페이지 103 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
2M56ZHA0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 56V, 2000MW, %, AE Voltage - Zener (Nom) (Vz): 56V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 55 Ohms Current - Reverse Leakage @ Vr: 500nA @ 42.6V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고7,520
BZD27C10PHRUG	Taiwan Semiconductor Corporation	DIODE, ZENER, 10V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 10V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 4 Ohms Current - Reverse Leakage @ Vr: 7µA @ 7.5V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고7,840
BZD27C20PHMHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 20V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 15V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,880
BZD27C68P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5.88% Power - Max: 1W Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,344
MTZJ6V8SC R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.84V, 500MW, %, D Voltage - Zener (Nom) (Vz): 6.84V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 20 Ohms Current - Reverse Leakage @ Vr: 2µA @ 3.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: DO-204AG, DO-34, Axial	재고5,792
BZD27C43P RVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 43V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 43V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 33V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고6,992
TS8P02G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 8A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 100V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고3,312
MBRS1560CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 60V 15A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
BZV55B62	Taiwan Semiconductor Corporation	MMELF, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 62 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 150 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 47 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF	패키지: -	Request a Quote
MTZJ36SA	Taiwan Semiconductor Corporation	DO-34, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 32.97 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 75 Ohms Current - Reverse Leakage @ Vr: 200 nA @ 27 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: -	Request a Quote
M3Z8V2C-RRG	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 8.2 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	재고9,000
S1JBH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고18,000
PU3BCH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 47pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고17,475
F1T6GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고15,000
SRS16100	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 100V 16A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io) (per Diode): 16A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
TSF40L200C	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 200V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 980 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	패키지: -	재고36
HERAF806G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000
BZY55C6V2	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 5%, SMAL Voltage - Zener (Nom) (Vz): 6.2 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	패키지: -	Request a Quote
SK54C	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
UDZS18B	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 18 V Tolerance: ±2% Power - Max: 200 mW Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	Request a Quote
SSB44	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 4A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 40 V Capacitance @ Vr, F: 235pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고17,637
RS5M-T	Taiwan Semiconductor Corporation	500NS, 5A, 1000V, FAST RECOVERY Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고8,910
MBRF3080CT-Y	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 80V 30A ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 80 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	패키지: -	Request a Quote
1PGSMB5953-R5G	Taiwan Semiconductor Corporation	DIODE ZENER 150V 3W DO214AA Voltage - Zener (Nom) (Vz): 150 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 600 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 114 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: -	Request a Quote
HER1606GH	Taiwan Semiconductor Corporation	DIODE ARRAY GP 600V 16A TO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io) (per Diode): 16A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB	패키지: -	재고3,000
SRA2060	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
TSM043NB04LCZ-C0G	Taiwan Semiconductor Corporation	40V, 124A, SINGLE N-CHANNEL POWE FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4387 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 16A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	패키지: -	재고12,000
TQM110NB04CR-RLG	Taiwan Semiconductor Corporation	MOSFET N-CH 40V 12A/54A 8PDFNU FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 54A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1352 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 68W (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Supplier Device Package: 8-PDFNU (5x6) Package / Case: 8-PowerTDFN	패키지: -	재고14,214