페이지 63 - Microsemi Corporation 제품 | Heisener Electronics
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Microsemi Corporation 제품

기록 46,511
페이지  63/1,662
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APT60GT60BRG
Microsemi Corporation

IGBT 600V 100A 500W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
  • Power - Max: 500W
  • Switching Energy: 3.4mJ
  • Input Type: Standard
  • Gate Charge: 275nC
  • Td (on/off) @ 25°C: 26ns/395ns
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 [B]
패키지: TO-247-3
재고33,966
APTGT300SK60D3G
Microsemi Corporation

IGBT BUCK CHOPPER 600V 400A D3

  • IGBT Type: Trench Field Stop
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 400A
  • Power - Max: 940W
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 300A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: 18.5nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
패키지: D-3 Module
재고6,320
APT97N65LC6
Microsemi Corporation

MOSFET N-CH 650V 97A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7650pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 862W (Tc)
  • Rds On (Max) @ Id, Vgs: 41 mOhm @ 48.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
패키지: TO-264-3, TO-264AA
재고2,432
JANTXV2N2060L
Microsemi Corporation

TRANS 2NPN 60V 0.5A TO78

  • Transistor Type: 2 NPN (Dual)
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Power - Max: 2.12W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-78-6 Metal Can
  • Supplier Device Package: TO-78-6
패키지: TO-78-6 Metal Can
재고2,976
JANTXV1N980DUR-1
Microsemi Corporation

DIODE ZENER 62V 500MW DO213AA

  • Voltage - Zener (Nom) (Vz): 62V
  • Tolerance: ±1%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 185 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 47V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
패키지: DO-213AA
재고3,696
JAN1N4112CUR-1
Microsemi Corporation

DIODE ZENER 18V DO213AA

  • Voltage - Zener (Nom) (Vz): 18V
  • Tolerance: ±2%
  • Power - Max: -
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 13.7V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
패키지: DO-213AA
재고5,040
CDLL4758
Microsemi Corporation

DIODE ZENER 56V DO213AB

  • Voltage - Zener (Nom) (Vz): 56V
  • Tolerance: ±10%
  • Power - Max: -
  • Impedance (Max) (Zzt): 110 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 42.6V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
패키지: DO-213AB, MELF
재고5,600
SMBG5345A/TR13
Microsemi Corporation

DIODE ZENER 8.7V 5W SMBG

  • Voltage - Zener (Nom) (Vz): 8.7V
  • Tolerance: ±10%
  • Power - Max: 5W
  • Impedance (Max) (Zzt): 2 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 6.25V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: SMBG (DO-215AA)
패키지: DO-215AA, SMB Gull Wing
재고2,464
SMBJ4764A/TR13
Microsemi Corporation

DIODE ZENER 100V 2W SMBJ

  • Voltage - Zener (Nom) (Vz): 100V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 350 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 76V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
패키지: DO-214AA, SMB
재고5,744
SK33BE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 30V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: DO-214AA, SMB
재고7,328
JANTXV1N5807
Microsemi Corporation

DIODE GEN PURP 50V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 65pF @ 10V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: B, Axial
재고5,536
1N6625US
Microsemi Corporation

DIODE GEN PURP 1.1KV 1A A-MELF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 1µA @ 1100V
  • Capacitance @ Vr, F: 10pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, A
  • Supplier Device Package: A-MELF
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: SQ-MELF, A
재고5,456
M2S100S-1FCG1152I
Microsemi Corporation

IC FPGA SOC 100K LUTS 1152FCBGA

  • Architecture: MCU, FPGA
  • Core Processor: ARM? Cortex?-M3
  • Flash Size: 512KB
  • RAM Size: 64KB
  • Peripherals: DDR, PCIe, SERDES
  • Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
  • Speed: 166MHz
  • Primary Attributes: FPGA - 100K Logic Modules
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Package / Case: 1152-BBGA, FCBGA
  • Supplier Device Package: 1152-FCBGA (35x35)
패키지: 1152-BBGA, FCBGA
재고4,896
A54SX32-2BG329I
Microsemi Corporation

IC FPGA 249 I/O 329BGA

  • Number of LABs/CLBs: 2880
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: -
  • Number of I/O: 249
  • Number of Gates: 48000
  • Voltage - Supply: 3 V ~ 3.6 V, 4.75 V ~ 5.25 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 329-BBGA
  • Supplier Device Package: 329-PBGA (31x31)
패키지: 329-BBGA
재고2,032
A54SX32A-FPQ208
Microsemi Corporation

IC FPGA 174 I/O 208QFP

  • Number of LABs/CLBs: 2880
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: -
  • Number of I/O: 174
  • Number of Gates: 48000
  • Voltage - Supply: 2.25 V ~ 5.25 V
  • Mounting Type: Surface Mount
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Package / Case: 208-BFQFP
  • Supplier Device Package: 208-PQFP (28x28)
패키지: 208-BFQFP
재고6,032
A40MX02-VQG80A
Microsemi Corporation

IC FPGA 57 I/O 80VQFP

  • Number of LABs/CLBs: -
  • Number of Logic Elements/Cells: -
  • Total RAM Bits: -
  • Number of I/O: 57
  • Number of Gates: 3000
  • Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Package / Case: 80-TQFP
  • Supplier Device Package: 80-VQFP (14x14)
패키지: 80-TQFP
재고5,792
ZL30365GDG2
Microsemi Corporation

