Taiwan Semiconductor Corporation 제품

1N4754AHB0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 39V, 1000MW, 5%, A

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

BZD27C24PHMQG

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 1000MW, %, AE

• Voltage - Zener (Nom) (Vz): 24.2V
• Tolerance: ±5.78%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

1SMA5949HR3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 100V, 1500MW, 5%,

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 76V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

1SMA5945HR3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 68V, 1500MW, 5%, A

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 120 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 51.7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

BZD17C24P M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 24V, 800MW, %, SUB

• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5.83%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 18V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

BZY55C16 RYG

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 500MW, 5%, 08

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 12V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

패키지: 0805 (2012 Metric)

GBU15L05 D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 15A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 7.5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

패키지: 4-SIP, GBU

EABS1GHRGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SUPER FAST, 1A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

패키지: 4-SMD, Gull Wing

GBU606 D2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 6A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

패키지: 4-SIP, GBU

KBP206G-C2

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 800V 2A KBP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800 V
• Current - Average Rectified (Io): 2 A
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 2 A
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBP
• Supplier Device Package: KBP

패키지: -

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ES1DF-T

Taiwan Semiconductor Corporation

35NS, 1A, 200V, SUPER FAST RECOV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: SMAF
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

MBR6060PT

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 60V 60A TO247AD

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 60 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)

패키지: -

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TSM4436CS

Taiwan Semiconductor Corporation

60V, 8A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: -

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HER1005GH

Taiwan Semiconductor Corporation

DIODE ARRAY GP 400V 10A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 400 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: -

TS25P01G

Taiwan Semiconductor Corporation

DIODE BRIDGE 50V 25A TS-6P

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50 V
• Current - Average Rectified (Io): 25 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
• Current - Reverse Leakage @ Vr: 10 µA @ 50 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

패키지: -

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S12GCH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 12A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 78pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

1N4007GH-A0G

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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FR305G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

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1N5822H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Capacitance @ Vr, F: 200pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

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TUAS6KH

Taiwan Semiconductor Corporation

6A, 800V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 39pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: SMPC4.6U
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

BZX584B30

Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 30 V
• Tolerance: ±2%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 21 V
• Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

패키지: -

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RS1KFS

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A SOD128

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

BZT52C36

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 5%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 36 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

패키지: -

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TSM60NB099CZ-C0G

Taiwan Semiconductor Corporation

MOSFET N-CHANNEL 600V 38A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2587 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 298W (Tc)
• Rds On (Max) @ Id, Vgs: 99mOhm @ 11.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

패키지: -

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KBU402G

Taiwan Semiconductor Corporation

DIODE BRIDGE 4A 100V KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 100 V
• Current - Average Rectified (Io): 4 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

패키지: -

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KBU801G

Taiwan Semiconductor Corporation

DIODE BRIDGE 8A 50V KBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50 V
• Current - Average Rectified (Io): 8 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
• Current - Reverse Leakage @ Vr: 5 µA @ 50 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBU
• Supplier Device Package: KBU

패키지: -

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SRF10150

Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 150V ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 150 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

패키지: -

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TS2581CS

Taiwan Semiconductor Corporation

ASYNCHRONOUS BUCK SWITCHING CONT

• Output Type: PWM Signal
• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): 8V ~ 40V
• Frequency - Switching: 100kHz
• Duty Cycle (Max): 100%
• Synchronous Rectifier: No
• Clock Sync: No
• Serial Interfaces: -
• Control Features: Current Limit, Soft Start
• Operating Temperature: -20°C ~ 125°C
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

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