페이지 80 - ON Semiconductor 제품 - 트랜지스터 - 양극(BJT) - 단일 | Heisener Electronics
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ON Semiconductor 제품 - 트랜지스터 - 양극(BJT) - 단일

기록 2,403
페이지  80/86
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BC557CZL1G
ON Semiconductor

TRANS PNP 45V 0.1A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 320MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고3,568
100mA
45V
650mV @ 5mA, 100mA
100nA
420 @ 2mA, 5V
625mW
320MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BC327-40ZL1G
ON Semiconductor

TRANS PNP 45V 0.8A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 800mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 1.5W
  • Frequency - Transition: 260MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고556,980
800mA
45V
700mV @ 50mA, 500mA
100nA
250 @ 100mA, 1V
1.5W
260MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BC637RL1G
ON Semiconductor

TRANS NPN 60V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,832
1A
60V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2SC6082
ON Semiconductor

TRANS NPN 50V 15A TO-220ML

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 375mA, 7.5A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 330mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 195MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220ML
패키지: TO-220-3 Full Pack
재고17,592
15A
50V
400mV @ 375mA, 7.5A
10µA (ICBO)
200 @ 330mA, 2V
2W
195MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220ML
hot MSB709-RT1G
ON Semiconductor

TRANS PNP 45V 0.1A SC59

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
  • Power - Max: 200mW
  • Frequency - Transition: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SC-59
패키지: TO-236-3, SC-59, SOT-23-3
재고2,668,260
100mA
45V
500mV @ 10mA, 100mA
100nA
210 @ 2mA, 10V
200mW
-
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SC-59
hot MPSW56RLRPG
ON Semiconductor

TRANS PNP 80V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)
재고101,496
500mA
80V
500mV @ 10mA, 250mA
500nA
50 @ 250mA, 1V
1W
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92
MPSW56RLRAG
ON Semiconductor

TRANS PNP 80V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 250mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 250mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)
재고5,408
500mA
80V
500mV @ 10mA, 250mA
500nA
50 @ 250mA, 1V
1W
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92
MPSW45AZL1G
ON Semiconductor

TRANS NPN DARL 50V 1A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)
재고2,896
1A
50V
1.5V @ 2mA, 1A
100nA (ICBO)
25000 @ 200mA, 5V
1W
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92
hot MPSW06RLRAG
ON Semiconductor

TRANS NPN 80V 0.5A TO92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)
재고169,752
500mA
80V
400mV @ 10mA, 250mA
500nA
60 @ 250mA, 1V
1W
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92
MPSA13ZL1G
ON Semiconductor

TRANS NPN DARL 30V 0.5A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고6,912
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
625mW
125MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPSA13RLRPG
ON Semiconductor

TRANS NPN DARL 30V 0.5A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고2,432
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
625mW
125MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPSA13RLRMG
ON Semiconductor

TRANS NPN DARL 30V 0.5A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고6,704
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
625mW
125MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot MPS751RLRPG
ON Semiconductor

TRANS PNP 60V 2A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,928
2A
60V
500mV @ 200mA, 2A
100nA (ICBO)
75 @ 1A, 2V
625mW
75MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPS6601RLRAG
ON Semiconductor

TRANS NPN 25V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,400
1A
25V
600mV @ 100mA, 1A
100nA
50 @ 500mA, 1V
625mW
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot MPS650ZL1G
ON Semiconductor

TRANS NPN 40V 2A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고6,464
2A
40V
500mV @ 200mA, 2A
100nA (ICBO)
75 @ 1A, 2V
625mW
75MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MPS650RLRAG
ON Semiconductor

TRANS NPN 40V 2A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,144
2A
40V
500mV @ 200mA, 2A
100nA (ICBO)
75 @ 1A, 2V
625mW
75MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MMBTA70LT1G
ON Semiconductor

TRANS PNP 40V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
  • Power - Max: 225mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고5,904
100mA
40V
250mV @ 1mA, 10mA
100nA (ICBO)
40 @ 5mA, 10V
225mW
125MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MJD18002D2T4G
ON Semiconductor

TRANS NPN 450V 2A DPAK

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V
  • Power - Max: 50W
  • Frequency - Transition: 13MHz
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
패키지: TO-252-3, DPak (2 Leads + Tab), SC-63
재고3,600
2A
450V
750mV @ 200mA, 1A
100µA
6 @ 1A, 1V
50W
13MHz
-65°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
hot BCX71JLT1G
ON Semiconductor

TRANS PNP 45V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
패키지: TO-236-3, SC-59, SOT-23-3
재고360,000
100mA
45V
550mV @ 1.25mA, 50mA
20nA
250 @ 2mA, 5V
350mW
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
hot BC639ZL1G
ON Semiconductor

TRANS NPN 80V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고5,696
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BC639RL1G
ON Semiconductor

TRANS NPN 80V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고5,200
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
40 @ 150mA, 2V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BC639-16ZL1G
ON Semiconductor

TRANS NPN 80V 1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 625mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고21,420
1A
80V
500mV @ 50mA, 500mA
100nA (ICBO)
100 @ 150mA, 2V
625mW
200MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot 2SC4617T1G
ON Semiconductor

TRANS NPN 50V 0.1A SC75-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Power - Max: 125mW
  • Frequency - Transition: 180MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75, SOT-416
패키지: SC-75, SOT-416
재고2,230,200
100mA
50V
400mV @ 5mA, 60mA
500nA (ICBO)
120 @ 1mA, 6V
125mW
180MHz
150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
NSS20200W6T1G
ON Semiconductor

TRANS PNP 20V 2A SC-88

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 215mV @ 20mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
  • Power - Max: 555mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
패키지: 6-TSSOP, SC-88, SOT-363
재고3,888
2A
20V
215mV @ 20mA, 2A
100nA (ICBO)
200 @ 1A, 2V
555mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
hot MPSW92RLRAG
ON Semiconductor

TRANS PNP 300V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max): 250nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
  • Power - Max: 1W
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)
재고72,252
500mA
300V
500mV @ 2mA, 20mA
250nA (ICBO)
25 @ 30mA, 10V
1W
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92
MPSW45ARLRAG
ON Semiconductor

TRANS NPN DARL 50V 1A TO-92

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
  • Power - Max: 1W
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92
패키지: TO-226-3, TO-92-3 Long Body (Formed Leads)
재고5,600
1A
50V
1.5V @ 2mA, 1A
100nA (ICBO)
25000 @ 200mA, 5V
1W
100MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92
MPSA63RLRAG
ON Semiconductor

TRANS PNP DARL 30V 0.5A TO-92

  • Transistor Type: PNP - Darlington
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
  • Power - Max: 625mW
  • Frequency - Transition: 125MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고2,992
500mA
30V
1.5V @ 100µA, 100mA
100nA (ICBO)
10000 @ 100mA, 5V
625mW
125MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot MPSA56RLRMG
ON Semiconductor

TRANS PNP 80V 0.5A TO-92

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
  • Power - Max: 625mW
  • Frequency - Transition: 50MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
패키지: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
재고4,896
500mA
80V
250mV @ 10mA, 100mA
100nA
100 @ 100mA, 1V
625mW
50MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3