페이지 91 - Rohm Semiconductor 제품

부품 번호	제조업체	설명	패키지	재고
ES6U41T2R	Rohm Semiconductor	MOSFET N-CH 30V 1.5A WEMT6 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V Vgs (Max): ±12V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-WEMT Package / Case: SOT-563, SOT-666	패키지: SOT-563, SOT-666	재고5,824
R6015ANZC8	Rohm Semiconductor	MOSFET N-CH 600V 15A TO3PF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PF Package / Case: TO-3P-3 Full Pack	패키지: TO-3P-3 Full Pack	재고8,532
SCT3030KLGC11	Rohm Semiconductor	MOSFET NCH 1.2KV 72A TO247N FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.6V @ 13.3mA Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V Vgs (Max): +22V, -4V FET Feature: - Power Dissipation (Max): 339W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247N Package / Case: TO-247-3	패키지: TO-247-3	재고15,876
EM6K33T2R	Rohm Semiconductor	MOSFET 2N-CH 50V 0.2A EMT6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate, 1.2V Drive Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Power - Max: 150mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	패키지: SOT-563, SOT-666	재고7,024
IMB10AT110	Rohm Semiconductor	TRANS PREBIAS DUAL PNP SMT6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	패키지: SC-74, SOT-457	재고648,000
BD9851EFV-E2	Rohm Semiconductor	IC REG CTRLR BUCK/BST 20HTSSOP-B Output Type: Transistor Driver Function: Step-Up, Step-Down Output Configuration: Positive or Negative Topology: Buck, Boost Number of Outputs: 2 Output Phases: 1 Voltage - Supply (Vcc/Vdd): 4 V ~ 18 V Frequency - Switching: 10kHz ~ 3MHz Duty Cycle (Max): - Synchronous Rectifier: No Clock Sync: No Serial Interfaces: - Control Features: Enable, Frequency Control, Soft Start Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 20-HTSSOP-B	패키지: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad	재고103,776
BR25H160FJ-WCE2	Rohm Semiconductor	IC EEPROM 16KBIT 10MHZ 8SOPJ Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,920
BD5413EFV-E2	Rohm Semiconductor	IC AMP AUDIO PWR 5W STER 24TSSOP Type: Class D Output Type: 2-Channel (Stereo) Max Output Power x Channels @ Load: 5W x 2 @ 6 Ohm Voltage - Supply: 6 V ~ 10.5 V Features: Depop, Short-Circuit and Thermal Protection, Shutdown Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 24-HTSSOP-B Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad	패키지: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad	재고23,940
BU3052FV-E2	Rohm Semiconductor	IC CLOCK GENERATOR SSOP Type: - PLL: - Input: - Output: - Number of Circuits: - Ratio - Input:Output: - Differential - Input:Output: - Frequency - Max: - Divider/Multiplier: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고123,144
MCR50JZHJ163	Rohm Semiconductor	RES SMD 16K OHM 5% 1/2W 2010 Resistance: 16 kOhms Tolerance: ±5% Power (Watts): 0.5W, 1/2W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 2010 (5025 Metric) Supplier Device Package: 2010 Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm) Height - Seated (Max): 0.028" (0.70mm) Number of Terminations: 2 Failure Rate: -	패키지: 2010 (5025 Metric)	재고6,192
MCR50JZHFLR390	Rohm Semiconductor	RES SMD 0.39 OHM 1% 1/2W 2010 Resistance: 390 mOhms Tolerance: ±1% Power (Watts): 0.5W, 1/2W Composition: Thick Film Features: Automotive AEC-Q200 Temperature Coefficient: ±250ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 2010 (5025 Metric) Supplier Device Package: 2010 Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm) Height - Seated (Max): 0.028" (0.70mm) Number of Terminations: 2 Failure Rate: -	패키지: 2010 (5025 Metric)	재고4,554
MCR006YZPF5601	Rohm Semiconductor	RES SMD 5.6K OHM 1% 1/20W 0201 Resistance: 5.6 kOhms Tolerance: ±1% Power (Watts): 0.05W, 1/20W Composition: Thick Film Features: - Temperature Coefficient: ±250ppm/°C Operating Temperature: -55°C ~ 125°C Package / Case: 0201 (0603 Metric) Supplier Device Package: 0201 Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm) Height - Seated (Max): 0.010" (0.26mm) Number of Terminations: 2 Failure Rate: -	패키지: 0201 (0603 Metric)	재고8,892
MCR006YZPF5101	Rohm Semiconductor	RES SMD 5.1K OHM 1% 1/20W 0201 Resistance: 5.1 kOhms Tolerance: ±1% Power (Watts): 0.05W, 1/20W Composition: Thick Film Features: - Temperature Coefficient: ±250ppm/°C Operating Temperature: -55°C ~ 125°C Package / Case: 0201 (0603 Metric) Supplier Device Package: 0201 Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm) Height - Seated (Max): 0.010" (0.26mm) Number of Terminations: 2 Failure Rate: -	패키지: 0201 (0603 Metric)	재고2,088
