페이지 40 - ON Semiconductor 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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ON Semiconductor 제품 - 다이오드 - 정류기 - 단일

기록 1,234
페이지  40/45
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot MURS205T3
ON Semiconductor

DIODE GEN PURP 50V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 940mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -60°C ~ 175°C
패키지: DO-214AA, SMB
재고5,856
50V
2A
940mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 50V
-
Surface Mount
DO-214AA, SMB
SMB
-60°C ~ 175°C
hot MURD550PFT4G
ON Semiconductor

DIODE GEN PURP 520V 5A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고32,604
520V
5A
1.15V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
-65°C ~ 175°C
MURD550PFT4
ON Semiconductor

DIODE GEN PURP 520V 5A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,344
520V
5A
1.15V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
-65°C ~ 175°C
MURD340T4
ON Semiconductor

DIODE GEN PURP 400V 3A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고2,480
400V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
-55°C ~ 175°C
hot MURD310T4
ON Semiconductor

DIODE GEN PURP 100V 3A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고9,648
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
-65°C ~ 175°C
MURD305RL
ON Semiconductor

DIODE GEN PURP 50V 3A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,776
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
-65°C ~ 175°C
hot MUR805
ON Semiconductor

DIODE GEN PURP 50V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고56,568
50V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
MUR550PFG
ON Semiconductor

DIODE GEN PURP 520V 5A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고6,560
520V
5A
1.15V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
MUR550PF
ON Semiconductor

DIODE GEN PURP 520V 5A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고3,936
520V
5A
1.15V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
TO-220-2
TO-220AC
-65°C ~ 175°C
MUR550APFRLG
ON Semiconductor

DIODE GEN PURP 520V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고4,080
520V
5A
1.15V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR550APFRL
ON Semiconductor

DIODE GEN PURP 520V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고6,192
520V
5A
1.15V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR550APFG
ON Semiconductor

DIODE GEN PURP 520V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고2,976
520V
5A
1.15V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR550APF
ON Semiconductor

DIODE GEN PURP 520V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고7,920
520V
5A
1.15V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR490E
ON Semiconductor

DIODE GEN PURP 900V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 900V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 25µA @ 900V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고6,048
900V
4A
1.85V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
25µA @ 900V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR480ERL
ON Semiconductor

DIODE GEN PURP 800V 4A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 25µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AD, Axial
재고2,128
800V
4A
1.85V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
25µA @ 800V
-
Through Hole
DO-201AD, Axial
Axial
-65°C ~ 175°C
hot MUR460
ON Semiconductor

DIODE GEN PURP 600V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고155,796
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR450PFRLG
ON Semiconductor

DIODE GEN PURP 520V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고2,832
520V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR450PFRL
ON Semiconductor

DIODE GEN PURP 520V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고7,728
520V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR450PFG
ON Semiconductor

DIODE GEN PURP 520V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고2,480
520V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR450PF
ON Semiconductor

DIODE GEN PURP 520V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 520V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 5µA @ 520V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고2,208
520V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
5µA @ 520V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
MUR440RL
ON Semiconductor

DIODE GEN PURP 400V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고6,128
400V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
hot MUR440
ON Semiconductor

DIODE GEN PURP 400V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고13,248
400V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
hot MUR415RL
ON Semiconductor

DIODE GEN PURP 150V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AD, Axial
재고93,888
150V
4A
890mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 175°C
hot MUR4100E
ON Semiconductor

DIODE GEN PURP 1KV 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 25µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고5,792
1000V
4A
1.85V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
25µA @ 1000V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
hot MUR410
ON Semiconductor

DIODE GEN PURP 100V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 890mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-201AA, DO-27, Axial
재고181,800
100V
4A
890mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 175°C
hot MUR260RL
ON Semiconductor

DIODE GEN PURP 600V 2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AL, DO-41, Axial
재고5,568
600V
2A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
hot MUR260
ON Semiconductor

DIODE GEN PURP 600V 2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AL, DO-41, Axial
재고192,000
600V
2A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
hot MUR240RL
ON Semiconductor

DIODE GEN PURP 400V 2A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AL, DO-41, Axial
재고55,200
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
5µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C