페이지 750 - Rohm Semiconductor 제품

부품 번호	제조업체	설명	패키지	재고
SP8M3FU6TB	Rohm Semiconductor	MOSFET N/P-CH 30V 5A/4.5A 8SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Power - Max: 2W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,864
2SC4115STPQ	Rohm Semiconductor	TRANS NPN 20V 2A 3-PIN SPT Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V Power - Max: 400mW Frequency - Transition: 290MHz Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: SC-72 Formed Leads Supplier Device Package: SPT	패키지: SC-72 Formed Leads	재고3,744
2SD2142KT146	Rohm Semiconductor	TRANS NPN DARL 30V 0.3A SOT23-3 Transistor Type: NPN - Darlington Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Power - Max: 200mW Frequency - Transition: 200MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SMT3	패키지: TO-236-3, SC-59, SOT-23-3	재고2,410,896
DTA023JEBTL	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.15W SC89 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Supplier Device Package: EMT3F (SOT-416FL)	패키지: SC-89, SOT-490	재고104,988
RLZTE-1110A	Rohm Semiconductor	DIODE ZENER 9.7V 500MW LLDS Voltage - Zener (Nom) (Vz): 9.7V Tolerance: ±3% Power - Max: 500mW Impedance (Max) (Zzt): 8 Ohms Current - Reverse Leakage @ Vr: 200nA @ 7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: LLDS	패키지: DO-213AC, MINI-MELF, SOD-80	재고240,000
MTZJT-777.5C	Rohm Semiconductor	DIODE ZENER 7.5V 500MW MSD Voltage - Zener (Nom) (Vz): 7.5V Tolerance: ±3% Power - Max: 500mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 500nA @ 4V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: - Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: MSD	패키지: DO-204AG, DO-34, Axial	재고7,472
BU30UA3WNVX-TL	Rohm Semiconductor	IC REG LIN 3V 300MA SSON004X1010 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Voltage - Output (Max): - Voltage Dropout (Max): 0.22V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 90µA PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 4-UDFN Exposed Pad Supplier Device Package: SSON004X1010	패키지: 4-UDFN Exposed Pad	재고5,840
BU4837FVE-TR	Rohm Semiconductor	IC VOLT DETECTOR STD 5-VSOF Type: Simple Reset/Power-On Reset Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: Active High/Active Low Reset Timeout: - Voltage - Threshold: 3.7V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: 5-VSOF	패키지: SOT-665	재고4,176
MCR18ERTF3242	Rohm Semiconductor	RES SMD 32.4K OHM 1% 1/4W 1206 Resistance: 32.4 kOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고4,482
MCR25JZHF1543	Rohm Semiconductor	RES SMD 154K OHM 1% 1/4W 1210 Resistance: 154 kOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1210 (3225 Metric) Supplier Device Package: 1210 Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.028" (0.70mm) Number of Terminations: 2 Failure Rate: -	패키지: 1210 (3225 Metric)	재고5,022
MCR50JZHJLR39	Rohm Semiconductor	RES SMD 0.39 OHM 5% 1/2W 2010 Resistance: 390 mOhms Tolerance: ±5% Power (Watts): 0.5W, 1/2W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±250ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 2010 (5025 Metric) Supplier Device Package: 2010 Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm) Height - Seated (Max): 0.028" (0.70mm) Number of Terminations: 2 Failure Rate: -	패키지: 2010 (5025 Metric)	재고6,336
MCR18EZPF5230	Rohm Semiconductor	RES SMD 523 OHM 1% 1/4W 1206 Resistance: 523 Ohms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고3,582
LTR50UZPJ334	Rohm Semiconductor	RES SMD 330K OHM 1W 2010 WIDE Resistance: 330 kOhms Tolerance: ±5% Power (Watts): 1W Composition: Thick Film Features: Automotive AEC-Q200, Pulse Withstanding Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: Wide 2010 (5025 Metric), 1020 Supplier Device Package: 2010 Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: Wide 2010 (5025 Metric), 1020	재고8,136
KTR10EZPJ2R7	Rohm Semiconductor	RES SMD 2.7 OHM 5% 1/8W 0805 Resistance: 2.7 Ohms Tolerance: ±5% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고4,266