MCR10EZHF2203	Rohm Semiconductor	RES SMD 220K OHM 1% 1/8W 0805 Resistance: 220 kOhms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고6,516
KTR18EZPF27R4	Rohm Semiconductor	RES SMD 27.4 OHM 1% 1/4W 1206 Resistance: 27.4 Ohms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고2,502
KTR18EZPF18R2	Rohm Semiconductor	RES SMD 18.2 OHM 1% 1/4W 1206 Resistance: 18.2 Ohms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고7,236
TRR03EZPJ273	Rohm Semiconductor	RES SMD 27K OHM 5% 1/10W 0603 Resistance: 27 kOhms Tolerance: ±5% Power (Watts): 0.1W, 1/10W Composition: Thick Film Features: Anti-Sulfur Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0603 (1608 Metric) Supplier Device Package: 0603 Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm) Height - Seated (Max): 0.022" (0.55mm) Number of Terminations: 2 Failure Rate: -	패키지: 0603 (1608 Metric)	재고4,770
TRR01MZPJ2R2	Rohm Semiconductor	RES SMD 2.2 OHM 5% 1/16W 0402 Resistance: 2.2 Ohms Tolerance: ±5% Power (Watts): 0.063W, 1/16W Composition: Thick Film Features: Anti-Sulfur Temperature Coefficient: -250/ +500ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0402 (1005 Metric) Supplier Device Package: 0402 Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm) Height - Seated (Max): 0.016" (0.40mm) Number of Terminations: 2 Failure Rate: -	패키지: 0402 (1005 Metric)	재고2,034
MCR18ERTF8061	Rohm Semiconductor	RES SMD 8.06K OHM 1% 1/4W 1206 Resistance: 8.06 kOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고2,808
MCR10ERTF3601	Rohm Semiconductor	RES SMD 3.6K OHM 1% 1/8W 0805 Resistance: 3.6 kOhms Tolerance: ±1% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고8,280
MCR18ERTF3001	Rohm Semiconductor	RES SMD 3K OHM 1% 1/4W 1206 Resistance: 3 kOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: - Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고50,250
KTR18EZPF1623	Rohm Semiconductor	RES SMD 162K OHM 1% 1/4W 1206 Resistance: 162 kOhms Tolerance: ±1% Power (Watts): 0.25W, 1/4W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±100ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206 Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 1206 (3216 Metric)	재고43,656
KTR10EZPJ225	Rohm Semiconductor	RES SMD 2.2M OHM 5% 1/8W 0805 Resistance: 2.2 MOhms Tolerance: ±5% Power (Watts): 0.125W, 1/8W Composition: Thick Film Features: Automotive AEC-Q200, High Voltage Temperature Coefficient: ±200ppm/°C Operating Temperature: -55°C ~ 155°C Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805 Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Height - Seated (Max): 0.026" (0.65mm) Number of Terminations: 2 Failure Rate: -	패키지: 0805 (2012 Metric)	재고227,508
R6020KNXC7G	Rohm Semiconductor	600V 20A TO-220FM, HIGH-SPEED SW FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FM Package / Case: TO-220-3 Full Pack	패키지: -	재고2,319
KDZVTR47A	Rohm Semiconductor	DIODE ZENER 47V 1W PMDU Voltage - Zener (Nom) (Vz): 47 V Tolerance: ±6.38% Power - Max: 1 W Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 5 µA @ 36 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU	패키지: -	재고9,105
2SAR512PHZGT100	Rohm Semiconductor	TRANS PNP 30V 2A SOT89 Transistor Type: PNP Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Power - Max: 500 mW Frequency - Transition: 430MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: SOT-89	패키지: -	재고1,974
RB088BM150FNSTL	Rohm Semiconductor	DIODE ARR SCHOTT 150V 5A TO252 Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 5A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 150 V Operating Temperature - Junction: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252	패키지: -	재고7,500
BAW156HMT116	Rohm Semiconductor	DIODE ARRAY GP 80V 215MA SSD3 Diode Configuration: 1 Pair Common Anode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io) (per Diode): 215mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Current - Reverse Leakage @ Vr: 5 nA @ 75 V Operating Temperature - Junction: 150°C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SSD3	패키지: -	재고2,550

