Rohm Semiconductor 제품

R6004KNJTL

Rohm Semiconductor

MOSFET N-CH 600V 4A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 58W (Tc)
• Rds On (Max) @ Id, Vgs: 980 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

2SB1240TV2P

Rohm Semiconductor

TRANS PNP 32V 2A ATV

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 32V
• Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 500mA, 3V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 3-SIP
• Supplier Device Package: ATV

패키지: 3-SIP

DTA143TETL

Rohm Semiconductor

TRANS PREBIAS PNP 150MW EMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

패키지: SC-75, SOT-416

KDZVTR36B

Rohm Semiconductor

DIODE ZENER 36V 1W PMDU

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: -
• Power - Max: 1W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 10µA @ 27V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU

패키지: SOD-123F

SCS120AGC

Rohm Semiconductor

DIODE SCHOTTKY 600V 20A TO220AC

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 400µA @ 600V
• Capacitance @ Vr, F: 860pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 175°C (Max)

패키지: TO-220-2

BU4317F-TR

Rohm Semiconductor

IC DETECTOR VOLT 1.7V CMOS 4SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 1.7V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: 4-SOP

패키지: SC-82

BD49K30G-TL

Rohm Semiconductor

IC DETECTOR VOLT 3.0V CMOS SSOP3

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 3V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-SSOP

패키지: TO-236-3, SC-59, SOT-23-3

RPI-2501

Rohm Semiconductor

PHOTOINTERRUPTER ULTRAMINI

• Sensing Distance: 1.6mm
• Sensing Method: Transmissive
• Output Configuration: Phototransistor
• Current - DC Forward (If) (Max): 35mA
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 30V
• Response Time: 10µs
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: Module, Slotted

패키지: Module, Slotted

MCR18EZPF35R7

Rohm Semiconductor

RES SMD 35.7 OHM 1% 1/4W 1206

• Resistance: 35.7 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR18EZHF57R6

Rohm Semiconductor

RES SMD 57.6 OHM 1% 1/4W 1206

• Resistance: 57.6 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR18EZHF1374

Rohm Semiconductor

RES SMD 1.37M OHM 1% 1/4W 1206

• Resistance: 1.37 MOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR10EZHF52R3

Rohm Semiconductor

RES SMD 52.3 OHM 1% 1/8W 0805

• Resistance: 52.3 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

KTR25JZPJ3R0

Rohm Semiconductor

RES SMD 3 OHM 5% 1/3W 1210

• Resistance: 3 Ohms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

ESR10EZPF1470

Rohm Semiconductor

RES SMD 147 OHM 1% 0.4W 0805

• Resistance: 147 Ohms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

TRR03EZPF6802

Rohm Semiconductor

RES SMD 68K OHM 1% 1/10W 0603

• Resistance: 68 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR18ERTF30R0

Rohm Semiconductor

RES SMD 30 OHM 1% 1/4W 1206

• Resistance: 30 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

KTR25JZPF16R0

Rohm Semiconductor

RES SMD 16 OHM 1% 1/3W 1210

• Resistance: 16 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

KTR18EZPF3014

Rohm Semiconductor

RES SMD 3.01M OHM 1% 1/4W 1206

• Resistance: 3.01 MOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR25JZHF7322

Rohm Semiconductor

RES SMD 73.2K OHM 1% 1/4W 1210

• Resistance: 73.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

MCR100JZHFLR220

Rohm Semiconductor

RES SMD 0.22 OHM 1% 1W 2512

• Resistance: 220 mOhms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2512 (6432 Metric)

MCR03ERTF9101

Rohm Semiconductor

RES SMD 9.1K OHM 1% 1/10W 0603

• Resistance: 9.1 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

ESR10EZPJ270

Rohm Semiconductor

RES SMD 27 OHM 5% 0.4W 0805

• Resistance: 27 Ohms
• Tolerance: ±5%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

BR25G128F-3GE2

Rohm Semiconductor

SPI BUS EEPROM

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 128Kb (16K x 8)
• Memory Interface: SPI
• Clock Frequency: 20MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.173", 4.40mm Width)

BR93G46FJ-3AGE2

Rohm Semiconductor

IC EEPROM 1K MICRO BUS SOP-J8

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (64 x 16)
• Memory Interface: SPI
• Clock Frequency: 3MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.5V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

SCS312AHGC9

Rohm Semiconductor

DIODE SIL CARB 650V 12A TO220ACP

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 60 µA @ 650 V
• Capacitance @ Vr, F: 600pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220ACP
• Operating Temperature - Junction: 175°C (Max)

패키지: -

SP8M3FU6TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOP

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
• Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
• Power - Max: 2W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

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BR25H640F-2LBH2

Rohm Semiconductor

IC EEPROM 64KBIT SPI 5MHZ 8SOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 64Kbit
• Memory Interface: SPI
• Clock Frequency: 5 MHz
• Write Cycle Time - Word, Page: 4ms
• Access Time: -
• Voltage - Supply: 2.5V ~ 5.5V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

RR1LAM6STFTR

Rohm Semiconductor

DIODE GEN PURP 600V 1A PMDT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDT
• Operating Temperature - Junction: 150°C

패키지: -