페이지 128 - Rohm Semiconductor 제품

부품 번호	제조업체	설명	패키지	재고
RQ1E100XNTR	Rohm Semiconductor	MOSFET N-CH 30V 10A TSMT8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 550mW (Ta) Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSMT8 Package / Case: 8-SMD, Flat Lead	패키지: 8-SMD, Flat Lead	재고7,728
2SD1949T106Q	Rohm Semiconductor	TRANS NPN 50V 0.5A SOT-323 Transistor Type: NPN Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V Power - Max: 200mW Frequency - Transition: 250MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: UMT3	패키지: SC-70, SOT-323	재고1,106,400
DTD114GCT116	Rohm Semiconductor	NPN 500MA/50V DIGITAL TRANSISTOR Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SST3	패키지: TO-236-3, SC-59, SOT-23-3	재고26,028
BM63763S-VA	Rohm Semiconductor	IC IPM 600V IGBT SW 25HSDIP Type: IGBT Configuration: 3 Phase Inverter Current: 10A Voltage: 600V Voltage - Isolation: 1500Vrms Package / Case: 25-PowerDIP Module (1.134", 28.80mm)	패키지: 25-PowerDIP Module (1.134", 28.80mm)	재고5,408
BD18HA5MEFJ-ME2	Rohm Semiconductor	IC REG LIN 1.8V 500MA 8HTSOP-J Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 8V Voltage - Output (Min/Fixed): 1.8V Voltage - Output (Max): - Voltage Dropout (Max): 1.2V @ 500mA Current - Output: 500mA Current - Quiescent (Iq): - Current - Supply (Max): 0.6mA ~ 0.9mA PSRR: - Control Features: Enable Protection Features: Over Current, Over Temperature, Soft Start Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-HTSOP-J	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고2,000
BU9795AFV-LBE2	Rohm Semiconductor	IC LCD DVR 27X4COM IND 40SSOP Display Type: LCD Configuration: 108 Segment Interface: 3-Wire Serial Digits or Characters: - Current - Supply: 12.5µA Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 40-SSOP (0.213", 5.40mm Width) Supplier Device Package: 40-SSOPB	패키지: 40-SSOP (0.213", 5.40mm Width)	재고20,292
BR24C64-MN6TP	Rohm Semiconductor	IC EEPROM 64KBIT 400KHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,464
BU9832GUL-WE2	Rohm Semiconductor	IC EEPROM 8KBIT 5MHZ VCSP50L2 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFBGA, CSPBGA Supplier Device Package: 8-VCSP50L2 (2.09x1.85)	패키지: 8-UFBGA, CSPBGA	재고4,160
BR93L86RFV-WE2	Rohm Semiconductor	IC EEPROM 16KBIT 2MHZ 8SSOPB Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (1K x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-SSOPB	패키지: 8-LSSOP (0.173", 4.40mm Width)	재고120,000
MCR10EZPF6493	Rohm Semiconductor	RES SMD 649K OHM 1% 1/8W 0805 Resistance: 649 kOhms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고8,424
MCR18EZHF1743	Rohm Semiconductor	RES SMD 174K OHM 1% 1/4W 1206 Resistance: 174 kOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고3,222
MCR10EZHF3832	Rohm Semiconductor	RES SMD 38.3K OHM 1% 1/8W 0805 Resistance: 38.3 kOhms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고7,560
MCR03EZPFX1823	Rohm Semiconductor	RES SMD 182K OHM 1% 1/10W 0603 Resistance: 182 kOhms Tolerance: ±1% Power (Watts): 0.1W, 1/10W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Height - Seated (Max): 0.022" (0.55mm) Number of Terminations: 2 Failure Rate: -	패키지: 0603 (1608 Metric)	재고8,532
KTR10EZPF1132	Rohm Semiconductor	RES SMD 11.3K OHM 1% 1/8W 0805 Resistance: 11.3 kOhms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고4,410
KTR10EZPF1963	Rohm Semiconductor	RES SMD 196K OHM 1% 1/8W 0805 Resistance: 196 kOhms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고8,478
ESR10EZPF27R4	Rohm Semiconductor	RES SMD 27.4 OHM 1% 0.4W 0805 Resistance: 27.4 Ohms Tolerance: ±1% Power (Watts): 0.4W Composition: Thick Film Features: Automotive AEC-Q200, Pulse Withstanding Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고3,546
ESR10EZPF1474	Rohm Semiconductor	RES SMD 1.47M OHM 1% 0.4W 0805 Resistance: 1.47 MOhms Tolerance: ±1% Power (Watts): 0.4W Composition: Thick Film Features: Automotive AEC-Q200, Pulse Withstanding Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고5,580
KTR10EZPJ165	Rohm Semiconductor	RES SMD 1.6M OHM 5% 1/8W 0805 Resistance: 1.6 MOhms Tolerance: ±5% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고8,514
ESR03EZPF1601	Rohm Semiconductor	RES SMD 1.6K OHM 1% 1/4W 0603 Resistance: 1.6 kOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: Automotive AEC-Q200, Pulse Withstanding Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Height - Seated (Max): 0.022" (0.55mm) Number of Terminations: 2 Failure Rate: -	패키지: 0603 (1608 Metric)	재고7,902
MCR03ERTJ304	Rohm Semiconductor	RES SMD 300K OHM 5% 1/10W 0603 Resistance: 300 kOhms Tolerance: ±5% Power (Watts): 0.1W, 1/10W Composition: Thick Film Features: - Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Height - Seated (Max): 0.022" (0.55mm) Number of Terminations: 2 Failure Rate: -	패키지: 0603 (1608 Metric)	재고5,850
MCR18ERTJ753	Rohm Semiconductor	RES SMD 75K OHM 5% 1/4W 1206 Resistance: 75 kOhms Tolerance: ±5% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: - Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고49,158
MCR10ERTJ113	Rohm Semiconductor	RES SMD 11K OHM 5% 1/8W 0805 Resistance: 11 kOhms Tolerance: ±5% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: - Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고48,510
KTR03EZPF5602	Rohm Semiconductor	RES SMD 56K OHM 1% 1/10W 0603 Resistance: 56 kOhms Tolerance: ±1% Power (Watts): 0.1W, 1/10W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Height - Seated (Max): 0.022" (0.55mm) Number of Terminations: 2 Failure Rate: -	패키지: 0603 (1608 Metric)	재고42,126
MCR50JZHFLR200	Rohm Semiconductor	RES SMD 0.2 OHM 1% 1/2W 2010 Resistance: 200 mOhms Tolerance: ±1% Power (Watts): 0.5W, 1/2W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±250ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 2010 (5025 Metric) Supplier Device Package: 2010 Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm) Height - Seated (Max): 0.028" (0.70mm) Number of Terminations: 2 Failure Rate: -	패키지: 2010 (5025 Metric)	재고48,000
MCR100JZHJ133	Rohm Semiconductor	RES SMD 13K OHM 5% 1W 2512 Resistance: 13 kOhms Tolerance: ±5% Power (Watts): 1W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 125°C Package / Case: 2512 (6432 Metric) Supplier Device Package: 2512 Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm) Height - Seated (Max): 0.028" (0.70mm) Number of Terminations: 2 Failure Rate: -	패키지: 2512 (6432 Metric)	재고30,714
RB098BM-60FHTL	Rohm Semiconductor	DIODE ARRAY SCHOTT 60V 6A TO252 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io) (per Diode): 6A Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	패키지: -	재고5,640
RB098BM150TL	Rohm Semiconductor	DIODE ARR SCHOTT 150V 6A TO252 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 6A Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7 µA @ 150 V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	패키지: -	재고7,500
RQ3E180AJTB1	Rohm Semiconductor	NCH 30V 18A MIDDLE POWER MOSFET: FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 2W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSMT (3.2x3) Package / Case: 8-PowerVDFN	패키지: -	재고8,832