ES6U41T2R

Rohm Semiconductor

MOSFET N-CH 30V 1.5A WEMT6

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V
Vgs (Max): ±12V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-WEMT
Package / Case: SOT-563, SOT-666

패키지: SOT-563, SOT-666

재고5,824

R6015ANZC8

Rohm Semiconductor

MOSFET N-CH 600V 15A TO3PF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PF
Package / Case: TO-3P-3 Full Pack

패키지: TO-3P-3 Full Pack

재고8,532

SCT3030KLGC11

Rohm Semiconductor

MOSFET NCH 1.2KV 72A TO247N

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs: 131nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 2222pF @ 800V
Vgs (Max): +22V, -4V
FET Feature: -
Power Dissipation (Max): 339W (Tc)
Rds On (Max) @ Id, Vgs: 39 mOhm @ 27A, 18V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247N
Package / Case: TO-247-3

패키지: TO-247-3

재고15,876

EM6K33T2R

Rohm Semiconductor

MOSFET 2N-CH 50V 0.2A EMT6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Power - Max: 150mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

패키지: SOT-563, SOT-666

재고7,024

IMB10AT110

Rohm Semiconductor

TRANS PREBIAS DUAL PNP SMT6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6

패키지: SC-74, SOT-457

재고648,000

BD9851EFV-E2

Rohm Semiconductor

IC REG CTRLR BUCK/BST 20HTSSOP-B

Output Type: Transistor Driver
Function: Step-Up, Step-Down
Output Configuration: Positive or Negative
Topology: Buck, Boost
Number of Outputs: 2
Output Phases: 1
Voltage - Supply (Vcc/Vdd): 4 V ~ 18 V
Frequency - Switching: 10kHz ~ 3MHz
Duty Cycle (Max): -
Synchronous Rectifier: No
Clock Sync: No
Serial Interfaces: -
Control Features: Enable, Frequency Control, Soft Start
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Supplier Device Package: 20-HTSSOP-B

패키지: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad

재고103,776

BR25H160FJ-WCE2

Rohm Semiconductor

IC EEPROM 16KBIT 10MHZ 8SOPJ

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,920

BD5413EFV-E2

Rohm Semiconductor

IC AMP AUDIO PWR 5W STER 24TSSOP

Type: Class D
Output Type: 2-Channel (Stereo)
Max Output Power x Channels @ Load: 5W x 2 @ 6 Ohm
Voltage - Supply: 6 V ~ 10.5 V
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 24-HTSSOP-B
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad

패키지: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad

재고23,940

BU3052FV-E2

Rohm Semiconductor

IC CLOCK GENERATOR SSOP

Type: -
PLL: -
Input: -
Output: -
Number of Circuits: -
Ratio - Input:Output: -
Differential - Input:Output: -
Frequency - Max: -
Divider/Multiplier: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고123,144

MCR50JZHJ163

Rohm Semiconductor

RES SMD 16K OHM 5% 1/2W 2010

Resistance: 16 kOhms
Tolerance: ±5%
Power (Watts): 0.5W, 1/2W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 2010 (5025 Metric)
Supplier Device Package: 2010
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Height - Seated (Max): 0.028" (0.70mm)
Number of Terminations: 2
Failure Rate: -

패키지: 2010 (5025 Metric)

재고6,192

MCR50JZHFLR390

Rohm Semiconductor

RES SMD 0.39 OHM 1% 1/2W 2010

Resistance: 390 mOhms
Tolerance: ±1%
Power (Watts): 0.5W, 1/2W
Composition: Thick Film
Features: Automotive AEC-Q200
Temperature Coefficient: ±250ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 2010 (5025 Metric)
Supplier Device Package: 2010
Size / Dimension: 0.197" L x 0.098" W (5.00mm x 2.50mm)
Height - Seated (Max): 0.028" (0.70mm)
Number of Terminations: 2
Failure Rate: -

패키지: 2010 (5025 Metric)

재고4,554

MCR006YZPF5601

Rohm Semiconductor

RES SMD 5.6K OHM 1% 1/20W 0201

Resistance: 5.6 kOhms
Tolerance: ±1%
Power (Watts): 0.05W, 1/20W
Composition: Thick Film
Features: -
Temperature Coefficient: ±250ppm/°C
Operating Temperature: -55°C ~ 125°C
Package / Case: 0201 (0603 Metric)
Supplier Device Package: 0201
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Height - Seated (Max): 0.010" (0.26mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0201 (0603 Metric)