IC NETWORK SYNCH ETH CLK 144LBGA

  • PLL: Yes
  • Main Purpose: Ethernet, Fibre Channel, SONET/SDH
  • Input: Clock
  • Output: LVCMOS, LVPECL
  • Number of Circuits: 1
  • Ratio - Input:Output: 8:16
  • Differential - Input:Output: Yes/Yes
  • Frequency - Max: 750MHz
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 144-BGA
  • Supplier Device Package: 144-LBGA (13x13)
패키지: 144-BGA
재고4,944
1N6050A
Microsemi Corporation

TVS DIODE 25VWM 41.4VC DO13

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 25V
  • Voltage - Breakdown (Min): 28.5V
  • Voltage - Clamping (Max) @ Ipp: 41.4V
  • Current - Peak Pulse (10/1000µs): 36A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-13
  • Supplier Device Package: DO-13
패키지: DO-13
재고6,624
M15KP200A
Microsemi Corporation

TVS DIODE 200VWM 322VC DO204AR

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 200V
  • Voltage - Breakdown (Min): 222V
  • Voltage - Clamping (Max) @ Ipp: 322V
  • Current - Peak Pulse (10/1000µs): 47A
  • Power - Peak Pulse: 15000W (15kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AR, Axial
  • Supplier Device Package: DO-204AR
패키지: DO-204AR, Axial
재고2,772
JANTXV1N6103A
Microsemi Corporation

TVS DIODE 5.7VWM BPKG AXIAL

  • Type: Zener
  • Unidirectional Channels: -
  • Bidirectional Channels: 1
  • Voltage - Reverse Standoff (Typ): 5.7V
  • Voltage - Breakdown (Min): 7.13V
  • Voltage - Clamping (Max) @ Ipp: 11.2V
  • Current - Peak Pulse (10/1000µs): 44.6A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: Axial
패키지: B, Axial
재고8,298
MXLSMCGLCE28AE3
Microsemi Corporation

TVS DIODE 28VWM 45.5VC DO215AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 28V
  • Voltage - Breakdown (Min): 31.1V
  • Voltage - Clamping (Max) @ Ipp: 45.5V
  • Current - Peak Pulse (10/1000µs): 33A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 100pF @ 1MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: SMCG (DO-215AB)
패키지: DO-215AB, SMC Gull Wing
재고2,844
MXPLAD6.5KP28AE3
Microsemi Corporation

TVS DIODE 28VWM 45.5VC PLAD

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 28V
  • Voltage - Breakdown (Min): 31.1V
  • Voltage - Clamping (Max) @ Ipp: 45.5V
  • Current - Peak Pulse (10/1000µs): 143A
  • Power - Peak Pulse: 6500W (6.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Nonstandard SMD
  • Supplier Device Package: PLAD
패키지: Nonstandard SMD
재고6,048
MXP5KE9.0AE3
Microsemi Corporation

TVS DIODE 9VWM 15.4VC DO41

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 9V
  • Voltage - Breakdown (Min): 10V
  • Voltage - Clamping (Max) @ Ipp: 15.4V
  • Current - Peak Pulse (10/1000µs): 32.5A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고2,934
MXLSMLJ12AE3
Microsemi Corporation

TVS DIODE 12VWM 19.9VC DO214AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 12V
  • Voltage - Breakdown (Min): 13.3V
  • Voltage - Clamping (Max) @ Ipp: 19.9V
  • Current - Peak Pulse (10/1000µs): 150.6A
  • Power - Peak Pulse: 3000W (3kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
패키지: DO-214AB, SMC
재고2,628
MXLSMCG64AE3
Microsemi Corporation

TVS DIODE 64VWM 103VC DO215AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 64V
  • Voltage - Breakdown (Min): 71.1V
  • Voltage - Clamping (Max) @ Ipp: 103V
  • Current - Peak Pulse (10/1000µs): 14.6A
  • Power - Peak Pulse: 1500W (1.5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: SMCG (DO-215AB)
패키지: DO-215AB, SMC Gull Wing
재고7,704
MXLSMBJ33AE3
Microsemi Corporation

TVS DIODE 33VWM 53.3VC DO214AA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 33V
  • Voltage - Breakdown (Min): 36.7V
  • Voltage - Clamping (Max) @ Ipp: 53.3V
  • Current - Peak Pulse (10/1000µs): 11.3A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMBJ (DO-214AA)
패키지: DO-214AA, SMB
재고2,070
5KP200AE3/TR13
Microsemi Corporation

TVS DIODE 200VWM 329VC P600

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 200V
  • Voltage - Breakdown (Min): 222V
  • Voltage - Clamping (Max) @ Ipp: 329V
  • Current - Peak Pulse (10/1000µs): 15.5A
  • Power - Peak Pulse: 5000W (5kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
패키지: P600, Axial
재고8,190
SMAJ100E3/TR13
Microsemi Corporation

TVS DIODE 100VWM 179VC SMAJ

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 100V
  • Voltage - Breakdown (Min): 111V
  • Voltage - Clamping (Max) @ Ipp: 179V
  • Current - Peak Pulse (10/1000µs): 2.8A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
패키지: DO-214AC, SMA
재고6,732