페이지 7 - Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일 | Heisener Electronics
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Rohm Semiconductor 제품 - 트랜지스터 - FET, MOSFET - 단일

기록 1,247
페이지  7/45
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제조업체
설명
패키지
재고
수량
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
RSQ035N06HZGTR
Rohm Semiconductor

MOSFET N-CH 60V 3.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고26,211
MOSFET (Metal Oxide)
60 V
3.5A (Tc)
4V, 10V
3V @ 1mA
6.5 nC @ 5 V
430 pF @ 10 V
±20V
-
950mW (Ta)
70mOhm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RSS070P05FRATB
Rohm Semiconductor

MOSFET P-CH 45V 7A 8SOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
Request a Quote
MOSFET (Metal Oxide)
45 V
7A (Ta)
4V, 10V
2.5V @ 1mA
47.6 nC @ 5 V
4100 pF @ 10 V
±20V
-
2W (Ta)
27mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
R6504KNXC7G
Rohm Semiconductor

650V 4A TO-220FM, HIGH-SPEED SWI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05Ohm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고2,985
MOSFET (Metal Oxide)
650 V
4A (Ta)
10V
5V @ 130µA
10 nC @ 10 V
270 pF @ 25 V
±20V
-
40W (Tc)
1.05Ohm @ 1.5A, 10V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
R6030JNZC17
Rohm Semiconductor

MOSFET N-CH 600V 30A TO3PF

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 5.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 93W (Tc)
  • Rds On (Max) @ Id, Vgs: 143mOhm @ 15A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
패키지: -
재고900
MOSFET (Metal Oxide)
600 V
30A (Tc)
15V
7V @ 5.5mA
74 nC @ 15 V
2500 pF @ 100 V
±30V
-
93W (Tc)
143mOhm @ 15A, 15V
150°C (TJ)
Through Hole
TO-3PF
TO-3P-3 Full Pack
RSS070P05HZGTB
Rohm Semiconductor

PCH -45V -7A POWER MOSFET. RSS07

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
재고13,809
MOSFET (Metal Oxide)
45 V
7A (Ta)
4V, 10V
2.5V @ 1mA
47.6 nC @ 5 V
4100 pF @ 10 V
±20V
-
2W (Ta)
27mOhm @ 7A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
RRS050P03HZGTB
Rohm Semiconductor

AUTOMOTIVE PCH -30V -5A POWER MO

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
재고7,290
MOSFET (Metal Oxide)
30 V
5A (Ta)
4V, 10V
2.5V @ 1mA
9.2 nC @ 5 V
850 pF @ 10 V
±20V
-
2W (Ta)
50mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
SCT4036KRHRC15
Rohm Semiconductor

1200V, 43A, 4-PIN THD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
  • Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 176W
  • Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
패키지: -
재고1,023
SiCFET (Silicon Carbide)
1200 V
43A (Tc)
18V
4.8V @ 11.1mA
91 nC @ 18 V
2335 pF @ 800 V
+21V, -4V
-
176W
47mOhm @ 21A, 18V
175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
RD3L140SPTL1
Rohm Semiconductor

MOSFET P-CH 60V 14A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 20W (Tc)
  • Rds On (Max) @ Id, Vgs: 84mOhm @ 14A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고94,950
MOSFET (Metal Oxide)
60 V
14A (Ta)
4V, 10V
3V @ 1mA
27 nC @ 10 V
1900 pF @ 10 V
±20V
-
20W (Tc)
84mOhm @ 14A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RS6G100BGTB1
Rohm Semiconductor

NCH 40V 100A, HSOP8, POWER MOSFE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 59W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
패키지: -
재고7,269
MOSFET (Metal Oxide)
40 V
100A (Tc)
4.5V, 10V
2.5V @ 1mA
24 nC @ 10 V
1510 pF @ 20 V
±20V
-
3W (Ta), 59W (Tc)
3.4mOhm @ 90A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
RV4C020ZPHZGTCR1
Rohm Semiconductor

PCH -20V -2.0A SMALL SIGNAL MOSF

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 2A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: DFN1616-6W
  • Package / Case: 6-PowerWFDFN
패키지: -
재고7,440
MOSFET (Metal Oxide)
20 V
2A (Ta)
1.5V, 4.5V
1.3V @ 1mA
2 nC @ 4.5 V
80 pF @ 10 V
±8V
-
1.5W (Ta)
260mOhm @ 2A, 4.5V
150°C (TJ)
Surface Mount, Wettable Flank
DFN1616-6W
6-PowerWFDFN
R6076KNZ4C13
Rohm Semiconductor