RQ1E100XNTR

Rohm Semiconductor

MOSFET N-CH 30V 10A TSMT8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 10.5 mOhm @ 10A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TSMT8
Package / Case: 8-SMD, Flat Lead

패키지: 8-SMD, Flat Lead

재고7,728

2SD1949T106Q

Rohm Semiconductor

TRANS NPN 50V 0.5A SOT-323

Transistor Type: NPN
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 3V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3

패키지: SC-70, SOT-323

재고1,106,400

DTD114GCT116

Rohm Semiconductor

NPN 500MA/50V DIGITAL TRANSISTOR

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SST3

패키지: TO-236-3, SC-59, SOT-23-3

재고26,028

BM63763S-VA

Rohm Semiconductor

IC IPM 600V IGBT SW 25HSDIP

Type: IGBT
Configuration: 3 Phase Inverter
Current: 10A
Voltage: 600V
Voltage - Isolation: 1500Vrms
Package / Case: 25-PowerDIP Module (1.134", 28.80mm)

패키지: 25-PowerDIP Module (1.134", 28.80mm)

재고5,408

BD18HA5MEFJ-ME2

Rohm Semiconductor

IC REG LIN 1.8V 500MA 8HTSOP-J

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 8V
Voltage - Output (Min/Fixed): 1.8V
Voltage - Output (Max): -
Voltage Dropout (Max): 1.2V @ 500mA
Current - Output: 500mA
Current - Quiescent (Iq): -
Current - Supply (Max): 0.6mA ~ 0.9mA
PSRR: -
Control Features: Enable
Protection Features: Over Current, Over Temperature, Soft Start
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-HTSOP-J

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고2,000

BU9795AFV-LBE2

Rohm Semiconductor

IC LCD DVR 27X4COM IND 40SSOP

Display Type: LCD
Configuration: 108 Segment
Interface: 3-Wire Serial
Digits or Characters: -
Current - Supply: 12.5µA
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 40-SSOP (0.213", 5.40mm Width)
Supplier Device Package: 40-SSOPB

패키지: 40-SSOP (0.213", 5.40mm Width)

재고20,292

BR24C64-MN6TP

Rohm Semiconductor

IC EEPROM 64KBIT 400KHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,464

BU9832GUL-WE2

Rohm Semiconductor

IC EEPROM 8KBIT 5MHZ VCSP50L2

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA, CSPBGA
Supplier Device Package: 8-VCSP50L2 (2.09x1.85)

