ON Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

NDD04N50ZT4G

ON Semiconductor

MOSFET N-CH 500V 3A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 308pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 61W (Tc)
• Rds On (Max) @ Id, Vgs: 2.7 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

NTMFS4923NET1G

ON Semiconductor

MOSFET N-CH 30V 91A SO-8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 91A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 4850pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 930mW (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

패키지: 8-PowerTDFN, 5 Leads

NTMS4920NR2G

ON Semiconductor

MOSFET N-CH 30V 10.6A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4068pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 820mW (Ta)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

NTMS7N03R2G

ON Semiconductor

MOSFET N-CH 30V 4.8A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

NTMFS4934NT3G

ON Semiconductor

MOSFET N-CH 30V 147A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 147A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5505pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 930mW (Ta), 69.44W (Tc)
• Rds On (Max) @ Id, Vgs: 2 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

패키지: 8-PowerTDFN, 5 Leads

ECH8310-TL-H

ON Semiconductor

MOSFET P-CH 30V 9A ECH8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-ECH
• Package / Case: 8-SMD, Flat Lead

패키지: 8-SMD, Flat Lead

NVF5P03T3G

ON Semiconductor

MOSFET P-CH 30V 3.7A SOT-223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 5.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

패키지: TO-261-4, TO-261AA

NTMFS5C468NLT1G

ON Semiconductor

MOSFET N-CH 40V SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
• Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

패키지: 8-PowerTDFN

ATP106-TL-H

ON Semiconductor

MOSFET P-CH 40V 30A ATPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 15A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: ATPAK
• Package / Case: ATPAK (2 leads+tab)

패키지: ATPAK (2 leads+tab)

NTNS3193NZT5G

ON Semiconductor

MOSFET N-CH 20V 0.224A XLLGA3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 15.8pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 120mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-XLLGA (0.62x0.62)
• Package / Case: 3-XFLGA

패키지: 3-XFLGA

1HP04CH-TL-W

ON Semiconductor

MOSFET P-CH 100V 0.17A SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 18 Ohm @ 80mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-CPH
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

EFC4612R-TR

ON Semiconductor

MOSFET N-CH 24V 6A EFCP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 24V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: EFCP1313-4CC-037
• Package / Case: 4-XFBGA

패키지: 4-XFBGA

NTD3055-150T4G

ON Semiconductor

MOSFET N-CH 60V 9A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

NVD3055L170T4G-VF01

ON Semiconductor

MOSFET N-CH 60V 9A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 25V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 28.5W (Tj)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 4.5A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

ATP404-TL-H

ON Semiconductor

MOSFET N-CH 60V 95A ATPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 95A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 70W (Tc)
• Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 48A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: ATPAK
• Package / Case: ATPAK (2 leads+tab)

패키지: ATPAK (2 leads+tab)

NTNS3190NZT5G

ON Semiconductor

MOSFET N-CH 20V 0.224A XLLGA3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 224mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 15.8pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 120mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 100mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 3-XLLGA (0.62x0.62)
• Package / Case: 3-XFDFN

패키지: 3-XFDFN

NTTFS4928NTAG

ON Semiconductor

MOSFET N-CH 30V 7.3A 8WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 37A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 913pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 810mW (Ta), 20.8W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

패키지: 8-PowerWDFN

SVD5867NLT4G

ON Semiconductor

MOSFET N-CH 60V 18A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 675pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Ta), 43W (Tc)
• Rds On (Max) @ Id, Vgs: 39 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

NTMS4801NR2G

ON Semiconductor

MOSFET N-CH 30V 7.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2201pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 12A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

NTLJS4114NT1G

ON Semiconductor

MOSFET N-CH 30V 3.6A 6-WDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-WDFN (2x2)
• Package / Case: 6-WDFN Exposed Pad

패키지: 6-WDFN Exposed Pad

NTLUS3A18PZTAG

ON Semiconductor

MOSFET P-CH 20V 8.2A 6UDFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-UDFN (2x2)
• Package / Case: 6-UDFN Exposed Pad

패키지: 6-UDFN Exposed Pad

NVD5807NT4G-VF01

ON Semiconductor

MOSFET N-CH 40V 23A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 603pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

NTD4863NT4G

ON Semiconductor

MOSFET N-CH 25V 9.2A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
• Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

CPH6354-TL-W

ON Semiconductor

MOSFET P-CH 60V 4A CPH6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-CPH
• Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: SOT-23-6 Thin, TSOT-23-6

NTHD3101FT1G

ON Semiconductor

MOSFET P-CH 20V 3.2A CHIPFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 10V
• Vgs (Max): ±8V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: ChipFET?
• Package / Case: 8-SMD, Flat Lead

패키지: 8-SMD, Flat Lead

PCP1403-TD-H

ON Semiconductor

MOSFET N-CH 60V 4.5A SOT89

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.5W (Tc)
• Rds On (Max) @ Id, Vgs: 117 mOhm @ 2A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-89/PCP-1
• Package / Case: TO-243AA

패키지: TO-243AA

NVTR01P02LT1G

ON Semiconductor

MOSFET P-CH 20V 1.3A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 5V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 750mA, 4.5V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

NTA4151PT1G

ON Semiconductor

MOSFET P-CH 20V 0.76A SOT-416

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 760mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 450mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 156pF @ 5V
• Vgs (Max): ±6V
• FET Feature: -
• Power Dissipation (Max): 301mW (Tj)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 350mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75, SOT-416
• Package / Case: SC-75, SOT-416

패키지: SC-75, SOT-416