MOSFET N-CH 600V 76A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
600 V
76A (Tc)
10V
5V @ 1mA
165 nC @ 10 V
7400 pF @ 25 V
±20V
-
735W (Tc)
42mOhm @ 44.4A, 10V
150°C (TJ)
Through Hole
TO-247
TO-247-3
SCT4062KWATL
Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7LA
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
Request a Quote
SiC (Silicon Carbide Junction Transistor)
1200 V
24A (Tc)
18V
4.8V @ 6.45mA
64 nC @ 18 V
1498 pF @ 800 V
+21V, -4V
-
-
81mOhm @ 12A, 18V
175°C (TJ)
Surface Mount
TO-263-7LA
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
R6002JND4TL1
Rohm Semiconductor

600V 1A SOT-223-3, PRESTOMOS WIT

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 6.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.25Ohm @ 1A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-3
  • Package / Case: TO-261-3
패키지: -
재고11,994
MOSFET (Metal Oxide)
600 V
1A (Tc)
15V
7V @ 100µA
7 nC @ 15 V
130 pF @ 100 V
±30V
-
6.6W (Tc)
3.25Ohm @ 1A, 15V
150°C (TJ)
Surface Mount
SOT-223-3
TO-261-3
SCT4062KW7TL
Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 93W
  • Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7L
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
패키지: -
재고2,847
SiCFET (Silicon Carbide)
1200 V
24A (Tj)
18V
4.8V @ 6.45mA
64 nC @ 18 V
1498 pF @ 800 V
+21V, -4V
-
93W
81mOhm @ 12A, 18V
175°C (TJ)
Surface Mount
TO-263-7L
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
BSS670T116
Rohm Semiconductor

NCH 60V 650MA, SOT-23, SMALL SIG

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Rds On (Max) @ Id, Vgs: 680mOhm @ 650mA, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SST3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
패키지: -
재고1,509
MOSFET (Metal Oxide)
60 V
650mA (Ta)
2.5V, 10V
2V @ 10µA
-
47 pF @ 30 V
±20V
-
200mW (Ta)
680mOhm @ 650mA, 10V
150°C (TJ)
Surface Mount
SST3
TO-236-3, SC-59, SOT-23-3
R8007AND3FRATL
Rohm Semiconductor

MOSFET N-CH 800V 7A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.6Ohm @ 3.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고14,802
MOSFET (Metal Oxide)
800 V
7A (Tc)
10V
5V @ 1mA
28 nC @ 10 V
850 pF @ 25 V
±30V
-
140W (Tc)
1.6Ohm @ 3.5A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
R6004PND3FRATL
Rohm Semiconductor

MOSFET N-CH 600V 4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 65W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고13,605
MOSFET (Metal Oxide)
600 V
4A (Tc)
10V
4.5V @ 1mA
11 nC @ 10 V
280 pF @ 25 V
±25V
-
65W (Tc)
1.8Ohm @ 2A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RX3R05BBHC16
Rohm Semiconductor

NCH 150V 50A, TO-220AB, POWER MO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 25A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
재고2,835
MOSFET (Metal Oxide)
150 V
50A (Tc)
6V, 10V
4V @ 1mA
37 nC @ 10 V
2150 pF @ 75 V
±20V
-
89W (Tc)
29mOhm @ 25A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RQ6E045TNTR
Rohm Semiconductor

MOSFET N-CH 30V 4.5A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고33,195
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
2.5V, 4.5V
1.5V @ 1mA
10.7 nC @ 4.5 V
540 pF @ 10 V
±12V
-
950mW (Ta)
43mOhm @ 4.5A, 4.5V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RSR015P06HZGTL
Rohm Semiconductor

MOSFET P-CH 60V 1.5A TSMT3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 280mOhm @ 1.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT3
  • Package / Case: SC-96
패키지: -
재고9,000
MOSFET (Metal Oxide)
60 V
1.5A (Ta)
4V, 10V
3V @ 1mA
10 nC @ 10 V
500 pF @ 10 V
±20V
-
700mW (Ta)
280mOhm @ 1.5A, 10V
150°C (TJ)
Surface Mount
TSMT3
SC-96
R6006JNXC7G
Rohm Semiconductor

