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Nexperia USA Inc. 제품

기록 11,821
페이지  5/423
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PMCM650VNE/S500Z
Nexperia USA Inc.

MOSFET SS

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
재고3,184
PH4030AL,115
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2090pF @ 12V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: SC-100, SOT-669
재고5,280
PBSS302NDH
Nexperia USA Inc.

TRANS NPN 40V 4A 6TSOP

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 600mA, 6A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V
  • Power - Max: 360mW
  • Frequency - Transition: 150MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
패키지: SC-74, SOT-457
재고3,296
PDTC143ZT,235
Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7k
  • Resistor - Emitter Base (R2) (Ohms): 47k
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 1µA
  • Frequency - Transition: 230MHz
  • Power - Max: 250mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
패키지: TO-236-3, SC-59, SOT-23-3
재고325,644
PDZ2.7B,135
Nexperia USA Inc.

DIODE ZENER 2.7V 400MW SOD323

  • Voltage - Zener (Nom) (Vz): 2.7V
  • Tolerance: ±2%
  • Power - Max: 400mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 20µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
  • Operating Temperature: -65°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
패키지: SC-76, SOD-323
재고3,760
BZV55-B8V2,115
Nexperia USA Inc.

DIODE ZENER 8.2V 500MW SOD80C

  • Voltage - Zener (Nom) (Vz): 8.2V
  • Tolerance: ±2%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 700nA @ 5V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80C
패키지: DO-213AC, MINI-MELF, SOD-80
재고6,352
BZV55-C16,115
Nexperia USA Inc.

DIODE ZENER 16V 500MW SOD80C

  • Voltage - Zener (Nom) (Vz): 16V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 11.2V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80C
패키지: DO-213AC, MINI-MELF, SOD-80
재고3,456
BZV55-C36,115
Nexperia USA Inc.

DIODE ZENER 36V 500MW SOD80C

  • Voltage - Zener (Nom) (Vz): 36V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 90 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 25.2V
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AC, MINI-MELF, SOD-80
  • Supplier Device Package: SOD-80C
패키지: DO-213AC, MINI-MELF, SOD-80
재고65,556
BAT54AWF
Nexperia USA Inc.

BAT54AW/SOT323/SC-70

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
재고2,512
BAS16QAZ
Nexperia USA Inc.

DIODE GP 100V 290MA DFN1010D-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 290mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 500nA @ 80V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-XDFN
  • Supplier Device Package: DFN1010D-3
  • Operating Temperature - Junction: 150°C (Max)
패키지: 3-XDFN
재고2,704
74HCT280D,652
Nexperia USA Inc.

IC 9-BIT GEN/CHKER 14SO

  • Logic Type: Parity Generator/Checker
  • Number of Circuits: 9-Bit
  • Current - Output High, Low: -
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
패키지: 14-SOIC (0.154", 3.90mm Width)
재고28,578
74ALVC373D,118
Nexperia USA Inc.

IC OCT D TRANSP LTCH 3ST 20SOIC

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 2.2ns
  • Current - Output High, Low: 24mA, 24mA
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
패키지: 20-SOIC (0.295", 7.50mm Width)
재고7,584
74HCT373D,653
Nexperia USA Inc.

IC LATCH TRANSP OCT D 3ST 20SOIC

  • Logic Type: D-Type Transparent Latch
  • Circuit: 8:8
  • Output Type: Tri-State
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Independent Circuits: 1
  • Delay Time - Propagation: 14ns
  • Current - Output High, Low: 6mA, 6mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
패키지: 20-SOIC (0.295", 7.50mm Width)
재고28,254
hot 74AHC1G00GW,125
Nexperia USA Inc.

IC GATE NAND 1CH 2-INP 5-TSSOP

  • Logic Type: NAND Gate
  • Number of Circuits: 1
  • Number of Inputs: 2
  • Features: -
  • Voltage - Supply: 2 V ~ 5.5 V
  • Current - Quiescent (Max): 1µA
  • Current - Output High, Low: 8mA, 8mA
  • Logic Level - Low: 0.5 V ~ 1.65 V
  • Logic Level - High: 1.5 V ~ 3.85 V
  • Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-TSSOP
  • Package / Case: 5-TSSOP, SC-70-5, SOT-353
패키지: 5-TSSOP, SC-70-5, SOT-353
재고94,800
74AUP1G79GF,132
Nexperia USA Inc.

