페이지 9 - ON Semiconductor 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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ON Semiconductor 제품 - 다이오드 - 정류기 - 단일

기록 1,234
페이지  9/45
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot SURS8220T3G
ON Semiconductor

DIODE GP ULT FAST 200V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AA, SMB
재고30,000
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
hot MURA230T3G
ON Semiconductor

DIODE GEN PURP 300V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AC, SMA
재고1,797,000
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
5µA @ 300V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot SB07-03C-TB-E
ON Semiconductor

DIODE SCHOTTKY 30V 700MA 3CP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 700mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 700mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 80µA @ 15V
  • Capacitance @ Vr, F: 25pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: TO-236-3, SC-59, SOT-23-3
재고1,261,788
30V
700mA
550mV @ 700mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
80µA @ 15V
25pF @ 10V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
-55°C ~ 125°C
hot SB05-05C-TB-E
ON Semiconductor

DIODE SCHOTTKY 50V 500MA 3CP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10ns
  • Current - Reverse Leakage @ Vr: 50µA @ 25V
  • Capacitance @ Vr, F: 17pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: TO-236-3, SC-59, SOT-23-3
재고737,904
50V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
10ns
50µA @ 25V
17pF @ 10V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
-55°C ~ 125°C
hot MURA130T3G
ON Semiconductor

DIODE GEN PURP 300V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AC, SMA
재고1,560,360
300V
2A
1.1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
65ns
5µA @ 300V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
1N5402RLG
ON Semiconductor

DIODE GEN PURP 200V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AA, DO-27, Axial
재고20,124
200V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 150°C
hot MURS115T3G
ON Semiconductor

DIODE GEN PURP 150V 2A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AA, SMB
재고601,440
150V
2A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
-
Surface Mount
DO-214AA, SMB
SMB
-65°C ~ 175°C
hot NSR02F30NXT5G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA 2DSN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 30V
  • Capacitance @ Vr, F: 7pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: 2-DSN (0.60x0.30)
  • Operating Temperature - Junction: 125°C (Max)
패키지: 2-XFDFN
재고5,788,260
30V
200mA (DC)
550mV @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
50µA @ 30V
7pF @ 5V, 1MHz
Surface Mount
2-XFDFN
2-DSN (0.60x0.30)
125°C (Max)
hot MURA115T3G
ON Semiconductor

DIODE GEN PURP 150V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AC, SMA
재고1,578,492
150V
2A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
hot SS22T3G
ON Semiconductor

DIODE SCHOTTKY 20V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고783,672
20V
2A
500mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 40V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
NSVBAT54WT1G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOT323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: SC-70, SOT-323
재고22,608
30V
200mA (DC)
800mV @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-70, SOT-323
SOT-323
-55°C ~ 125°C
hot MR851RLG
ON Semiconductor

DIODE GEN PURP 100V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-201AD, Axial
재고173,064
100V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
10µA @ 100V
-
Through Hole
DO-201AD, Axial
Axial
-65°C ~ 125°C
hot MURA215T3G
ON Semiconductor

DIODE GEN PURPOSE 150V 2A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-214AC, SMA
재고1,920,000
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
-
Surface Mount
DO-214AC, SMA
SMA
-65°C ~ 175°C
1N5407RLG
ON Semiconductor

DIODE GEN PURP 800V 3A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-201AA, DO-27, Axial
재고42,966
800V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
-
Through Hole
DO-201AA, DO-27, Axial
Axial
-65°C ~ 150°C
hot 1N5818RLG
ON Semiconductor

DIODE SCHOTTKY 30V 1A AXIAL

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 125°C
패키지: DO-204AL, DO-41, Axial
재고265,560
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 125°C
hot NSR01F30NXT5G
ON Semiconductor

DIODE SCHOTTKY 30V 100MA 2DSN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 30V
  • Capacitance @ Vr, F: 7pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XFDFN
  • Supplier Device Package: 2-DSN (0.60x0.30)
  • Operating Temperature - Junction: 125°C (Max)
패키지: 2-XFDFN
재고6,832
30V
100mA (DC)
500mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
50µA @ 30V
7pF @ 5V, 1MHz
Surface Mount
2-XFDFN
2-DSN (0.60x0.30)
125°C (Max)
hot MUR115RLG
ON Semiconductor

DIODE GEN PURP 150V 1A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 875mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: Axial
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-204AL, DO-41, Axial
재고95,220
150V
1A
875mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 150V
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
hot MRS1504T3G
ON Semiconductor

DIODE GEN PURP 400V 1.5A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.04V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고480,000
400V
1.5A
1.04V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
1µA @ 400V
-
Surface Mount
DO-214AA, SMB
SMB
-55°C ~ 150°C
hot SBAS20LT1G
ON Semiconductor

DIODE GEN PURP 200V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 150V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-236-3, SC-59, SOT-23-3
재고36,000
200V
200mA (DC)
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 150V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-55°C ~ 150°C
BAT54M3T5G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOT723

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOT-723
  • Supplier Device Package: SOT-723
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: SOT-723
재고134,502
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SOT-723
SOT-723
-55°C ~ 125°C
BAT54XV2T5G
ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD523

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 2µA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523
  • Operating Temperature - Junction: -55°C ~ 125°C
패키지: SC-79, SOD-523
재고136,050
30V
200mA (DC)
800mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
5ns
2µA @ 25V
10pF @ 1V, 1MHz
Surface Mount
SC-79, SOD-523
SOD-523
-55°C ~ 125°C
hot BAS16TT1G
ON Semiconductor

DIODE GEN PURP 100V 200MA SC75

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 6ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75, SOT-416
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: SC-75, SOT-416
재고1,132,680
100V
200mA (DC)
1.25V @ 150mA
Small Signal =< 200mA (Io), Any Speed
6ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
-55°C ~ 150°C
1N4934RLG
ON Semiconductor

DIODE GEN PURP 100V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-204AL, DO-41, Axial
재고126,870
100V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 100V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
hot 1N4936RLG
ON Semiconductor

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-204AL, DO-41, Axial
재고17,100
400V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 400V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
1N4933RLG
ON Semiconductor

DIODE GEN PURP 50V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: DO-204AL, DO-41, Axial
재고215,568
50V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 50V
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
hot BAS21LT3G
ON Semiconductor

DIODE GEN PURP 250V 200MA SOT23

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: TO-236-3, SC-59, SOT-23-3
재고120,000
250V
200mA (DC)
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
-55°C ~ 150°C
hot MBR40250TG
ON Semiconductor

DIODE SCHOTTKY 250V 40A TO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 250V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 30µA @ 250V
  • Capacitance @ Vr, F: 500pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Operating Temperature - Junction: -65°C ~ 150°C
패키지: TO-220-3
재고19,872
250V
40A
970mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
30µA @ 250V
500pF @ 5V, 1MHz
Through Hole
TO-220-3
TO-220AB
-65°C ~ 150°C
hot MUR1540G
ON Semiconductor

DIODE GEN PURP 400V 15A TO220-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: TO-220-2
재고375,732
400V
15A
1.25V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 400V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C