페이지 1535 - Microsemi Corporation 제품 | Heisener Electronics
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Microsemi Corporation 제품

기록 46,511
페이지  1,535/1,662
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APT33N90JCCU2
Microsemi Corporation

MOSFET N-CH 900V 33A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 33A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
패키지: SOT-227-4, miniBLOC
재고6,960
APT18F60B
Microsemi Corporation

MOSFET N-CH 600V 18A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 335W (Tc)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 [B]
  • Package / Case: TO-247-3
패키지: TO-247-3
재고4,352
APTM10DSKM19T3G
Microsemi Corporation

MOSFET 2N-CH 100V 70A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
패키지: SP3
재고5,728
1N4729PE3/TR8
Microsemi Corporation

DIODE ZENER 3.6V 1W DO204AL

  • Voltage - Zener (Nom) (Vz): 3.6V
  • Tolerance: ±10%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 100µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고2,672
SMBG5955A/TR13
Microsemi Corporation

DIODE ZENER 180V 2W SMBG

  • Voltage - Zener (Nom) (Vz): 180V
  • Tolerance: ±10%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 900 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 136.8V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: SMBG (DO-215AA)
패키지: DO-215AA, SMB Gull Wing
재고3,424
1N5338/TR12
Microsemi Corporation

DIODE ZENER 5.1V 5W T18

  • Voltage - Zener (Nom) (Vz): 5.1V
  • Tolerance: ±20%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 1.5 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
패키지: T-18, Axial
재고6,160
JANTX1N5525C-1
Microsemi Corporation

DIODE ZENER 6.2V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 6.2V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 30 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 5V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35 (DO-204AH)
패키지: DO-204AH, DO-35, Axial
재고2,100
JAN1N4473US
Microsemi Corporation

DIODE ZENER 22V 1.5W D-5A

  • Voltage - Zener (Nom) (Vz): 22V
  • Tolerance: ±5%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 14 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 17.6V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: D-5A
패키지: SQ-MELF, A
재고3,344
JANTX1N4619UR-1
Microsemi Corporation

DIODE ZENER 3V 500MW DO213AA

  • Voltage - Zener (Nom) (Vz): 3V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 1600 Ohms
  • Current - Reverse Leakage @ Vr: 400nA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
패키지: DO-213AA
재고7,120
JAN1N6349
Microsemi Corporation

DIODE ZENER 110V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 110V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 500 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 84V
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
패키지: DO-204AH, DO-35, Axial
재고3,776
CDLL4741A
Microsemi Corporation

DIODE ZENER 11V DO213AB

  • Voltage - Zener (Nom) (Vz): 11V
  • Tolerance: ±5%
  • Power - Max: -
  • Impedance (Max) (Zzt): 8 Ohms
  • Current - Reverse Leakage @ Vr: 2µA @ 8.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
패키지: DO-213AB, MELF
재고7,760
1PMT5949/TR7
Microsemi Corporation

DIODE ZENER 100V 3W DO216AA

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±20%
  • Power - Max: 3W
  • Impedance (Max) (Zzt): 250 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 76V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: DO-216AA
패키지: DO-216AA
재고6,768
1N4245
Microsemi Corporation

DIODE GEN PURP 200V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: A, Axial
재고5,744
hot MT9045ANR1
Microsemi Corporation

IC SYNCHRONIZER T1/E1/OC3 48SSOP

  • Function: Digital Phase Locked Loop
  • Interface: -
  • Number of Circuits: 1
  • Voltage - Supply: 3 V ~ 3.6 V
  • Current - Supply: 50mA
  • Power (Watts): -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
패키지: 48-BSSOP (0.295", 7.50mm Width)
재고13,464
A2F060M3E-CSG288I
Microsemi Corporation

IC FPGA 60K GATES 128KB 288-CSP

  • Architecture: MCU, FPGA
  • Core Processor: ARM? Cortex?-M3
  • Flash Size: 128KB
  • RAM Size: 16KB
  • Peripherals: DMA, POR, WDT
  • Connectivity: EBI/EMI, I2C, SPI, UART/USART
  • Speed: 80MHz
  • Primary Attributes: ProASIC?3 FPGA, 60K Gates, 1536D-Flip-Flops
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 288-TFBGA, CSPBGA
  • Supplier Device Package: 288-CSP (11x11)
패키지: 288-TFBGA, CSPBGA
재고7,328
AGL1000V2-FGG256
Microsemi Corporation

