페이지 136 - Taiwan Semiconductor Corporation 제품 | Heisener Electronics
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Taiwan Semiconductor Corporation 제품

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페이지  136/154
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BZD27C47P RUG
Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 1000MW, %, SU

  • Voltage - Zener (Nom) (Vz): 47V
  • Tolerance: ±6.38%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 36V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
패키지: DO-219AB
재고3,872
BZD27C200P R3G
Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 1000MW, %, S

  • Voltage - Zener (Nom) (Vz): 200V
  • Tolerance: ±6%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 750 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 150V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
패키지: DO-219AB
재고3,680
2M43Z B0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 2000MW, %, DO

  • Voltage - Zener (Nom) (Vz): 43V
  • Tolerance: ±5%
  • Power - Max: 2W
  • Impedance (Max) (Zzt): 35 Ohms
  • Current - Reverse Leakage @ Vr: 500nA @ 32.7V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
패키지: DO-204AC, DO-15, Axial
재고7,792
1SMA4762HM2G
Taiwan Semiconductor Corporation

DIODE, ZENER, 82V, 1000MW, %, AE

  • Voltage - Zener (Nom) (Vz): 82V
  • Tolerance: ±5%
  • Power - Max: 1.25W
  • Impedance (Max) (Zzt): 200 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 62.2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
패키지: DO-214AC, SMA
재고2,992
BZD17C18P RHG
Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 800MW, %, SUB

  • Voltage - Zener (Nom) (Vz): 18V
  • Tolerance: ±6.38%
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 13V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
패키지: DO-219AB
재고6,080
1N4750G A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 27V, 1000MW, 5%, D

  • Voltage - Zener (Nom) (Vz): 27V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 35 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 20.6V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 200°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고7,968
BZX585B5V6 RKG
Taiwan Semiconductor Corporation

DIODE, ZENER, 5.6V, 200MW, 2%, S

  • Voltage - Zener (Nom) (Vz): 5.6V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 40 Ohms
  • Current - Reverse Leakage @ Vr: 900nA @ 2V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SOD-523F
패키지: SC-79, SOD-523
재고4,736
BZT52B9V1S RRG
Taiwan Semiconductor Corporation

DIODE, ZENER, 9.1V, 200MW, 2%, S

  • Voltage - Zener (Nom) (Vz): 9.1V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 450nA @ 6V
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-90, SOD-323F
  • Supplier Device Package: SOD-323F
패키지: SC-90, SOD-323F
재고6,864
1N5263B A0G
Taiwan Semiconductor Corporation

DIODE, ZENER, 56V, 500MW, 5%, DO

  • Voltage - Zener (Nom) (Vz): 56V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 150 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 43V
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
  • Operating Temperature: 100°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
패키지: DO-204AH, DO-35, Axial
재고5,472
BZD27C6V8P RVG
Taiwan Semiconductor Corporation

DIODE, ZENER, 6.8V, 1000MW, %, S

  • Voltage - Zener (Nom) (Vz): 6.8V
  • Tolerance: ±5%
  • Power - Max: 1W
  • Impedance (Max) (Zzt): 3 Ohms
  • Current - Reverse Leakage @ Vr: 10µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
패키지: DO-219AB
재고6,528
TS50P05GHC2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
패키지: 4-SIP, TS-6P
재고5,488
D2SB60HD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 2A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
패키지: 4-SIP, GBL
재고7,808
SBS24HRGG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, SCHOTTKY BRIDG

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 40V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
  • Current - Reverse Leakage @ Vr: 100µA @ 40V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: ABS
패키지: 4-SMD, Gull Wing
재고2,736
RMB6S RCG
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, FAST, 0.8A, 60

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-BESOP (0.173", 4.40mm Width)
  • Supplier Device Package: MBS
패키지: 4-BESOP (0.173", 4.40mm Width)
재고6,528
TPC817MC C9G
Taiwan Semiconductor Corporation

OPTOISO 5KV TRANS DIP-4M

  • Number of Channels: 1
  • Voltage - Isolation: 5000Vrms
  • Current Transfer Ratio (Min): 200% @ 5mA
  • Current Transfer Ratio (Max): 400% @ 5mA
  • Turn On / Turn Off Time (Typ): -
  • Rise / Fall Time (Typ): 4µs, 3µs
  • Input Type: DC
  • Output Type: Transistor
  • Voltage - Output (Max): 80V
  • Current - Output / Channel: 50mA
  • Voltage - Forward (Vf) (Typ): 1.2V
  • Current - DC Forward (If) (Max): 50mA
  • Vce Saturation (Max): 200mV
  • Operating Temperature: -40°C ~ 100°C
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,484
TSM150P03PQ33
Taiwan Semiconductor Corporation

-30, -36, SINGLE P-CHANNEL

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 27.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (3.1x3.1)
  • Package / Case: 8-PowerWDFN
패키지: -
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1PGSMB5934-R5G
Taiwan Semiconductor Corporation

DIODE ZENER 24V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 24 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 19 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 18.2 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
패키지: -
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HS2K
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고17,064
BZD27C24PW
Taiwan Semiconductor Corporation

DIODE ZENER 24V 1W SOD123W

  • Voltage - Zener (Nom) (Vz): 24 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 15 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 18 V
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD-123W
패키지: -
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1PGSMB5932
Taiwan Semiconductor Corporation

DIODE ZENER 20V 3W DO214AA

  • Voltage - Zener (Nom) (Vz): 20 V
  • Tolerance: ±5%
  • Power - Max: 3 W
  • Impedance (Max) (Zzt): 14 Ohms
  • Current - Reverse Leakage @ Vr: 1 µA @ 15.2 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
패키지: -
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ZM4752A
Taiwan Semiconductor Corporation

MELF, 1000MW, 5%, SMALL SIGNAL Z

  • Voltage - Zener (Nom) (Vz): 33 V
  • Tolerance: ±5%
  • Power - Max: 1 W
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 5 µA @ 25.1 V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -65°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: MELF
패키지: -
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UG56G
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 5A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고7,470
ESH1C
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 150 V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: -
재고45,000
UG1008GH
Taiwan Semiconductor Corporation

DIODE ARRAY GP 600V 10A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
패키지: -
재고2,421
1T5G
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A TS-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고15,000
UF4005H
Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고15,000
SK510C
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: -
재고6,858
MBRF10100CTH
Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 100V ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 100 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
패키지: -
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