Rohm Semiconductor 제품

RK3055ETL

Rohm Semiconductor

MOSFET N-CH 60V 8A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 20W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: CPT3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

DTC023EMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 50V VMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 2.2k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

패키지: SOT-723

EDZTE619.1B

Rohm Semiconductor

DIODE ZENER 9.1V 150MW EMD2

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±2%
• Power - Max: 150mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: EMD2

패키지: SC-79, SOD-523

BD5251G-TR

Rohm Semiconductor

IC DETECTOR VOLT 5.1V ODRN 5SSOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 5.1V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

패키지: SC-74A, SOT-753

BU4228F-TR

Rohm Semiconductor

IC DETECTOR VOLT 2.8V ODRN 4SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: Adjustable/Selectable
• Voltage - Threshold: 2.8V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-82
• Supplier Device Package: 4-SOP

패키지: SC-82

BU2092FV-E2

Rohm Semiconductor

IC DRVR SER/PAR I/O 12B SSOP-B20

• Type: Driver
• Protocol: -
• Number of Drivers/Receivers: 12/0
• Duplex: -
• Receiver Hysteresis: -
• Data Rate: -
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -25°C ~ 75°C
• Mounting Type: Surface Mount
• Package / Case: 20-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-SSOP-B

패키지: 20-LSSOP (0.173", 4.40mm Width)

SML-P11VTT86

Rohm Semiconductor

LED RED CLEAR 0402 SMD

• Color: Red
• Configuration: -
• Lens Color: Colorless
• Lens Transparency: Clear
• Millicandela Rating: 4mcd
• Lens Style/Size: Square with Flat Top, 0.60mm
• Voltage - Forward (Vf) (Typ): 1.8V
• Current - Test: 1mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 626nm
• Wavelength - Peak: -
• Features: -
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: 1006 (0402)
• Size / Dimension: 1.00mm L x 0.60mm W
• Height (Max): 0.25mm

패키지: 2-SMD, No Lead

MNR18ERAPJ470

Rohm Semiconductor

RES ARRAY 8 RES 47 OHM 1606

• Circuit Type: Isolated
• Resistance (Ohms): 47
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 16
• Power Per Element: 62.5mW
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 1606, Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.157" L x 0.063" W (4.00mm x 1.60mm)
• Height - Seated (Max): 0.020" (0.50mm)

패키지: 1606, Convex, Long Side Terminals

MCR10EZHF34R8

Rohm Semiconductor

RES SMD 34.8 OHM 1% 1/8W 0805

• Resistance: 34.8 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR03EZPJ620

Rohm Semiconductor

RES SMD 62 OHM 5% 1/10W 0603

• Resistance: 62 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

TRR18EZPJ201

Rohm Semiconductor

RES SMD 200 OHM 5% 1/4W 1206

• Resistance: 200 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

ESR10EZPF8872

Rohm Semiconductor

RES SMD 88.7K OHM 1% 0.4W 0805

• Resistance: 88.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

ESR10EZPF3002

Rohm Semiconductor

RES SMD 30K OHM 1% 0.4W 0805

• Resistance: 30 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

ESR10EZPF1330

Rohm Semiconductor

RES SMD 133 OHM 1% 0.4W 0805

• Resistance: 133 Ohms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

LTR18EZPJ430

Rohm Semiconductor

RES SMD 43 OHM 3/4W 1206 WIDE

• Resistance: 43 Ohms
• Tolerance: ±5%
• Power (Watts): 0.75W, 3/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 1206 (3216 Metric), 0612
• Supplier Device Package: 0612 (1632 Metric)
• Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: Wide 1206 (3216 Metric), 0612

KTR03EZPF10R0

Rohm Semiconductor

RES SMD 10 OHM 1% 1/10W 0603

• Resistance: 10 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR25JZHJ243

Rohm Semiconductor

RES SMD 24K OHM 5% 1/4W 1210

• Resistance: 24 kOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

MCR50JZHJ304

Rohm Semiconductor

RES SMD 300K OHM 5% 1/2W 2010

• Resistance: 300 kOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 2010 (5025 Metric)
• Supplier Device Package: 2010
• Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2010 (5025 Metric)

ESR18EZPJ1R2

Rohm Semiconductor

RES SMD 1.2 OHM 5% 1/3W 1206

• Resistance: 1.2 Ohms
• Tolerance: ±5%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR03ERTJ622

Rohm Semiconductor

RES SMD 6.2K OHM 5% 1/10W 0603

• Resistance: 6.2 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

LTR10EVHFL3R90

Rohm Semiconductor

RES SMD 3.9 OHM 1/2W 0805 WIDE

• Resistance: 3.9 Ohms
• Tolerance: ±1%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Current Sense
• Temperature Coefficient: ±150ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 0805 (2012 Metric), 0508
• Supplier Device Package: 0805
• Size / Dimension: 0.047" L x 0.079" W (1.20mm x 2.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: Wide 0805 (2012 Metric), 0508

BD81010MUV-E2

Rohm Semiconductor

HIGH PRECISION GAMMA CORRECTION

• Type: Gamma Correction Reference
• Applications: TFT-LCD Monitors
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: VQFN032V5050

패키지: 32-VFQFN Exposed Pad

DTC123YMT2L

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A VMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 10 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

패키지: -

DTA114TMFHAT2L

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A VMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 10 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

패키지: -

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R6020JNJGTL

Rohm Semiconductor

MOSFET N-CH 600V 20A LPTS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 7V @ 3.5mA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 252W (Tc)
• Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LPTS
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

RX3L18BBGC16

Rohm Semiconductor

NCH 60V 180A, TO-220AB, POWER MO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 192W (Tc)
• Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

패키지: -

YQ12RSM10SDTFTL1

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 12A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 670 mV @ 12 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 90 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A
• Operating Temperature - Junction: 175°C

패키지: -

RB168MM-60TFTR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDU

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 680 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.5 µA @ 60 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU
• Operating Temperature - Junction: 150°C (Max)

패키지: -