재고8,892

MCR006YZPF5101

Rohm Semiconductor

RES SMD 5.1K OHM 1% 1/20W 0201

Resistance: 5.1 kOhms
Tolerance: ±1%
Power (Watts): 0.05W, 1/20W
Composition: Thick Film
Features: -
Temperature Coefficient: ±250ppm/°C
Operating Temperature: -55°C ~ 125°C
Package / Case: 0201 (0603 Metric)
Supplier Device Package: 0201
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Height - Seated (Max): 0.010" (0.26mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0201 (0603 Metric)

재고2,088

MCR10EZHF2203

Rohm Semiconductor

RES SMD 220K OHM 1% 1/8W 0805

Resistance: 220 kOhms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고6,516

KTR18EZPF27R4

Rohm Semiconductor

RES SMD 27.4 OHM 1% 1/4W 1206

Resistance: 27.4 Ohms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고2,502

KTR18EZPF18R2

Rohm Semiconductor

RES SMD 18.2 OHM 1% 1/4W 1206

Resistance: 18.2 Ohms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고7,236

TRR03EZPJ273

Rohm Semiconductor

RES SMD 27K OHM 5% 1/10W 0603

Resistance: 27 kOhms
Tolerance: ±5%
Power (Watts): 0.1W, 1/10W
Composition: Thick Film
Features: Anti-Sulfur
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0603 (1608 Metric)
Supplier Device Package: 0603
Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
Height - Seated (Max): 0.022" (0.55mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0603 (1608 Metric)

재고4,770

TRR01MZPJ2R2

Rohm Semiconductor

RES SMD 2.2 OHM 5% 1/16W 0402

Resistance: 2.2 Ohms
Tolerance: ±5%
Power (Watts): 0.063W, 1/16W
Composition: Thick Film
Features: Anti-Sulfur
Temperature Coefficient: -250/ +500ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0402 (1005 Metric)
Supplier Device Package: 0402
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Height - Seated (Max): 0.016" (0.40mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0402 (1005 Metric)

재고2,034

MCR18ERTF8061

Rohm Semiconductor

RES SMD 8.06K OHM 1% 1/4W 1206

Resistance: 8.06 kOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고2,808

MCR10ERTF3601

Rohm Semiconductor

RES SMD 3.6K OHM 1% 1/8W 0805

Resistance: 3.6 kOhms
Tolerance: ±1%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고8,280

MCR18ERTF3001

Rohm Semiconductor

RES SMD 3K OHM 1% 1/4W 1206

Resistance: 3 kOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: -
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고50,250

KTR18EZPF1623

Rohm Semiconductor

RES SMD 162K OHM 1% 1/4W 1206

Resistance: 162 kOhms
Tolerance: ±1%
Power (Watts): 0.25W, 1/4W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±100ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 1206 (3216 Metric)
Supplier Device Package: 1206
Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 1206 (3216 Metric)

재고43,656

KTR10EZPJ225

Rohm Semiconductor

RES SMD 2.2M OHM 5% 1/8W 0805

Resistance: 2.2 MOhms
Tolerance: ±5%
Power (Watts): 0.125W, 1/8W
Composition: Thick Film
Features: Automotive AEC-Q200, High Voltage
Temperature Coefficient: ±200ppm/°C
Operating Temperature: -55°C ~ 155°C
Package / Case: 0805 (2012 Metric)
Supplier Device Package: 0805
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Height - Seated (Max): 0.026" (0.65mm)
Number of Terminations: 2
Failure Rate: -

패키지: 0805 (2012 Metric)

재고227,508

R6020KNXC7G

Rohm Semiconductor

600V 20A TO-220FM, HIGH-SPEED SW

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FM
Package / Case: TO-220-3 Full Pack

패키지: -

재고2,319

KDZVTR47A

Rohm Semiconductor

DIODE ZENER 47V 1W PMDU

Voltage - Zener (Nom) (Vz): 47 V
Tolerance: ±6.38%
Power - Max: 1 W
Impedance (Max) (Zzt): -
Current - Reverse Leakage @ Vr: 5 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: -
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU

패키지: -

재고9,105

2SAR512PHZGT100

Rohm Semiconductor

TRANS PNP 30V 2A SOT89

Transistor Type: PNP
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 35mA, 700mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Power - Max: 500 mW
Frequency - Transition: 430MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: SOT-89

패키지: -

재고1,974

RB088BM150FNSTL

Rohm Semiconductor

DIODE ARR SCHOTT 150V 5A TO252

Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io) (per Diode): 5A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15 µA @ 150 V
Operating Temperature - Junction: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252

패키지: -

재고7,500

BAW156HMT116

Rohm Semiconductor

DIODE ARRAY GP 80V 215MA SSD3

Diode Configuration: 1 Pair Common Anode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Operating Temperature - Junction: 150°C (Max)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SSD3

패키지: -

재고2,550