MOSFET N-CH 600V 6A TO220FM

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 7V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
  • Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220FM
  • Package / Case: TO-220-3 Full Pack
패키지: -
재고2,622
MOSFET (Metal Oxide)
600 V
6A (Tc)
15V
7V @ 800µA
15.5 nC @ 15 V
410 pF @ 100 V
±30V
-
43W (Tc)
936mOhm @ 3A, 15V
150°C (TJ)
Through Hole
TO-220FM
TO-220-3 Full Pack
RSQ020N03HZGTR
Rohm Semiconductor

MOSFET N-CH 30V 2A TSMT6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 134mOhm @ 2A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
재고3,690
MOSFET (Metal Oxide)
30 V
2A (Ta)
4V, 10V
2.5V @ 1mA
3.1 nC @ 5 V
110 pF @ 10 V
±20V
-
950mW (Ta)
134mOhm @ 2A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
RQ6E045RPTR
Rohm Semiconductor

MOSFET P-CH 30V 4.5A TSMT6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 950mW (Ta)
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 4.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSMT6 (SC-95)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
패키지: -
Request a Quote
MOSFET (Metal Oxide)
30 V
4.5A (Ta)
4V, 10V
2.5V @ 1mA
14 nC @ 5 V
1350 pF @ 10 V
±20V
-
950mW (Ta)
35mOhm @ 4.5A, 10V
150°C (TJ)
Surface Mount
TSMT6 (SC-95)
SOT-23-6 Thin, TSOT-23-6
SCT4026DEHRC11
Rohm Semiconductor

750V, 56A, 3-PIN THD, TRENCH-STR

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 750 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Vgs(th) (Max) @ Id: 4.8V @ 15.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 500 V
  • Vgs (Max): +21V, -4V
  • FET Feature: -
  • Power Dissipation (Max): 176W
  • Rds On (Max) @ Id, Vgs: 34mOhm @ 29A, 18V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247N
  • Package / Case: TO-247-3
패키지: -
재고1,440
SiCFET (Silicon Carbide)
750 V
56A (Tc)
18V
4.8V @ 15.4mA
94 nC @ 18 V
2320 pF @ 500 V
+21V, -4V
-
176W
34mOhm @ 29A, 18V
175°C (TJ)
Through Hole
TO-247N
TO-247-3
RJ1U330AAFRGTL
Rohm Semiconductor

MOSFET N-CH 250V 33A LPTS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250 V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 211W (Tc)
  • Rds On (Max) @ Id, Vgs: 105mOhm @ 16.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
패키지: -
재고243
MOSFET (Metal Oxide)
250 V
33A (Tc)
10V
5V @ 1mA
80 nC @ 10 V
4500 pF @ 25 V
±30V
-
211W (Tc)
105mOhm @ 16.5A, 10V
150°C (TJ)
Surface Mount
LPTS
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
R6535KNX3C16
Rohm Semiconductor

650V 35A, TO-220AB, HIGH-SPEED S

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 115mOhm @ 18.1A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
패키지: -
Request a Quote
MOSFET (Metal Oxide)
650 V
35A (Tc)
10V
5V @ 1.3mA
72 nC @ 10 V
3000 pF @ 25 V
±20V
-
370W (Tc)
115mOhm @ 18.1A, 10V
150°C (TJ)
Through Hole
TO-220AB
TO-220-3
RD3G600GNTL
Rohm Semiconductor

MOSFET N-CH 40V 60A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6mOhm @ 60A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
패키지: -
재고7,398
MOSFET (Metal Oxide)
40 V
60A (Tc)
4.5V, 10V
2.5V @ 1mA
46.5 nC @ 10 V
3400 pF @ 20 V
±20V
-
40W (Tc)
3.6mOhm @ 60A, 10V
150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63
RS3G160ATTB1
Rohm Semiconductor

PCH -40V -16A POWER MOSFET - RS3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 16A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
패키지: -
재고20,724
MOSFET (Metal Oxide)
40 V
16A (Ta)
4.5V, 10V
2.5V @ 1mA
120 nC @ 10 V
6250 pF @ 20 V
±20V
-
1.4W (Ta)
6.2mOhm @ 16A, 10V
150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)