Rohm Semiconductor 제품

TCA1D105M8R

Rohm Semiconductor

CAP TANT 1UF 20V 20% 1206

• Capacitance: 1µF
• Tolerance: ±20%
• Voltage - Rated: 20V
• Type: Molded
• ESR (Equivalent Series Resistance): -
• Operating Temperature: -55°C ~ 125°C
• Lifetime @ Temp.: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric)
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.071" (1.80mm)
• Lead Spacing: -
• Manufacturer Size Code: A
• Features: General Purpose
• Failure Rate: -

패키지: 1206 (3216 Metric)

RSF010P03TL

Rohm Semiconductor

MOSFET P-CH 30V 1A TUMT3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 800mW (Ta)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 1A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TUMT3
• Package / Case: 3-SMD, Flat Leads

패키지: 3-SMD, Flat Leads

SP8M8TB

Rohm Semiconductor

MOSFET N/P-CH 30V 6A/4.5A 8SOIC

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A, 4.5A
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
• Power - Max: 2W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: 8-SOIC (0.154", 3.90mm Width)

RB051M-2YTR

Rohm Semiconductor

DIODE SCHOTTKY 20V 3A PMDU

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 460mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 900µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU
• Operating Temperature - Junction: 125°C (Max)

패키지: SOD-123F

RBR1LAM40ATR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDTM

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: PMDTM
• Operating Temperature - Junction: 150°C (Max)

패키지: SOD-128

BD4842FVE-TR

Rohm Semiconductor

IC DETECTOR VOLT 4.2V ODRN 5VSOF

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: -
• Voltage - Threshold: 4.2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-665
• Supplier Device Package: 5-VSOF

패키지: SOT-665

SML-211UTT86

Rohm Semiconductor

LED RED CLEAR 0805 SMD

• Color: Red
• Configuration: -
• Lens Color: Colorless
• Lens Transparency: Clear
• Millicandela Rating: 2.5mcd
• Lens Style/Size: Rectangle with Flat Top, 1.40mm x 1.25mm
• Voltage - Forward (Vf) (Typ): 1.8V
• Current - Test: 2mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 620nm
• Wavelength - Peak: -
• Features: -
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 2012(0805)
• Size / Dimension: 2.00mm L x 1.25mm W
• Height (Max): 0.90mm

패키지: 0805 (2012 Metric)

MNR14E0APJ513

Rohm Semiconductor

RES ARRAY 4 RES 51K OHM 1206

• Circuit Type: Isolated
• Resistance (Ohms): 51k
• Tolerance: ±5%
• Number of Resistors: 4
• Number of Pins: 8
• Power Per Element: 62.5mW
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Applications: Automotive AEC-Q200
• Mounting Type: Surface Mount
• Package / Case: 1206 (3216 Metric), Convex, Long Side Terminals
• Supplier Device Package: -
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.024" (0.60mm)

패키지: 1206 (3216 Metric), Convex, Long Side Terminals

MCR18EZHFLR110

Rohm Semiconductor

RES SMD 0.11 OHM 1% 1/4W 1206

• Resistance: 110 mOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: 200/ +600ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

MCR10EZHF7322

Rohm Semiconductor

RES SMD 73.2K OHM 1% 1/8W 0805

• Resistance: 73.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR03EZPFX1201

Rohm Semiconductor

RES SMD 1.2K OHM 1% 1/10W 0603

• Resistance: 1.2 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR03EZPFX1200

Rohm Semiconductor

RES SMD 120 OHM 1% 1/10W 0603

• Resistance: 120 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0603 (1608 Metric)

MCR25JZHF1004

Rohm Semiconductor

RES SMD 1M OHM 1% 1/4W 1210

• Resistance: 1 MOhms
• Tolerance: ±1%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

LTR50UZPJ2R0

Rohm Semiconductor

RES SMD 2 OHM 1W 2010 WIDE

• Resistance: 2 Ohms
• Tolerance: ±5%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 2010 (5025 Metric), 1020
• Supplier Device Package: 2010
• Size / Dimension: 0.098" L x 0.197" W (2.50mm x 5.00mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: Wide 2010 (5025 Metric), 1020