MCR25JZHJ162	Rohm Semiconductor	RES SMD 1.6K OHM 5% 1/4W 1210 Resistance: 1.6 kOhms Tolerance: ±5% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1210 (3225 Metric) Supplier Device Package: 1210 Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Height - Seated (Max): 0.028" (0.70mm) Number of Terminations: 2 Failure Rate: -	패키지: 1210 (3225 Metric)	재고7,704
MCR18ERTF9760	Rohm Semiconductor	RES SMD 976 OHM 1% 1/4W 1206 Resistance: 976 Ohms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고41,502
MCR18ERTF2154	Rohm Semiconductor	RES SMD 2.15M OHM 1% 1/4W 1206 Resistance: 2.15 MOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고38,340
MCR10ERTF3000	Rohm Semiconductor	RES SMD 300 OHM 1% 1/8W 0805 Resistance: 300 Ohms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고43,302
TRR03EZPF1210	Rohm Semiconductor	RES SMD 121 OHM 1% 1/10W 0603 Resistance: 121 Ohms Tolerance: ±1% Power (Watts): 0.1W, 1/10W Composition: Thick Film Features: Anti-Sulfur Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Height - Seated (Max): 0.022" (0.55mm) Number of Terminations: 2 Failure Rate: -	패키지: 0603 (1608 Metric)	재고52,674
BR93H56RFJ-WCE2	Rohm Semiconductor	EEPROMS MICROWIRE SERIAL BUS, HI Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: SPI Clock Frequency: 1.25MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	패키지: 8-SOIC (0.154", 3.90mm Width)	재고26,340
BD48L49G-TL	Rohm Semiconductor	STANDARD VOLTAGE DETECTORS Type: Voltage Detector Number of Voltages Monitored: 1 Output: Open Drain or Open Collector Reset: Active Low Reset Timeout: - Voltage - Threshold: 4.9V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: 3-SSOP	패키지: TO-236-3, SC-59, SOT-23-3	재고4,960
LM324F-E2	Rohm Semiconductor	IC OP AMP GRND SENSE SOP14 Amplifier Type: General Purpose Number of Circuits: 4 Output Type: - Slew Rate: 0.3V/µs Gain Bandwidth Product: 800kHz -3db Bandwidth: - Current - Input Bias: 20nA Voltage - Input Offset: 1mV Current - Supply: 1mA Current - Output / Channel: 30mA Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.173", 4.40mm Width) Supplier Device Package: 14-SOP	패키지: 14-SOIC (0.173", 4.40mm Width)	재고6,064
BA82903YFVM-CTR	Rohm Semiconductor	IC COMPARATOR 2 GEN PUR 8MSOP Type: General Purpose Number of Elements: 2 Output Type: Open-Collector Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V Current - Quiescent (Max): 1mA CMRR, PSRR (Typ): - Propagation Delay (Max): 400ns (Typ) Hysteresis: - Operating Temperature: -40°C ~ 125°C Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Supplier Device Package: 8-MSOP	패키지: -	재고6,891
DTA113ZMT2L	Rohm Semiconductor	TRANS PREBIAS PNP 50V 0.1A VMT3 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1) (Ohms): 1 kOhms Resistor - Emitter Base (R2) (Ohms): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VMT3	패키지: -	재고23,247
TLR376YG-CTR	Rohm Semiconductor	TLR SERIES, AUTOMOTIVE HIGH PREC Amplifier Type: CMOS Number of Circuits: 1 Output Type: Push-Pull, Rail-to-Rail Slew Rate: 2V/µs Gain Bandwidth Product: 4 MHz -3db Bandwidth: - Current - Input Bias: 0.5 pA Voltage - Input Offset: 1.7 µV Current - Supply: 645µA Current - Output / Channel: 50 mA Voltage - Supply, Single/Dual (±): - Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: 5-SSOP	패키지: -	재고8,682
RD3L07BBGTL1	Rohm Semiconductor	NCH 60V 115A, TO-252, POWER MOSF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고7,206
RD3H200SNTL1	Rohm Semiconductor	MOSFET N-CH 45V 20A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 45 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 20W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고8,853
SCT4062KWAHRTL	Rohm Semiconductor	1200V, 24A, 7-PIN SMD, TRENCH-ST FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 4.8V @ 6.45mA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V Vgs (Max): +21V, -4V FET Feature: - Power Dissipation (Max): 93W Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7LA Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	패키지: -	Request a Quote

