Rohm Semiconductor 제품

RSR010N10TL

Rohm Semiconductor

MOSFET N-CH 100V 1.0A TSMT3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 540mW (Ta)
• Rds On (Max) @ Id, Vgs: 520 mOhm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT3
• Package / Case: SC-96

패키지: SC-96

SH8M41TB1

Rohm Semiconductor

MOSFET N/P-CH 80V 3.4A/2.6A SOP8

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

PTZTE256.8B

Rohm Semiconductor

DIODE ZENER 7.3V 1W PMDS

• Voltage - Zener (Nom) (Vz): 7.3V
• Tolerance: ±6%
• Power - Max: 1W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 20µA @ 3.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS

패키지: DO-214AC, SMA

BU4940FVE-TR

Rohm Semiconductor

IC VOLT DETECTOR STD 5-VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High/Active Low
• Reset Timeout: -
• Voltage - Threshold: 4V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: 5-VSOF

패키지: SOT-665

BR24G128FJ-3GTE2

Rohm Semiconductor

IC EEPROM 128KBIT 400KHZ 8SOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 128Kb (16K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

BU2394KN-E2

Rohm Semiconductor

IC CLOCK GENERATOR 3CH 20VQFN

• PLL: Yes
• Main Purpose: Digital Cameras
• Input: Crystal
• Output: Clock
• Number of Circuits: 1
• Ratio - Input:Output: 1:3
• Differential - Input:Output: No/No
• Frequency - Max: 135MHz
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -5°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: VQFN020V4040

패키지: 20-VFQFN Exposed Pad

BD37515FS-E2

Rohm Semiconductor

IC SOUND PROCESSOR 20SSOP

• Function: Audio Tone Processor
• Applications: Automotive Audio, Consumer Audio
• Number of Channels: 4
• Interface: I2C
• Voltage - Supply: 7 V ~ 9.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Specifications: -
• Package / Case: 20-SOP (0.213", 5.40mm Width)
• Supplier Device Package: 20-SSOPA

패키지: 20-SOP (0.213", 5.40mm Width)

SML012EC4TT86

Rohm Semiconductor

LED GREEN CLEAR 1208 SMD

• Color: Green
• Configuration: -
• Lens Color: Colorless
• Lens Transparency: Clear
• Millicandela Rating: 140mcd
• Lens Style/Size: Rectangle with Flat Top, 2.30mm x 1.60mm
• Voltage - Forward (Vf) (Typ): 3.2V
• Current - Test: 20mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: -
• Wavelength - Peak: 523nm
• Features: -
• Package / Case: 1208 (3020 Metric)
• Supplier Device Package: 3020(1208)
• Size / Dimension: 3.00mm L x 2.00mm W
• Height (Max): 1.50mm

패키지: 1208 (3020 Metric)

MNR15E0RPJ202

Rohm Semiconductor

RES ARRAY 8 RES 2K OHM 1206

• Circuit Type: Bussed
• Resistance (Ohms): 2k
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 10
• Power Per Element: 31mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

패키지: 1206 (3216 Metric), Convex, Long Side Terminals

MNR18ERAPJ203

Rohm Semiconductor

RES ARRAY 8 RES 20K OHM 1606

• Circuit Type: Isolated
• Resistance (Ohms): 20k
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 16
• Power Per Element: 62.5mW
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1606, Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
• Height - Seated (Max): 0.020" (0.50mm)

패키지: 1606, Convex, Long Side Terminals

MCR50JZHFL1R80

Rohm Semiconductor

RES SMD 1.8 OHM 1% 1/2W 2010

• Resistance: 1.8 Ohms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2010 (5025 Metric)

MCR18EZHJSR075

Rohm Semiconductor

RES SMD 0.075 OHM 5% 1/4W 1206

• Resistance: 75 mOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: 200/ +800ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR10EZHJSR082

Rohm Semiconductor

RES SMD 0.082 OHM 5% 1/4W 0805

• Resistance: 82 mOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: 200/ +800ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR18EZHF4421

Rohm Semiconductor

RES SMD 4.42K OHM 1% 1/4W 1206

• Resistance: 4.42 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR03EZPFX39R0

Rohm Semiconductor

RES SMD 39 OHM 1% 1/10W 0603

• Resistance: 39 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR01MZPJ434

Rohm Semiconductor

RES SMD 430K OHM 5% 1/16W 0402

• Resistance: 430 kOhms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0402 (1005 Metric)

MCR03EZPFX2151

Rohm Semiconductor

RES SMD 2.15K OHM 1% 1/10W 0603

• Resistance: 2.15 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

TRR18EZPJ224

Rohm Semiconductor

RES SMD 220K OHM 5% 1/4W 1206

• Resistance: 220 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

TRR03EZPF8871

Rohm Semiconductor

RES SMD 8.87K OHM 1% 1/10W 0603

• Resistance: 8.87 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

TRR01MZPJ622

Rohm Semiconductor

RES SMD 6.2K OHM 5% 1/16W 0402

• Resistance: 6.2 kOhms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0402 (1005 Metric)

MCR18ERTF5362

Rohm Semiconductor

RES SMD 53.6K OHM 1% 1/4W 1206

• Resistance: 53.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR50JZHFLR560

Rohm Semiconductor

RES SMD 0.56 OHM 1% 1/2W 2010

• Resistance: 560 mOhms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2010 (5025 Metric)

BD9411F-E2

Rohm Semiconductor

1CH BOOST UP TYPE WHITE LED DRIV

• Type: -
• Topology: -
• Internal Switch(s): -
• Number of Outputs: -
• Voltage - Supply (Min): -
• Voltage - Supply (Max): -
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 18-SOIC (0.213", 5.40mm Width)
• Supplier Device Package: 18-SOP

패키지: 18-SOIC (0.213", 5.40mm Width)

DTC124XU3T106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

패키지: -

BV1LE250EFJ-CE2

Rohm Semiconductor

AUTOMOTIVE IPD, 1CH LOW SIDE SWI

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: Logic
• Voltage - Load: 3V ~ 5.5V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 250mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: 8-HTSOP-J

패키지: -

RBR10RSM40BTL1

Rohm Semiconductor

DIODE SCHOTTKY 40V 10A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 540 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A
• Operating Temperature - Junction: 150°C

패키지: -

YQ30NL10SETL

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 30A,

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263L
• Operating Temperature - Junction: 150°C

패키지: -

SCT3022KLGC11

Rohm Semiconductor

SICFET N-CH 1200V 95A TO247N

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
• Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
• Vgs (Max): +22V, -4V
• FET Feature: -
• Power Dissipation (Max): 427W
• Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247N
• Package / Case: TO-247-3

패키지: -