPGA SOC 10K LUTS 484FBGA

  • Architecture: MCU, FPGA
  • Core Processor: ARM? Cortex?-M3
  • Flash Size: 256KB
  • RAM Size: 64KB
  • Peripherals: DDR, PCIe, SERDES
  • Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
  • Speed: 166MHz
  • Primary Attributes: FPGA - 10K Logic Modules
  • Operating Temperature: 0°C ~ 85°C (TJ)
  • Package / Case: 484-BGA
  • Supplier Device Package: 484-FPBGA (23x23)
패키지: 484-BGA
재고6,240
M2GL150T-1FCVG484I
Microsemi Corporation

IC FPGA 248 I/O 484VFBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 146124
  • Total RAM Bits: 5120000
  • Number of I/O: 248
  • Number of Gates: -
  • Voltage - Supply: 1.14 V ~ 2.625 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 484-BFBGA
  • Supplier Device Package: 484-BGA
패키지: 484-BFBGA
재고2,480
MRT100KP40AE3
Microsemi Corporation

TVS DIODE 40VWM 78.6VC CASE5A

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 40V
  • Voltage - Breakdown (Min): 44.4V
  • Voltage - Clamping (Max) @ Ipp: 78.6V
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: 100000W (100kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: Case 5A (DO-204AR)
패키지: DO-204AR, Axial
재고7,056
MP5KE8.0CAE3
Microsemi Corporation

TVS DIODE 8VWM 13.6VC DO41

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 8V
  • Voltage - Breakdown (Min): 8.89V
  • Voltage - Clamping (Max) @ Ipp: 13.6V
  • Current - Peak Pulse (10/1000µs): 36.7A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고8,118
MXPLAD15KP160AE3
Microsemi Corporation

TVS DIODE 160VWM 259VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 160V
  • Voltage - Breakdown (Min): 178V
  • Voltage - Clamping (Max) @ Ipp: 259V
  • Current - Peak Pulse (10/1000µs): 58A
  • Power - Peak Pulse: 15000W (15kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
패키지: Nonstandard SMD
재고5,508
MXLPLAD18KP58CAE3
Microsemi Corporation

TVS DIODE 93.6VC 193A PLAD

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 58V
  • Voltage - Breakdown (Min): 64.4V
  • Voltage - Clamping (Max) @ Ipp: 93.6V
  • Current - Peak Pulse (10/1000µs): 193A
  • Power - Peak Pulse: 18000W (18kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
패키지: Nonstandard SMD
재고4,086
JANTX1N6467US
Microsemi Corporation

TVS DIODE 40.3VWM 63.5VC EMELF

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 40.3V
  • Voltage - Breakdown (Min): 43.7V
  • Voltage - Clamping (Max) @ Ipp: 63.5V
  • Current - Peak Pulse (10/1000µs): 45A (8/20µs)
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: E-MELF
  • Supplier Device Package: -
패키지: E-MELF
재고4,392
MXP5KE120CA
Microsemi Corporation

TVS DIODE 120VWM 193VC DO41

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 120V
  • Voltage - Breakdown (Min): 133V
  • Voltage - Clamping (Max) @ Ipp: 193V
  • Current - Peak Pulse (10/1000µs): 2A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고3,204
MXP6KE68CAE3
Microsemi Corporation

TVS DIODE 58.1VWM 92VC T18

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 58.1V
  • Voltage - Breakdown (Min): 64.6V
  • Voltage - Clamping (Max) @ Ipp: 92V
  • Current - Peak Pulse (10/1000µs): 6.5A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
패키지: T-18, Axial
재고2,700
MXLSMCJ60AE3
Microsemi Corporation

TVS DIODE 60VWM 96.8VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 60V
  • Voltage - Breakdown (Min): 66.7V
  • Voltage - Clamping (Max) @ Ipp: 96.8V
  • Current - Peak Pulse (10/1000µs): 15.5A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
패키지: DO-214AB, SMC
재고4,482
MXLSMBJ20AE3
Microsemi Corporation

TVS DIODE 20VWM 32.4VC DO214AA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 20V
  • Voltage - Breakdown (Min): 22.2V
  • Voltage - Clamping (Max) @ Ipp: 32.4V
  • Current - Peak Pulse (10/1000µs): 18.5A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
패키지: DO-214AA, SMB
재고4,302
MASMLG100CA
Microsemi Corporation

TVS DIODE 100VWM 162VC DO215AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 100V
  • Voltage - Breakdown (Min): 111V
  • Voltage - Clamping (Max) @ Ipp: 162V
  • Current - Peak Pulse (10/1000µs): 18.6A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: SMLG (DO-215AB)
패키지: DO-215AB, SMC Gull Wing
재고7,020
LX5541LL
Microsemi Corporation

WIRELESS LAN POWER AMPLIFIER

  • Frequency: 2.3GHz ~ 2.5GHz
  • P1dB: -
  • Gain: 27dB
  • Noise Figure: -
  • RF Type: 802.11b/g/n
  • Voltage - Supply: 3.3V
  • Current - Supply: 145mA
  • Test Frequency: 2.5GHz
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,070
BR231D-450C2-28V
Microsemi Corporation

RELAY

  • Relay Type: -
  • Coil Type: -
  • Coil Current: -
  • Coil Voltage: -
  • Contact Form: -
  • Contact Rating (Current): -
  • Switching Voltage: -
  • Turn On Voltage (Max): -
  • Turn Off Voltage (Min): -
  • Operate Time: -
  • Release Time: -
  • Features: -
  • Mounting Type: -
  • Termination Style: -
패키지: -
재고2,178
BR246-320B1-28V-020M
Microsemi Corporation

RELAY

  • Relay Type: -
  • Coil Type: -
  • Coil Current: -
  • Coil Voltage: -
  • Contact Form: -
  • Contact Rating (Current): -
  • Switching Voltage: -
  • Turn On Voltage (Max): -
  • Turn Off Voltage (Min): -
  • Operate Time: -
  • Release Time: -
  • Features: -
  • Mounting Type: -
  • Termination Style: -
패키지: -
재고7,650
BR246-20C2-6V-004L
Microsemi Corporation

RELAY

  • Relay Type: -
  • Coil Type: -
  • Coil Current: -
  • Coil Voltage: -
  • Contact Form: -
  • Contact Rating (Current): -
  • Switching Voltage: -
  • Turn On Voltage (Max): -
  • Turn Off Voltage (Min): -
  • Operate Time: -
  • Release Time: -
  • Features: -
  • Mounting Type: -
  • Termination Style: -
패키지: -
재고5,346
2N1016C
Microsemi Corporation

TRANS NPN 150V 7.5A TO82

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 7.5 A
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 5A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 4V
  • Power - Max: 150 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: TO-82
패키지: -
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