Rohm Semiconductor 제품

RU1E002SPTCL

Rohm Semiconductor

MOSFET P-CH 30V 0.25A UMT3F

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 250mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UMT3F
• Package / Case: SC-85

패키지: SC-85

SH8M4TB1

Rohm Semiconductor

MOSFET N/P-CH 30V 9A/7A 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9A, 7A
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 9A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

2SD2114KT146W

Rohm Semiconductor

TRANS NPN 20V 0.5A SOT-346

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 3V
• Power - Max: 200mW
• Frequency - Transition: 350MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

DTD113ZUT106

Rohm Semiconductor

TRANS PREBIAS NPN 200MW UMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 1k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

패키지: SC-70, SOT-323

BD2066FJ-LBE2

Rohm Semiconductor

IC SWITCH USB HI SIDE 2CH SOP8J

• Switch Type: USB Switch
• Number of Outputs: 2
• Ratio - Input:Output: 1:2
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.5A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: Slew Rate Controlled, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, Reverse Current, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

MNR04M0APJ272

Rohm Semiconductor

RES ARRAY 4 RES 2.7K OHM 0804

• Circuit Type: Isolated
• Resistance (Ohms): 2.7k
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 0804, Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.079" L x 0.039" W (2.00mm x 1.00mm)
• Height - Seated (Max): 0.018" (0.45mm)

패키지: 0804, Convex, Long Side Terminals

MNR18E0APJ430

Rohm Semiconductor

RES ARRAY 8 RES 43 OHM 1506

• Circuit Type: Isolated
• Resistance (Ohms): 43
• Tolerance: ±5%
• Number of Resistors: 8
• Number of Pins: 16
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 1506, Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.150" L x 0.063" W (3.80mm x 1.60mm)
• Height - Seated (Max): 0.022" (0.55mm)

패키지: 1506, Convex, Long Side Terminals

MCR10EZPF1502

Rohm Semiconductor

RES SMD 15K OHM 1% 1/8W 0805

• Resistance: 15 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR18EZHF15R0

Rohm Semiconductor

RES SMD 15 OHM 1% 1/4W 1206

• Resistance: 15 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR03EZPJ1R5

Rohm Semiconductor

RES SMD 1.5 OHM 5% 1/10W 0603

• Resistance: 1.5 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±400ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

ESR10EZPF2152

Rohm Semiconductor

RES SMD 21.5K OHM 1% 0.4W 0805

• Resistance: 21.5 kOhms
• Tolerance: ±1%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

TRR03EZPJ8R2

Rohm Semiconductor

RES SMD 8.2 OHM 5% 1/10W 0603

• Resistance: 8.2 Ohms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±400ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

ESR03EZPJ331

Rohm Semiconductor

RES SMD 330 OHM 5% 1/4W 0603

• Resistance: 330 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR10ERTF2262

Rohm Semiconductor

RES SMD 22.6K OHM 1% 1/8W 0805

• Resistance: 22.6 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR18ERTJ395

Rohm Semiconductor

RES SMD 3.9M OHM 5% 1/4W 1206

• Resistance: 3.9 MOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR10ERTF3742

Rohm Semiconductor

RES SMD 37.4K OHM 1% 1/8W 0805

• Resistance: 37.4 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR100JZHJ432

Rohm Semiconductor

RES SMD 4.3K OHM 5% 1W 2512

• Resistance: 4.3 kOhms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 2512 (6432 Metric)

ESR01MZPJ330

Rohm Semiconductor

RES SMD 33 OHM 5% 1/5W 0402

• Resistance: 33 Ohms
• Tolerance: ±5%
• Power (Watts): 0.2W, 1/5W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0402 (1005 Metric)

ESR25JZPJ684

Rohm Semiconductor

RES SMD 680K OHM 5% 1/2W 1210

• Resistance: 680 kOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

BR93G46FVT-3GE2

Rohm Semiconductor

MICROWIRE BUS 1KBIT(64X16BIT) EE

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 1Kb (64 x 16)
• Memory Interface: SPI
• Clock Frequency: 3MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 8-TSSOP-B

패키지: 8-TSSOP (0.173", 4.40mm Width)

R5205PND3FRATL

Rohm Semiconductor

525V 5A TO-252, AUTOMOTIVE POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 525 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 65W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

DTA114YE3TL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A EMT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 100 kOhms
• Resistor - Emitter Base (R2) (Ohms): 100 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

패키지: -

EDZ9HKTE615-6B

Rohm Semiconductor

DIODE ZENER EMD2

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: 100 mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: EMD2

패키지: -

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ML62Q1729-NNNGAZ0AX

Rohm Semiconductor

IC MCU 16BIT 512KB FLASH 64QFP

• Core Processor: nX-U16/100
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: I2C, SSP, UART/USART
• Peripherals: POR, LCD, LED, PWM, WDT
• Number of I/O: 53
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 8K x 8
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.6V ~ 5.5V
• Data Converters: A/D 12x10b SAR; D/A 1x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: 64-QFP (14x14)

패키지: -

BSS63AT116

Rohm Semiconductor

TRANS PNP 100V 0.1A SST3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 100 V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
• Power - Max: 200 mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SST3

패키지: -

RGT16NS65DGC9

Rohm Semiconductor

IGBT TRENCH FIELD 650V 16A TO262

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 16 A
• Current - Collector Pulsed (Icm): 24 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
• Power - Max: 94 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: 13ns/33ns
• Test Condition: 400V, 8A, 10Ohm, 15V
• Reverse Recovery Time (trr): 42 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
• Supplier Device Package: TO-262

패키지: -

RN142SFHTE61

Rohm Semiconductor

RF DIODE PIN SMD

• Diode Type: -
• Voltage - Peak Reverse (Max): -
• Current - Max: -
• Capacitance @ Vr, F: -
• Resistance @ If, F: -
• Power Dissipation (Max): -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

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RB085T-40HZC9

Rohm Semiconductor

DIODE ARR SCHOTT 40V 10A TO220FN

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 12.3 ns
• Current - Reverse Leakage @ Vr: 200 µA @ 40 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FN

패키지: -