Rohm Semiconductor 제품

TCFGB0G227M8R

Rohm Semiconductor

CAP TANT 220UF 4V 20% 1411

• Capacitance: 220µF
• Tolerance: ±20%
• Voltage - Rated: 4V
• Type: Molded
• ESR (Equivalent Series Resistance): -
• Operating Temperature: -55°C ~ 125°C
• Lifetime @ Temp.: -
• Mounting Type: Surface Mount
• Package / Case: 1411 (3528 Metric)
• Size / Dimension: 0.138" L x 0.110" W (3.50mm x 2.80mm)
• Height - Seated (Max): 0.083" (2.10mm)
• Lead Spacing: -
• Manufacturer Size Code: B
• Features: Fail Safe with Built-in Fuse
• Failure Rate: -

패키지: 1411 (3528 Metric)

RW1C020UNT2R

Rohm Semiconductor

MOSFET N-CH 20V 2A WEMT6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 400mW (Ta)
• Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-WEMT
• Package / Case: SOT-563, SOT-666

패키지: SOT-563, SOT-666

RQ1C065UNTR

Rohm Semiconductor

MOSFET N-CH 20V 6.5A TSMT8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSMT8
• Package / Case: 8-SMD, Flat Lead

패키지: 8-SMD, Flat Lead

CDZT2R13B

Rohm Semiconductor

DIODE ZENER 13V 100MW VMN2

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: ±2%
• Power - Max: 100mW
• Impedance (Max) (Zzt): 37 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Supplier Device Package: VMN2

패키지: SOD-923

RB160M-60TR

Rohm Semiconductor

DIODE SCHOTTKY 60V 1A PMDU

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 60V
• Capacitance @ Vr, F: 40pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU
• Operating Temperature - Junction: 150°C (Max)

패키지: SOD-123F

BD4719G-TR

Rohm Semiconductor

IC RESET CPU BIPOLAR 1.9V 5SSOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 1.9V
• Operating Temperature: -40°C ~ 75°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: 5-SSOP

패키지: SC-74A, SOT-753

BU4932F-TR

Rohm Semiconductor

IC VOLT DETECTOR STD 4-SOP

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active High/Active Low
• Reset Timeout: -
• Voltage - Threshold: 3.2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 4-TSOP (0.049", 1.25mm Width)
• Supplier Device Package: 4-SOP

패키지: 4-TSOP (0.049", 1.25mm Width)

BR24T08FVM-WTR

Rohm Semiconductor

IC EEPROM 8KBIT 400KHZ 8MSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 8Kb (1K x 8)
• Memory Interface: I2C
• Clock Frequency: 400kHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-MSOP

패키지: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

BR24G16NUX-3ATTR

Rohm Semiconductor

IC EEPROM 16KBIT 1MHZ 8VSON

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: I2C
• Clock Frequency: 1MHz
• Write Cycle Time - Word, Page: 5ms
• Access Time: -
• Voltage - Supply: 1.6 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UFDFN Exposed Pad
• Supplier Device Package: VSON008X2030

패키지: 8-UFDFN Exposed Pad

MNR12E0ABJ103

Rohm Semiconductor

RES ARRAY 2 RES 10K OHM 0606

• Circuit Type: Isolated
• Resistance (Ohms): 10k
• Tolerance: ±5%
• Number of Resistors: 2
• Number of Pins: 4
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 0606, Convex
• Supplier Device Package: -
• Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

패키지: 0606, Convex

MCR10EZPF1022

Rohm Semiconductor

RES SMD 10.2K OHM 1% 1/8W 0805

• Resistance: 10.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR10EZHFLR180

Rohm Semiconductor

RES SMD 0.18 OHM 1% 1/4W 0805

• Resistance: 180 mOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR18EZHF5763

Rohm Semiconductor

RES SMD 576K OHM 1% 1/4W 1206

• Resistance: 576 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR18EZHF33R2

Rohm Semiconductor

RES SMD 33.2 OHM 1% 1/4W 1206

• Resistance: 33.2 Ohms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

KTR18EZPJ361

Rohm Semiconductor

RES SMD 360 OHM 5% 1/4W 1206

• Resistance: 360 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

TRR01MZPF3240

Rohm Semiconductor

RES SMD 324 OHM 1% 1/16W 0402

• Resistance: 324 Ohms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0402 (1005 Metric)

MCR25JZHF3921

Rohm Semiconductor

RES SMD 3.92K OHM 1% 1/4W 1210

• Resistance: 3.92 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

KTR25JZPF2204

Rohm Semiconductor

RES SMD 2.2M OHM 1% 1/3W 1210

• Resistance: 2.2 MOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

KTR18EZPF4642

Rohm Semiconductor

RES SMD 46.4K OHM 1% 1/4W 1206

• Resistance: 46.4 kOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR006YRTJ915

Rohm Semiconductor

RES SMD 9.1M OHM 5% 1/20W 0201

• Resistance: 9.1 MOhms
• Tolerance: ±5%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0201 (0603 Metric)

KTR25JZPF3303

Rohm Semiconductor

RES SMD 330K OHM 1% 1/3W 1210

• Resistance: 330 kOhms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

BD34705KS2

Rohm Semiconductor

7.1CH SOUND PROCESSOR WITH BUILT

• Function: Audio Signal Processor
• Applications: Consumer Audio
• Number of Channels: 8
• Interface: Serial
• Voltage - Supply: ±6.5 V ~ 7.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Specifications: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-SQFP

패키지: 64-LQFP

RB510SM-40T2R

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA EMD2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: EMD2
• Operating Temperature - Junction: 150°C (Max)

패키지: -

PTZTFTE2512B

Rohm Semiconductor

DIODE ZENER 12.75V 1W PMDS

• Voltage - Zener (Nom) (Vz): 12.75 V
• Tolerance: -
• Power - Max: 1 W
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 9 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: PMDS

패키지: -

RBQ15BGE10ATL

Rohm Semiconductor

DIODE ARR SCHOT 100V 15A TO252GE

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 710 mV @ 7.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 140 µA @ 100 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252GE

패키지: -

LM393FV-E2

Rohm Semiconductor

IC COMPARATOR 2 GEN PUR 8SSOP

• Type: General Purpose
• Number of Elements: 2
• Output Type: Open-Collector
• Voltage - Supply, Single/Dual (±): 3V ~ 32V, ±1.5V ~ 16V
• Voltage - Input Offset (Max): 4.5mV @ 1.4V
• Current - Input Bias (Max): 0.05µA @ 1.4V
• Current - Output (Typ): 16mA @ 5V
• Current - Quiescent (Max): 1mA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): -
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-LSSOP (0.173", 4.40mm Width)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SSOP-B

패키지: -

BD3537F-E2

Rohm Semiconductor

IC REG TERM DDR-II 2CH 8-SOP

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

Request a Quote

DTC115GU3T106

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A UMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): -
• Resistor - Emitter Base (R2) (Ohms): 100 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 200 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: UMT3

패키지: -