IC D-TYPE POS TRG SNGL 6XSON

  • Function: Standard
  • Type: D-Type
  • Output Type: Non-Inverted
  • Number of Elements: 1
  • Number of Bits per Element: 1
  • Clock Frequency: 309MHz
  • Max Propagation Delay @ V, Max CL: 5.8ns @ 3.3V, 30pF
  • Trigger Type: Positive Edge
  • Current - Output High, Low: 4mA, 4mA
  • Voltage - Supply: 0.8 V ~ 3.6 V
  • Current - Quiescent (Iq): 500nA
  • Input Capacitance: 0.8pF
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
패키지: 6-XFDFN
재고6,384
BZA968A,115
Nexperia USA Inc.

TVS DIODE 6.8VWM SOT665

  • Type: Zener
  • Unidirectional Channels: 4
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 6.8V
  • Voltage - Breakdown (Min): -
  • Voltage - Clamping (Max) @ Ipp: -
  • Current - Peak Pulse (10/1000µs): -
  • Power - Peak Pulse: 14W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: 90pF @ 1MHz
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-665
  • Supplier Device Package: SOT-665
패키지: SOT-665
재고35,070
NCR320UX
Nexperia USA Inc.

250 MA LED DRIVER IN SOT457

  • Type: Linear
  • Topology: Shift Register
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): -
  • Voltage - Supply (Max): 16V
  • Voltage - Output: 16V
  • Current - Output / Channel: 250mA
  • Frequency: -
  • Dimming: PWM
  • Applications: Automotive
  • Operating Temperature: -55°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: 6-TSOP
패키지: SC-74, SOT-457
재고5,280
BZX84W-C75X
Nexperia USA Inc.

DIODE ZENER 75V 275MW SOT323

  • Voltage - Zener (Nom) (Vz): 75 V
  • Tolerance: ±5%
  • Power - Max: 275 mW
  • Impedance (Max) (Zzt): 255 Ohms
  • Current - Reverse Leakage @ Vr: 50 nA @ 52.2 V
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
패키지: -
재고8,400
MM3Z16VT1GX
Nexperia USA Inc.

VOLTAGE REGULATOR DIODES

  • Voltage - Zener (Nom) (Vz): 16 V
  • Tolerance: ±5%
  • Power - Max: 300 mW
  • Impedance (Max) (Zzt): 20 Ohms
  • Current - Reverse Leakage @ Vr: 50 nA @ 12 V
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
패키지: -
재고3,624
MJD148-QJ
Nexperia USA Inc.

TRANS NPN 45V 4A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
  • Power - Max: 1.6 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
패키지: -
재고6,393
PUMD6H-QF
Nexperia USA Inc.

PUMD6H-QF

  • Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Resistor - Base (R1) (Ohms): 4.7kOhms
  • Resistor - Emitter Base (R2) (Ohms): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA
  • Frequency - Transition: 230MHz, 180MHz
  • Power - Max: 240mW
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: 6-TSSOP
패키지: -
Request a Quote
PMEG100T200ELPEZ
Nexperia USA Inc.

DIODE SCHOTTKY 100V 20A CFP15B

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 1600pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: CFP15B
  • Operating Temperature - Junction: 175°C
패키지: -
재고5,064
BAT46GW-QJ
Nexperia USA Inc.

BAT46GW-Q/SOD123/SOD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 250 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5.9 ns
  • Current - Reverse Leakage @ Vr: 9 µA @ 100 V
  • Capacitance @ Vr, F: 39pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
PSMN3R2-40YLDX
Nexperia USA Inc.

MOSFET N-CH 40V 120A LFPAK56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.05V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4103 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: Schottky Diode (Body)
  • Power Dissipation (Max): 115W (Ta)
  • Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
패키지: -
재고8,940
BZX585-C13F
Nexperia USA Inc.

BZX585-C13/SOD523/SC-79

  • Voltage - Zener (Nom) (Vz): 13 V
  • Tolerance: ±5%
  • Power - Max: 300 mW
  • Impedance (Max) (Zzt): 10 Ohms
  • Current - Reverse Leakage @ Vr: 100 µA @ 8 V
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
패키지: -
Request a Quote
PSMP160-100YSX
Nexperia USA Inc.

MOSFET P-CH 100V LFPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
패키지: -
Request a Quote
BUK6D22-30EX
Nexperia USA Inc.

MOSFET N-CH 30V 7.2A/22A 6DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta), 19W (Tc)
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN2020MD-6
  • Package / Case: 6-UDFN Exposed Pad
패키지: -
재고15,207
PMEG40T10ERX
Nexperia USA Inc.

DIODE SCHOTTKY 40V 1A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 400 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 11.5 ns
  • Current - Reverse Leakage @ Vr: 22 µA @ 40 V
  • Capacitance @ Vr, F: 350pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고49,359