SP8M3FU6TB

Rohm Semiconductor

MOSFET N/P-CH 30V 5A/4.5A 8SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Rds On (Max) @ Id, Vgs: 51 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Power - Max: 2W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,864

2SC4115STPQ

Rohm Semiconductor

TRANS NPN 20V 2A 3-PIN SPT

Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
Power - Max: 400mW
Frequency - Transition: 290MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: SC-72 Formed Leads
Supplier Device Package: SPT

패키지: SC-72 Formed Leads

재고3,744

2SD2142KT146

Rohm Semiconductor

TRANS NPN DARL 30V 0.3A SOT23-3

Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 300mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Power - Max: 200mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SMT3

패키지: TO-236-3, SC-59, SOT-23-3

재고2,410,896

DTA023JEBTL

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.15W SC89

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Supplier Device Package: EMT3F (SOT-416FL)

패키지: SC-89, SOT-490

재고104,988

RLZTE-1110A

Rohm Semiconductor

DIODE ZENER 9.7V 500MW LLDS

Voltage - Zener (Nom) (Vz): 9.7V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 7V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS

패키지: DO-213AC, MINI-MELF, SOD-80

재고240,000

MTZJT-777.5C

Rohm Semiconductor

DIODE ZENER 7.5V 500MW MSD

Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 20 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 4V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: DO-204AG, DO-34, Axial
Supplier Device Package: MSD

패키지: DO-204AG, DO-34, Axial

재고7,472

BU30UA3WNVX-TL

Rohm Semiconductor

IC REG LIN 3V 300MA SSON004X1010

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Voltage - Output (Min/Fixed): 3V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.22V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 90µA
PSRR: 70dB (1kHz)
Control Features: Enable
Protection Features: Over Current, Over Temperature
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 4-UDFN Exposed Pad
Supplier Device Package: SSON004X1010

패키지: 4-UDFN Exposed Pad

재고5,840

BU4837FVE-TR

Rohm Semiconductor

IC VOLT DETECTOR STD 5-VSOF

Type: Simple Reset/Power-On Reset
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: Active High/Active Low
Reset Timeout: -
Voltage - Threshold: 3.7V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: 5-VSOF

패키지: SOT-665

재고4,176

MCR18ERTF3242

Rohm Semiconductor

RES SMD 32.4K OHM 1% 1/4W 1206

Resistance: 32.4 kOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고4,482

MCR25JZHF1543

Rohm Semiconductor

RES SMD 154K OHM 1% 1/4W 1210

Resistance: 154 kOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1210 (3225 Metric)
Supplier Device Package: 1210
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.028" (0.70mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1210 (3225 Metric)

재고5,022

MCR50JZHJLR39

Rohm Semiconductor

RES SMD 0.39 OHM 5% 1/2W 2010

Resistance: 390 mOhms
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±250ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 2010 (5025 Metric)
Supplier Device Package: 2010
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Height - Seated (Max): 0.028" (0.70mm)
Number of Terminations: 2
Failure Rate: -

패키지: 2010 (5025 Metric)

재고6,336

MCR18EZPF5230

Rohm Semiconductor

RES SMD 523 OHM 1% 1/4W 1206

Resistance: 523 Ohms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고3,582

LTR50UZPJ334

Rohm Semiconductor

RES SMD 330K OHM 1W 2010 WIDE

Resistance: 330 kOhms
Tolerance: ±5%
Power (Watts): 1W
Composition: Thick Film
Features: Automotive AEC-Q200, Pulse Withstanding
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: Wide 2010 (5025 Metric), 1020
Supplier Device Package: 2010
Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: Wide 2010 (5025 Metric), 1020

재고8,136

KTR10EZPJ2R7

Rohm Semiconductor

RES SMD 2.7 OHM 5% 1/8W 0805

Resistance: 2.7 Ohms
Tolerance: ±5%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고4,266