IC FPGA 177 I/O 256FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: 24576
  • Total RAM Bits: 147456
  • Number of I/O: 177
  • Number of Gates: 1000000
  • Voltage - Supply: 1.14 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-FPBGA (17x17)
패키지: 256-LBGA
재고6,624
hot ZL30143GGG
Microsemi Corporation

IC SONET/SDH SYNCH 100LFBGA

  • PLL: Yes
  • Main Purpose: Ethernet, SONET/SDH, Stratum
  • Input: Clock
  • Output: Clock
  • Number of Circuits: 1
  • Ratio - Input:Output: 13:14
  • Differential - Input:Output: No/Yes
  • Frequency - Max: 622.08MHz
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 100-FBGA
  • Supplier Device Package: 100-CABGA (9x9)
패키지: 100-FBGA
재고13,560
M15KP240A
Microsemi Corporation

TVS DIODE 240VWM 388VC DO204AR

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 240V
  • Voltage - Breakdown (Min): 267V
  • Voltage - Clamping (Max) @ Ipp: 388V
  • Current - Peak Pulse (10/1000µs): 39A
  • Power - Peak Pulse: 15000W (15kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
패키지: DO-204AR, Axial
재고2,772
MXLSMBJSAC26
Microsemi Corporation

TVS DIODE 26VWM 42.3VC DO214AA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 26V
  • Voltage - Breakdown (Min): 28.9V
  • Voltage - Clamping (Max) @ Ipp: 42.3V
  • Current - Peak Pulse (10/1000µs): 11.1A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 30pF @ 1MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
패키지: DO-214AA, SMB
재고6,444
MXLPLAD30KP280AE3
Microsemi Corporation

TVS DIODE 280VWM 451VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 280V
  • Voltage - Breakdown (Min): 311V
  • Voltage - Clamping (Max) @ Ipp: 451V
  • Current - Peak Pulse (10/1000µs): 66A
  • Power - Peak Pulse: 30000W (30kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
패키지: Nonstandard SMD
재고4,572
MAPLAD18KP12CA
Microsemi Corporation

TVS DIODE 19.9VC 905A PLAD

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 12V
  • Voltage - Breakdown (Min): 13.3V
  • Voltage - Clamping (Max) @ Ipp: 19.9V
  • Current - Peak Pulse (10/1000µs): 905A
  • Power - Peak Pulse: 18000W (18kW)
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
패키지: Nonstandard SMD
재고4,338
ICT-22
Microsemi Corporation

TVS DIODE 22VWM 32VC DO13

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 22V
  • Voltage - Breakdown (Min): 25.9V
  • Voltage - Clamping (Max) @ Ipp: 32V
  • Current - Peak Pulse (10/1000µs): 40A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-13
  • Supplier Device Package: DO-13
패키지: DO-13
재고4,770
MXLSMCJ36CAE3
Microsemi Corporation

TVS DIODE 36VWM 58.1VC DO214AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 36V
  • Voltage - Breakdown (Min): 40V
  • Voltage - Clamping (Max) @ Ipp: 58.1V
  • Current - Peak Pulse (10/1000µs): 25.8A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
패키지: DO-214AB, SMC
재고3,942
MXLSMCJ26A
Microsemi Corporation

TVS DIODE 26VWM 42.1VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 26V
  • Voltage - Breakdown (Min): 28.9V
  • Voltage - Clamping (Max) @ Ipp: 42.1V
  • Current - Peak Pulse (10/1000µs): 35.6A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMCJ)
패키지: DO-214AB, SMC
재고2,934
MASMLG70CA
Microsemi Corporation

TVS DIODE 70VWM 113VC DO215AB

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 70V
  • Voltage - Breakdown (Min): 77.8V
  • Voltage - Clamping (Max) @ Ipp: 113V
  • Current - Peak Pulse (10/1000µs): 26.6A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: SMLG (DO-215AB)
패키지: DO-215AB, SMC Gull Wing
재고7,452
MASMBJ8.5CA
Microsemi Corporation

TVS DIODE 8.5VWM 14.4VC DO214AA

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 8.5V
  • Voltage - Breakdown (Min): 9.44V
  • Voltage - Clamping (Max) @ Ipp: 14.4V
  • Current - Peak Pulse (10/1000µs): 41.7A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
패키지: DO-214AA, SMB
재고4,680
SMAJ11CE3/TR13
Microsemi Corporation

TVS DIODE 11VWM 20.1VC SMAJ

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 11V
  • Voltage - Breakdown (Min): 12.2V
  • Voltage - Clamping (Max) @ Ipp: 20.1V
  • Current - Peak Pulse (10/1000µs): 24.9A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
패키지: DO-214AC, SMA
재고7,614
MS2321A
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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