페이지 1591 - Microsemi Corporation 제품 | Heisener Electronics
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Microsemi Corporation 제품

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페이지  1,591/1,662
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APT36GA60B
Microsemi Corporation

IGBT 600V 65A 290W TO-247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 109A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 290W
  • Switching Energy: 307µJ (on), 254µJ (off)
  • Input Type: Standard
  • Gate Charge: 102nC
  • Td (on/off) @ 25°C: 16ns/122ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고5,792
JANTXV2N3498
Microsemi Corporation

TRANS NPN 100V 0.5A TO-39

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39 (TO-205AD)
패키지: TO-205AD, TO-39-3 Metal Can
재고7,376
MRF555
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB ~ 13dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
패키지: Power Macro
재고7,664
JANS1N6322US
Microsemi Corporation

DIODE ZENER 8.2V 500MW B-SQ MELF

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 5 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 6V
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
패키지: SQ-MELF, B
재고4,656
1N5518B (DO35)
Microsemi Corporation

DIODE ZENER 3.3V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 3.3V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 26 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
패키지: DO-204AH, DO-35, Axial
재고3,616
1N5380B/TR8
Microsemi Corporation

DIODE ZENER 120V 5W T18

  • Voltage - Zener (Nom) (Vz): 120V
  • Tolerance: ±5%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 170 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 86.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
패키지: T-18, Axial
재고2,208
SMBG5928BE3/TR13
Microsemi Corporation

DIODE ZENER 13V 2W SMBG

  • Voltage - Zener (Nom) (Vz): 13V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 7 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 9.9V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: SMBG (DO-215AA)
패키지: DO-215AA, SMB Gull Wing
재고2,960
JANTX1N4101CUR-1
Microsemi Corporation

DIODE ZENER 8.2V 500MW DO213AA

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 6.3V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA
패키지: DO-213AA (Glass)
재고2,256
1N5732B
Microsemi Corporation

DIODE ZENER 6.8V 500MW DO35

  • Voltage - Zener (Nom) (Vz): 6.8V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 3µA @ 4V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
패키지: DO-204AH, DO-35, Axial
재고7,248
1N5923CPE3/TR12
Microsemi Corporation

DIODE ZENER 8.2V 1.5W DO204AL

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±2%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 3.5 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 6.5V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고7,120
2EZ11D10E3/TR12
Microsemi Corporation

DIODE ZENER 11V 2W DO204AL

  • Voltage - Zener (Nom) (Vz): 11V
  • Tolerance: ±10%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 4 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 8.4V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고2,720
1N4755E3/TR13
Microsemi Corporation

DIODE ZENER 43V 1W DO204AL

  • Voltage - Zener (Nom) (Vz): 43V
  • Tolerance: ±10%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 70 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 32.7V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고2,496
JANTX1N3768
Microsemi Corporation

DIODE GEN PURP 1KV 35A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-203AB, DO-5, Stud
재고7,424
JAN1N3671A
Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-203AA, DO-4, Stud
재고6,096
JANTX1N3911
Microsemi Corporation

DIODE GEN PURP 200V 50A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 50A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 15µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-203AB, DO-5, Stud
재고5,264
LSM160G/TR13
Microsemi Corporation

DIODE SCHOTTKY 1A 60V SMBG

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고6,736
MT3370BN1
Microsemi Corporation

IC RECEIVER DTMF 50DB 20SSOP

  • Function: DTMF Receiver
  • Interface: Parallel
  • Number of Circuits: 1
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Current - Supply: 3mA
  • Power (Watts): -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 20-SSOP
패키지: 20-SSOP (0.209", 5.30mm Width)
재고6,304
A3P600-FG144I
Microsemi Corporation

IC FPGA 97 I/O 144FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: 110592
  • Number of I/O: 97
  • Number of Gates: 600000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 144-LBGA
  • Supplier Device Package: 144-FPBGA (13x13)
패키지: 144-LBGA
재고3,200
M1A3PE3000-FGG896I
Microsemi Corporation