MCR25JZHJ162

Rohm Semiconductor

RES SMD 1.6K OHM 5% 1/4W 1210

Resistance: 1.6 kOhms
Tolerance: ±5%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1210 (3225 Metric)
Supplier Device Package: 1210
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Height - Seated (Max): 0.028" (0.70mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1210 (3225 Metric)

재고7,704

MCR18ERTF9760

Rohm Semiconductor

RES SMD 976 OHM 1% 1/4W 1206

Resistance: 976 Ohms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고41,502

MCR18ERTF2154

Rohm Semiconductor

RES SMD 2.15M OHM 1% 1/4W 1206

Resistance: 2.15 MOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고38,340

MCR10ERTF3000

Rohm Semiconductor

RES SMD 300 OHM 1% 1/8W 0805

Resistance: 300 Ohms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고43,302

TRR03EZPF1210

Rohm Semiconductor

RES SMD 121 OHM 1% 1/10W 0603

Resistance: 121 Ohms
Tolerance: ±1%
Power (Watts): 0.1W, 1/10W
Composition: Thick Film
Features: Anti-Sulfur
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Height - Seated (Max): 0.022" (0.55mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0603 (1608 Metric)

재고52,674

BR93H56RFJ-WCE2

Rohm Semiconductor

EEPROMS MICROWIRE SERIAL BUS, HI

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: SPI
Clock Frequency: 1.25MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

재고26,340

BD48L49G-TL

Rohm Semiconductor

STANDARD VOLTAGE DETECTORS

Type: Voltage Detector
Number of Voltages Monitored: 1
Output: Open Drain or Open Collector
Reset: Active Low
Reset Timeout: -
Voltage - Threshold: 4.9V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: 3-SSOP

패키지: TO-236-3, SC-59, SOT-23-3

재고4,960

LM324F-E2

Rohm Semiconductor

IC OP AMP GRND SENSE SOP14

Amplifier Type: General Purpose
Number of Circuits: 4
Output Type: -
Slew Rate: 0.3V/µs
Gain Bandwidth Product: 800kHz
-3db Bandwidth: -
Current - Input Bias: 20nA
Voltage - Input Offset: 1mV
Current - Supply: 1mA
Current - Output / Channel: 30mA
Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 14-SOP

패키지: 14-SOIC (0.173", 4.40mm Width)

재고6,064

BA82903YFVM-CTR

Rohm Semiconductor

IC COMPARATOR 2 GEN PUR 8MSOP

Type: General Purpose
Number of Elements: 2
Output Type: Open-Collector
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Current - Quiescent (Max): 1mA
CMRR, PSRR (Typ): -
Propagation Delay (Max): 400ns (Typ)
Hysteresis: -
Operating Temperature: -40°C ~ 125°C
Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-MSOP

패키지: -

재고6,891

DTA113ZMT2L

Rohm Semiconductor

TRANS PREBIAS PNP 50V 0.1A VMT3

Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1) (Ohms): 1 kOhms
Resistor - Emitter Base (R2) (Ohms): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Mounting Type: Surface Mount
Package / Case: SOT-723
Supplier Device Package: VMT3

패키지: -

재고23,247

TLR376YG-CTR

Rohm Semiconductor

TLR SERIES, AUTOMOTIVE HIGH PREC

Amplifier Type: CMOS
Number of Circuits: 1
Output Type: Push-Pull, Rail-to-Rail
Slew Rate: 2V/µs
Gain Bandwidth Product: 4 MHz
-3db Bandwidth: -
Current - Input Bias: 0.5 pA
Voltage - Input Offset: 1.7 µV
Current - Supply: 645µA
Current - Output / Channel: 50 mA
Voltage - Supply, Single/Dual (±): -
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: 5-SSOP

패키지: -

재고8,682

RD3L07BBGTL1

Rohm Semiconductor

NCH 60V 115A, TO-252, POWER MOSF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 102W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 70A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고7,206

RD3H200SNTL1

Rohm Semiconductor

MOSFET N-CH 45V 20A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 45 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고8,853

SCT4062KWAHRTL

Rohm Semiconductor

1200V, 24A, 7-PIN SMD, TRENCH-ST

FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 4.8V @ 6.45mA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1498 pF @ 800 V
Vgs (Max): +21V, -4V
FET Feature: -
Power Dissipation (Max): 93W
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-7LA
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

패키지: -

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