Microsemi Corporation 제품

MX2N4392

Microsemi Corporation

N CHANNEL JFET

• FET Type: -
• Voltage - Breakdown (V(BR)GSS): -
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): -
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Resistance - RDS(On): -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

APTGT50H60T2G

Microsemi Corporation

MOD IGBT 600V 80A SP2

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Power - Max: 176W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector Cutoff (Max): 250µA
• Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SP2
• Supplier Device Package: SP2

패키지: SP2

JAN2N3251A

Microsemi Corporation

TRANS PNP 60V 0.2A TO-39

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 360mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)

패키지: TO-205AD, TO-39-3 Metal Can

MRF586

Microsemi Corporation

TRANS RF BIPO 1W 200MA TO39

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 17V
• Frequency - Transition: 3GHz
• Noise Figure (dB Typ @ f): -
• Gain: 13.5dB
• Power - Max: 1W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39

패키지: TO-205AD, TO-39-3 Metal Can

JANTX2N2857

Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 15V
• Frequency - Transition: 500MHz
• Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
• Gain: 12.5dB ~ 21dB @ 450MHz
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-72-3 Metal Can
• Supplier Device Package: TO-72

패키지: TO-72-3 Metal Can

3EZ4.7D2E3/TR8

Microsemi Corporation

DIODE ZENER 4.7V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 4.7V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

3EZ150D2/TR12

Microsemi Corporation

DIODE ZENER 150V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 150V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 550 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 114V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

1PMT5923E3/TR13

Microsemi Corporation

DIODE ZENER 8.2V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 3.5 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 6.5V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

패키지: DO-216AA

CDLL4731A

Microsemi Corporation

DIODE ZENER 4.3V DO213AB

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: -
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

패키지: DO-213AB, MELF

SMBG5354CE3/TR13

Microsemi Corporation

DIODE ZENER 17V 5W SMBG

• Voltage - Zener (Nom) (Vz): 17V
• Tolerance: ±2%
• Power - Max: 5W
• Impedance (Max) (Zzt): 2.5 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 12.2V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: SMBG (DO-215AA)

패키지: DO-215AA, SMB Gull Wing

1PMT4121C/TR13

Microsemi Corporation

DIODE ZENER 33V 1W DO216

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 25.08V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

패키지: DO-216AA

HS183100

Microsemi Corporation

DIODE MODULE 100V 180A HALF-PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 180A
• Voltage - Forward (Vf) (Max) @ If: 910mV @ 180A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 100V
• Capacitance @ Vr, F: 4800pF @ 5V, 1MHz
• Mounting Type: Chassis Mount
• Package / Case: HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

패키지: HALF-PAK

S3480

Microsemi Corporation

DIODE GEN PURP 800V 45A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 45A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 90A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 200°C

패키지: DO-203AB, DO-5, Stud

MSD160-08

Microsemi Corporation

DIODE BRIDGE 3PH 800V 160A SM3

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 160A
• Voltage - Forward (Vf) (Max) @ If: 1.65V @ 300A
• Current - Reverse Leakage @ Vr: 500µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: M3
• Supplier Device Package: M3

패키지: M3

NX4108-33CZ1TR

Microsemi Corporation

IC REG BUCK 3.3V 1A SYNC SOT23

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Fixed
• Number of Outputs: 1
• Voltage - Input (Min): 4.5V
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Current - Output: 1A
• Frequency - Switching: 1MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

패키지: SC-74A, SOT-753

JANTX1N5288UR-1

Microsemi Corporation

DIODE CURRENT REG 100V

• Function: Current Regulator
• Sensing Method: -
• Accuracy: ±10%
• Voltage - Input: 100V (Max)
• Current - Output: 390µA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

패키지: DO-213AB, MELF

A54SX32-2BG313I

Microsemi Corporation

IC FPGA 249 I/O 313BGA

• Number of LABs/CLBs: 2880
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 249
• Number of Gates: 48000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 313-BBGA
• Supplier Device Package: 313-PBGA (35x35)

패키지: 313-BBGA

A54SX72A-1PQG208

Microsemi Corporation

IC FPGA 171 I/O 208QFP

• Number of LABs/CLBs: 6036
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 171
• Number of Gates: 108000
• Voltage - Supply: 2.25 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 208-BFQFP
• Supplier Device Package: 208-PQFP (28x28)

패키지: 208-BFQFP

A3P1000-2FG256M

Microsemi Corporation

IC FPGA 177 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 177
• Number of Gates: 1000000
• Voltage - Supply: 1.14 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -55°C ~ 125°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

패키지: 256-LBGA

A42MX16-2PQG100

Microsemi Corporation

IC FPGA 83 I/O 100QFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: -
• Number of I/O: 83
• Number of Gates: 24000
• Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 70°C (TA)
• Package / Case: 100-BQFP
• Supplier Device Package: 100-PQFP (14x20)

패키지: 100-BQFP

M1A3P1000L-1FG144I

Microsemi Corporation

IC FPGA 97 I/O 144FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 97
• Number of Gates: 1000000
• Voltage - Supply: 1.14V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 144-LBGA
• Supplier Device Package: 144-FPBGA (13x13)

패키지: 144-LBGA

M2GL060TS-1FG676I

Microsemi Corporation

IC FPGA 387 I/O 676FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 56520
• Total RAM Bits: 1869824
• Number of I/O: 387
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 676-BGA
• Supplier Device Package: 676-FBGA (27x27)

패키지: 676-BGA

A3P125-1TQ144

Microsemi Corporation

IC FPGA 100 I/O 144TQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 100
• Number of Gates: 125000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 144-LQFP
• Supplier Device Package: 144-TQFP (20x20)

패키지: 144-LQFP

JAN1N5635A

Microsemi Corporation

TVS DIODE 10.2VWM 16.7VC DO13

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10.2V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 90A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13 (DO-202AA)

패키지: DO-13

MAP4KE12CA

Microsemi Corporation

TVS DIODE 10.2VWM 16.7VC DO41

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10.2V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 24A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

SMDA03C-4E3/TR7

Microsemi Corporation

TVS DIODE 3.3VWM 9VC 8SOIC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 4
• Voltage - Reverse Standoff (Typ): 3.3V
• Voltage - Breakdown (Min): 4V
• Voltage - Clamping (Max) @ Ipp: 9V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 300pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

JANTXV1N5665A

Microsemi Corporation

TVS DIODE 171VWM 274VC DO-13

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 171V
• Voltage - Breakdown (Min): 190V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 5.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13 (DO-202AA)

패키지: DO-13

BR246D-320C1-28V-019M

Microsemi Corporation

RELAY

• Relay Type: -
• Coil Type: -
• Coil Current: -
• Coil Voltage: -
• Contact Form: -
• Contact Rating (Current): -
• Switching Voltage: -
• Turn On Voltage (Max): -
• Turn Off Voltage (Min): -
• Operate Time: -
• Release Time: -
• Features: -
• Mounting Type: -
• Termination Style: -

패키지: -