패키지: 8-UFBGA, CSPBGA

재고4,160

BR93L86RFV-WE2

Rohm Semiconductor

IC EEPROM 16KBIT 2MHZ 8SSOPB

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (1K x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-LSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-SSOPB

패키지: 8-LSSOP (0.173", 4.40mm Width)

재고120,000

MCR10EZPF6493

Rohm Semiconductor

RES SMD 649K OHM 1% 1/8W 0805

Resistance: 649 kOhms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고8,424

MCR18EZHF1743

Rohm Semiconductor

RES SMD 174K OHM 1% 1/4W 1206

Resistance: 174 kOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고3,222

MCR10EZHF3832

Rohm Semiconductor

RES SMD 38.3K OHM 1% 1/8W 0805

Resistance: 38.3 kOhms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고7,560

MCR03EZPFX1823

Rohm Semiconductor

RES SMD 182K OHM 1% 1/10W 0603

Resistance: 182 kOhms
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Height - Seated (Max): 0.022" (0.55mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0603 (1608 Metric)

재고8,532

KTR10EZPF1132

Rohm Semiconductor

RES SMD 11.3K OHM 1% 1/8W 0805

Resistance: 11.3 kOhms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고4,410

KTR10EZPF1963

Rohm Semiconductor

RES SMD 196K OHM 1% 1/8W 0805

Resistance: 196 kOhms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고8,478

ESR10EZPF27R4

Rohm Semiconductor

RES SMD 27.4 OHM 1% 0.4W 0805

Resistance: 27.4 Ohms
Tolerance: ±1%
Power (Watts): 0.4W
Composition: Thick Film
Features: Automotive AEC-Q200, Pulse Withstanding
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고3,546

ESR10EZPF1474

Rohm Semiconductor

RES SMD 1.47M OHM 1% 0.4W 0805

Resistance: 1.47 MOhms
Tolerance: ±1%
Power (Watts): 0.4W
Composition: Thick Film
Features: Automotive AEC-Q200, Pulse Withstanding
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고5,580

KTR10EZPJ165

Rohm Semiconductor

RES SMD 1.6M OHM 5% 1/8W 0805

Resistance: 1.6 MOhms
Tolerance: ±5%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고8,514

ESR03EZPF1601

Rohm Semiconductor

RES SMD 1.6K OHM 1% 1/4W 0603

Resistance: 1.6 kOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: Automotive AEC-Q200, Pulse Withstanding
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Height - Seated (Max): 0.022" (0.55mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0603 (1608 Metric)

재고7,902

MCR03ERTJ304

Rohm Semiconductor

RES SMD 300K OHM 5% 1/10W 0603

Resistance: 300 kOhms
Tolerance: ±5%
Power (Watts): 0.1W, 1/10W
Composition: Thick Film
Features: -
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Height - Seated (Max): 0.022" (0.55mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0603 (1608 Metric)

재고5,850

MCR18ERTJ753

Rohm Semiconductor

RES SMD 75K OHM 5% 1/4W 1206

Resistance: 75 kOhms
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: -
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고49,158

MCR10ERTJ113

Rohm Semiconductor

RES SMD 11K OHM 5% 1/8W 0805

Resistance: 11 kOhms
Tolerance: ±5%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: -
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고48,510

KTR03EZPF5602

Rohm Semiconductor

RES SMD 56K OHM 1% 1/10W 0603

Resistance: 56 kOhms
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Height - Seated (Max): 0.022" (0.55mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0603 (1608 Metric)

재고42,126

MCR50JZHFLR200

Rohm Semiconductor

RES SMD 0.2 OHM 1% 1/2W 2010

Resistance: 200 mOhms
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±250ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 2010 (5025 Metric)
Supplier Device Package: 2010
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Height - Seated (Max): 0.028" (0.70mm)
Number of Terminations: 2
Failure Rate: -

패키지: 2010 (5025 Metric)

재고48,000

MCR100JZHJ133

Rohm Semiconductor

RES SMD 13K OHM 5% 1W 2512

Resistance: 13 kOhms
Tolerance: ±5%
Power (Watts): 1W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 125°C
Package / Case: 2512 (6432 Metric)
Supplier Device Package: 2512
Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
Height - Seated (Max): 0.028" (0.70mm)
Number of Terminations: 2
Failure Rate: -

패키지: 2512 (6432 Metric)

재고30,714

RB098BM-60FHTL

Rohm Semiconductor

DIODE ARRAY SCHOTT 60V 6A TO252

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io) (per Diode): 6A
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

패키지: -

재고5,640

RB098BM150TL

Rohm Semiconductor

DIODE ARR SCHOTT 150V 6A TO252

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io) (per Diode): 6A
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7 µA @ 150 V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

패키지: -

재고7,500

RQ3E180AJTB1

Rohm Semiconductor

NCH 30V 18A MIDDLE POWER MOSFET:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4290 pF @ 15 V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 18A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-HSMT (3.2x3)
Package / Case: 8-PowerVDFN

패키지: -

재고8,832