페이지 5 - STMicroelectronics 제품 - 다이오드 - 정류기 - 단일 | Heisener Electronics
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STMicroelectronics 제품 - 다이오드 - 정류기 - 단일

기록 937
페이지  5/34
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
STPST10H100SB-TR
STMicroelectronics

100 V, 10 A, DPAK POWER SCHOTTKY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 715 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 26 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: 175°C
패키지: -
재고7,155
100 V
10A
715 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
26 µA @ 100 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
175°C
STPST2H100AF
STMicroelectronics

100 V, 2 A POWER SCHOTTKY TRENCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-128
  • Supplier Device Package: SOD128Flat
  • Operating Temperature - Junction: 175°C
패키지: -
재고32,955
100 V
2A
805 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7 µA @ 100 V
-
Surface Mount
SOD-128
SOD128Flat
175°C
STPST2H100ZF
STMicroelectronics

100 V, 2 A POWER SCHOTTKY TRENCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: 175°C
패키지: -
재고25,662
100 V
2A
805 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7 µA @ 100 V
-
Surface Mount
SOD-123F
SOD-123F
175°C
STPST2H100UF
STMicroelectronics

100 V, 2 A POWER SCHOTTKY TRENCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBflat
  • Operating Temperature - Junction: 175°C
패키지: -
재고26,970
100 V
2A
805 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.7 µA @ 100 V
-
Surface Mount
DO-221AA, SMB Flat Leads
SMBflat
175°C
STTH30M06SPF
STMicroelectronics

DIODE GEN PURP 600V 30A TO3PF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 3.8 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고2,652
600 V
30A
3.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
60 µA @ 600 V
-
Through Hole
TO-3P-3 Full Pack
TO-3PF
175°C (Max)
STTH15RQ06GY-TR
STMicroelectronics

DIODE GEN PURP 600V 15A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고87
600 V
15A
2.95 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
STTH802SF
STMicroelectronics

DIODE GEN PURP 200V 8A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 6 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고31,500
200 V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
6 µA @ 200 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
175°C (Max)
STPSC8065D
STMicroelectronics

DIODE SIL CARB 650V 8A TO220AC

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 8 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 105 µA @ 650 V
  • Capacitance @ Vr, F: 540pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고2,994
650 V
8A
1.45 V @ 8 A
No Recovery Time > 500mA (Io)
0 ns
105 µA @ 650 V
540pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STPST10H100SBYTR
STMicroelectronics

AUTOMOTIVE 100 V, 10 A, DPAK POW

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 715 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 26 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고7,326
100 V
10A
715 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
26 µA @ 100 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-40°C ~ 175°C
1N5822UB1
STMicroelectronics

AEROSPACE 40 V 3 A POWER SCHOTTK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 485 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 80 µA @ 40 V
  • Capacitance @ Vr, F: 240pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: 2-LCCB
  • Operating Temperature - Junction: 150°C
패키지: -
재고63
40 V
3A
485 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
80 µA @ 40 V
240pF @ 5V, 1MHz
Surface Mount
2-SMD, No Lead
2-LCCB
150°C
STTH2004SG-TR
STMicroelectronics

RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
STPSC20065GY-TR
STMicroelectronics

DIODE SIL CARBIDE 650V 20A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 150 µA @ 600 V
  • Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
650 V
20A
1.45 V @ 20 A
No Recovery Time > 500mA (Io)
0 ns
150 µA @ 600 V
1250pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C
STTH6012WL
STMicroelectronics

DIODE GP 1.2KV 60A DO247 LL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 60 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 125 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: DO-247 LL
  • Operating Temperature - Junction: 175°C
패키지: -
재고1,719
1200 V
60A
2.25 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
125 ns
30 µA @ 1200 V
-
Through Hole
TO-247-2
DO-247 LL
175°C
STPS560SFY
STMicroelectronics

DIODE SCHOTTKY 60V 5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 560 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고12,438
60 V
5A
560 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 60 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C
STPS3H100UFNY
STMicroelectronics

3 A 100 V SCHOTTKY RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
STPST5H100SBY-TR
STMicroelectronics

AUTOMOTIVE 100 V, 5 A, DPAK POWE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 685 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 11.5 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고37,500
100 V
5A
685 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
11.5 µA @ 100 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
-40°C ~ 175°C
STTH3012WL
STMicroelectronics

DIODE GP 1.2KV 30A DO247 LL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.25 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 115 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: DO-247 LL
  • Operating Temperature - Junction: 175°C
패키지: -
Request a Quote
1200 V
30A
2.25 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
115 ns
20 µA @ 1200 V
-
Through Hole
TO-247-2
DO-247 LL
175°C
STPS1L30AFN
STMicroelectronics

DIODE SCHOTTKY 30V 1A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 395 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat Notch
  • Operating Temperature - Junction: 150°C
패키지: -
Request a Quote
30 V
1A
395 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 30 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat Notch
150°C
STTH60RQ06W
STMicroelectronics

DIODE GEN PURP 600V 60A DO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 65 ns
  • Current - Reverse Leakage @ Vr: 80 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-247-2 (Straight Leads)
  • Supplier Device Package: DO-247
  • Operating Temperature - Junction: 175°C (Max)
패키지: -
재고1,050
600 V
60A
-
Fast Recovery =< 500ns, > 200mA (Io)
65 ns
80 µA @ 600 V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
STPS130AFN
STMicroelectronics

DIODE SCHOTTKY 30V 1A SMAFLAT

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAflat
  • Operating Temperature - Junction: 150°C
패키지: -
재고6,306
30 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 mA @ 30 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAflat
150°C
STPSC10H12G2-TR
STMicroelectronics

DIODE SIL CARB 1.2KV 10A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
  • Capacitance @ Vr, F: 725pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고2,592
1200 V
10A
1.5 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
60 µA @ 1200 V
725pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
STTH15RQ06G2Y-TR
STMicroelectronics

DIODE GEN PURP 600V 15A D2PAK HV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 2.95 V @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고6,744
600 V
15A
2.95 V @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
20 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK HV
-40°C ~ 175°C
STPSC2H065BY-TR
STMicroelectronics

DIODE SIL CARBIDE 650V 2A DPAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: 135pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
Request a Quote
650 V
2A
1.55 V @ 2 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 650 V
135pF @ 0V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK
-40°C ~ 175°C
STPST10H100SF
STMicroelectronics

100 V, 10 A PSMC POWER SCHOTTKY

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 26 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: 175°C
패키지: -
Request a Quote
100 V
10A
700 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
26 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
175°C
STPST8H100SF
STMicroelectronics

100 V, 8 A POWER SCHOTTKY TRENCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 695 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 17 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: 175°C
패키지: -
재고17,850
100 V
8A
695 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
17 µA @ 100 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
175°C
STPS1645GY-TR
STMicroelectronics

DIODE SCHOTTKY 45V 15A TO220AC

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
패키지: -
Request a Quote
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STBR1508B2Y-TR
STMicroelectronics

AUTOMOTIVE 800 V, 15 A BRIDGE RE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.09 V @ 15 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 800 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK HV
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고7,422
800 V
15A
1.09 V @ 15 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 800 V
-
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
DPAK HV
-40°C ~ 175°C
STPSC10065G2-TR
STMicroelectronics

DIODE SIL CARBIDE 650V 10A D2PAK

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 130 µA @ 650 V
  • Capacitance @ Vr, F: 670pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -40°C ~ 175°C
패키지: -
재고3,693
650 V
10A
1.45 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
130 µA @ 650 V
670pF @ 0V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C