ESR25JZPJ435

Rohm Semiconductor

RES SMD 4.3M OHM 5% 1/2W 1210

• Resistance: 4.3 MOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1210 (3225 Metric)

KTR18EZPJ220

Rohm Semiconductor

RES SMD 22 OHM 5% 1/4W 1206

• Resistance: 22 Ohms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 1206 (3216 Metric)

TRR01MZPF1331

Rohm Semiconductor

RES SMD 1.33K OHM 1% 1/16W 0402

• Resistance: 1.33 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0402 (1005 Metric)

ESR10EZPJ203

Rohm Semiconductor

RES SMD 20K OHM 5% 0.4W 0805

• Resistance: 20 kOhms
• Tolerance: ±5%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

MCR10ERTJ184

Rohm Semiconductor

RES SMD 180K OHM 5% 1/8W 0805

• Resistance: 180 kOhms
• Tolerance: ±5%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

KTR10EZPF2152

Rohm Semiconductor

RES SMD 21.5K OHM 1% 1/8W 0805

• Resistance: 21.5 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: 0805 (2012 Metric)

LTR18EZPF1200

Rohm Semiconductor

RES SMD 120 OHM 3/4W 1206 WIDE

• Resistance: 120 Ohms
• Tolerance: ±1%
• Power (Watts): 0.75W, 3/4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: Wide 1206 (3216 Metric), 0612
• Supplier Device Package: 0612 (1632 Metric)
• Size / Dimension: 0.063" L x 0.126" W (1.60mm x 3.20mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

패키지: Wide 1206 (3216 Metric), 0612

BU45K402G-TL

Rohm Semiconductor

VOLTAGE DETECTOR WITH FIXED DELA

• Type: Voltage Detector
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 120 ms Minimum
• Voltage - Threshold: 4V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: 3-SSOP

패키지: TO-236-3, SC-59, SOT-23-3

BA4558YFVM-MGTR

Rohm Semiconductor

AUTOMOTIVE LOW NOISE OPERATIONAL

• Amplifier Type: General Purpose
• Number of Circuits: 2
• Output Type: -
• Slew Rate: 1 V/µs
• Gain Bandwidth Product: 2MHz
• -3db Bandwidth: -
• Current - Input Bias: 60nA
• Voltage - Input Offset: 500µV
• Current - Supply: 3mA
• Current - Output / Channel: -
• Voltage - Supply, Single/Dual (±): 8 V ~ 30 V, ±4 V ~ 15 V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)
• Supplier Device Package: 8-MSOP

패키지: 8-VSSOP, 8-MSOP (0.110", 2.80mm Width)

BSS84WT106

Rohm Semiconductor

PCH -60V -0.21A, SOT-323, SMALL

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 34 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200mW (Ta)
• Rds On (Max) @ Id, Vgs: 5.3Ohm @ 210mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UMT3
• Package / Case: SC-70, SOT-323

패키지: -

UDZVFHTE-1711B

Rohm Semiconductor

DIODE ZENER 11V 200MW UMD2

• Voltage - Zener (Nom) (Vz): 11 V
• Tolerance: ±2.09%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 8 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2

패키지: -

SCT4036KRC15

Rohm Semiconductor

1200V, 36M, 4-PIN THD, TRENCH-ST

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 4.8V @ 11.1mA
• Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 2335 pF @ 800 V
• Vgs (Max): +21V, -4V
• FET Feature: -
• Power Dissipation (Max): 176W
• Rds On (Max) @ Id, Vgs: 47mOhm @ 21A, 18V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

패키지: -

KDZVTFTR33B

Rohm Semiconductor

DIODE ZENER 35V 1W PMDU

• Voltage - Zener (Nom) (Vz): 35 V
• Tolerance: ±6.06%
• Power - Max: 1 W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 10 µA @ 25 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: PMDU

패키지: -

RBQ10BM45AFHTL

Rohm Semiconductor

DIODE ARR SCHOTT 45V 10A TO252

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 µA @ 45 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252

패키지: -