IC FPGA 620 I/O 896FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: 516096
  • Number of I/O: 620
  • Number of Gates: 3000000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 896-BGA
  • Supplier Device Package: 896-FBGA (31x31)
패키지: 896-BGA
재고5,616
A3P250-2FGG256
Microsemi Corporation

IC FPGA 157 I/O 256FBGA

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: 36864
  • Number of I/O: 157
  • Number of Gates: 250000
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 85°C (TJ)
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-FPBGA (17x17)
패키지: 256-LBGA
재고5,712
UPTB28/TR7
Microsemi Corporation

TVS DIODE 28VWM POWERMITE

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 28V
  • Voltage - Breakdown (Min): 31V
  • Voltage - Clamping (Max) @ Ipp: 47.8V
  • Current - Peak Pulse (10/1000µs): 3.13A
  • Power - Peak Pulse: 1000W (1kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-216AA
  • Supplier Device Package: Powermite 1 (DO216-AA)
패키지: DO-216AA
재고2,592
MXRT100KP51AE3
Microsemi Corporation

TVS DIODE 51VWM 101VC CASE5A

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 51V
  • Voltage - Breakdown (Min): 56.7V
  • Voltage - Clamping (Max) @ Ipp: 101V
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: 100000W (100kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: Case 5A (DO-204AR)
패키지: DO-204AR, Axial
재고4,608
MX15KP78A
Microsemi Corporation

TVS DIODE 78VWM 126VC CASE5A

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 78V
  • Voltage - Breakdown (Min): 86.7V
  • Voltage - Clamping (Max) @ Ipp: 126V
  • Current - Peak Pulse (10/1000µs): 119A
  • Power - Peak Pulse: 15000W (15kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: Case 5A (DO-204AR)
패키지: DO-204AR, Axial
재고6,714
MXLCE6.5AE3
Microsemi Corporation

TVS DIODE 6.5VWM 11.2VC CASE1

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 6.5V
  • Voltage - Breakdown (Min): 7.22V
  • Voltage - Clamping (Max) @ Ipp: 11.2V
  • Current - Peak Pulse (10/1000µs): 100A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 100pF @ 1MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: CASE-1
패키지: DO-201AA, DO-27, Axial
재고6,768
MXLP6KE180CAE3
Microsemi Corporation

TVS DIODE 154VWM 246VC T18

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 154V
  • Voltage - Breakdown (Min): 171V
  • Voltage - Clamping (Max) @ Ipp: 246V
  • Current - Peak Pulse (10/1000µs): 2.4A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: T-18
패키지: T-18, Axial
재고5,814
MPLAD6.5KP26AE3
Microsemi Corporation

TVS DIODE 26VWM 42.1VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 26V
  • Voltage - Breakdown (Min): 28.9V
  • Voltage - Clamping (Max) @ Ipp: 42.1V
  • Current - Peak Pulse (10/1000µs): 154A
  • Power - Peak Pulse: 6500W (6.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
패키지: Nonstandard SMD
재고6,696
MSMBG100CA
Microsemi Corporation

TVS DIODE 100VWM 162VC DO215AA

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 100V
  • Voltage - Breakdown (Min): 111V
  • Voltage - Clamping (Max) @ Ipp: 162V
  • Current - Peak Pulse (10/1000µs): 3.7A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: SMBG (DO-215AA)
패키지: DO-215AA, SMB Gull Wing
재고3,744
MSMBG51AE3
Microsemi Corporation

TVS DIODE 51VWM 82.4VC DO215AA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 51V
  • Voltage - Breakdown (Min): 56.7V
  • Voltage - Clamping (Max) @ Ipp: 82.4V
  • Current - Peak Pulse (10/1000µs): 7.3A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: SMBG (DO-215AA)
패키지: DO-215AA, SMB Gull Wing
재고6,264