Taiwan Semiconductor Corporation 제품

2M12ZHR0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 2000MW, %, AE

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 4.5 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

2M30Z A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 30V, 2000MW, %, DO

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

BZD27C18P RFG

Taiwan Semiconductor Corporation

DIODE, ZENER, 18V, 1000MW, %, SU

• Voltage - Zener (Nom) (Vz): 17.95V
• Tolerance: ±6.4%
• Power - Max: 1W
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 13V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

패키지: DO-219AB

1SMB5937 M4G

Taiwan Semiconductor Corporation

DIODE, ZENER, 33V, 3000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 33V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 33 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 25.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: DO-214AA, SMB

1N4756A R1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 47V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 35.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

1M130Z R1G

Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 700 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 98.8V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

1N4755G R0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 43V, 1000MW, 5%, D

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 32.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 200°C (TA)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

BZX79B16 A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 16V, 500MW, 2%, DO

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 11.2mA @ 50mV
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

BZT52B7V5 RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 7.5V, 500MW, 2%, S

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 900nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

패키지: SOD-123F

TS20P01GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 20A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

패키지: 4-SIP, TS-6P

TS9011DCX RFG

Taiwan Semiconductor Corporation

IC REG LINEAR 1.8V 250MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 250mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

TS2951CS50 RLG

Taiwan Semiconductor Corporation

IC REG LINEAR 5V 150MA

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

BZX584B18-RSG

Taiwan Semiconductor Corporation

SOD-523F, 150MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 18 V
• Tolerance: ±2%
• Power - Max: 150 mW
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 12.6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523F

패키지: -

1N4733G

Taiwan Semiconductor Corporation

DO-204AL (DO-41), 1000MW, 5%, SM

• Voltage - Zener (Nom) (Vz): 5.1 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
• Operating Temperature: -65°C ~ 200°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: -

Request a Quote

TS78L15CS

Taiwan Semiconductor Corporation

3-TERMINAL 100MA FIXED 15V VOLTA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 35V
• Voltage - Output (Min/Fixed): 15V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.7V @ 100mA
• Current - Output: 100mA
• Current - Quiescent (Iq): 6.6 mA
• Current - Supply (Max): -
• PSRR: 39dB (120Hz)
• Control Features: Current Limit
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOP

패키지: -

Request a Quote

MUR110SH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 2 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: -

TSD1GLW

Taiwan Semiconductor Corporation

1A, 400V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 11pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W
• Operating Temperature - Junction: -40°C ~ 175°C

패키지: -

BZD27C120PW

Taiwan Semiconductor Corporation

DIODE ZENER 120V 1W SOD123W

• Voltage - Zener (Nom) (Vz): 120 V
• Tolerance: ±5%
• Power - Max: 1 W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1 µA @ 91 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD-123W

패키지: -

Request a Quote

HERF1007GH

Taiwan Semiconductor Corporation

DIODE ARRAY GP 800V 10A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

패키지: -

SK320BH

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 3A DO214AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

S2KFL

Taiwan Semiconductor Corporation

2A, 800V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 800 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

S3BBH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5 µs
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: -

Request a Quote

1SMA5946H

Taiwan Semiconductor Corporation

DIODE ZENER 75V 1.5W DO214AC

• Voltage - Zener (Nom) (Vz): 75 V
• Tolerance: ±5%
• Power - Max: 1.5 W
• Impedance (Max) (Zzt): 140 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 56 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: -

Request a Quote

TSM5NC50CF

Taiwan Semiconductor Corporation

500V, 5A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500 V
• Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 586 pF @ 50 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 1.38Ohm @ 1.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ITO-220S
• Package / Case: TO-220-3 Full Pack

패키지: -

Request a Quote

BZY55B9V1

Taiwan Semiconductor Corporation

0805 (CERAMICS), 500MW, 2%, SMAL

• Voltage - Zener (Nom) (Vz): 9.1 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 6.8 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

패키지: -

Request a Quote

BAT43-L0-R0

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200MA DO35

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5 ns
• Current - Reverse Leakage @ Vr: 500 nA @ 25 V
• Capacitance @ Vr, F: 7pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: -65°C ~ 125°C

패키지: -

Request a Quote

SRAF530H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 5A ITO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 30 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -

Request a Quote

BAT46GW-RHG

Taiwan Semiconductor Corporation

0.25A, 100V, SCHOTTKY RECTIFIER

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 75 V
• Capacitance @ Vr, F: 14.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: -