페이지 29 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
2M17ZHB0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 17V, 2000MW, %, AE Voltage - Zener (Nom) (Vz): 17V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 9 Ohms Current - Reverse Leakage @ Vr: 500nA @ 13V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고4,736
BZD27C130PHRVG	Taiwan Semiconductor Corporation	DIODE, ZENER, 130V, 1000MW, %, A Voltage - Zener (Nom) (Vz): 132.5V Tolerance: ±6.41% Power - Max: 1W Impedance (Max) (Zzt): 300 Ohms Current - Reverse Leakage @ Vr: 1µA @ 100V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고3,184
BZD27C12PHRFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 12V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 12.05V Tolerance: ±5.39% Power - Max: 1W Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 3µA @ 9.1V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,256
BZD27C20P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 20V, 1000MW, %, SU Voltage - Zener (Nom) (Vz): 20V Tolerance: ±6% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 15V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,152
1SMA4760HR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5% Power - Max: 1.25W Impedance (Max) (Zzt): 150 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51.7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: DO-214AC, SMA	재고7,376
BZT52C16K RKG	Taiwan Semiconductor Corporation	DIODE, ZENER, 16V, 200MW, 5%, SO Voltage - Zener (Nom) (Vz): 16V Tolerance: ±5% Power - Max: 200mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 100nA @ 12V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: SC-79, SOD-523	재고3,856
BZT52C36-G RHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 36V, 350MW, 5%, SO Voltage - Zener (Nom) (Vz): 36V Tolerance: ±5% Power - Max: 350mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 100nA @ 25.2V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: SOD-123	재고2,128
BZS55B5V6 RXG	Taiwan Semiconductor Corporation	DIODE, ZENER, 5.6V, 500MW, 2%, 1 Voltage - Zener (Nom) (Vz): 5.6V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 100nA @ 1V Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	패키지: 1206 (3216 Metric)	재고2,928
MTZJ10SC R0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 9.95V, 500MW, %, D Voltage - Zener (Nom) (Vz): 9.95V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 200nA @ 7V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AG, DO-34, Axial Supplier Device Package: DO-34	패키지: DO-204AG, DO-34, Axial	재고5,424
TS40P07G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 40A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고6,320
DBLS206GHRDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 800V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 800V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: 4-SMD, Gull Wing	재고5,888
TPC817C C9G	Taiwan Semiconductor Corporation	OPTOISO 5KV TRANS 4DIP Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 400% @ 5mA Turn On / Turn Off Time (Typ): - Rise / Fall Time (Typ): 4µs, 3µs Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.2V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 200mV Operating Temperature: -40°C ~ 100°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,598
1M130ZH	Taiwan Semiconductor Corporation	DIODE ZENER 130V 1W DO204AL Voltage - Zener (Nom) (Vz): 130 V Tolerance: ±5% Power - Max: 1 W Impedance (Max) (Zzt): 700 Ohms Current - Reverse Leakage @ Vr: 5 µA @ 98.8 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: -	Request a Quote
KBU401G-T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 4A KBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBU Supplier Device Package: KBU	패키지: -	Request a Quote
S2MH	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고16,320
BZT52C4V3K	Taiwan Semiconductor Corporation	SOD-523F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 4.3 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 5 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: -	Request a Quote
ES1JFS	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고42,000
ES1FLH	Taiwan Semiconductor Corporation	35NS, 1A, 300V, SUPER FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
ES1ALH	Taiwan Semiconductor Corporation	35NS, 1A, 50V, SUPER FAST RECOVE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
BC856A	Taiwan Semiconductor Corporation	SOT-23, -80V, -0.1A, PNP BIPOLAR Transistor Type: PNP Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Power - Max: 200 mW Frequency - Transition: 100MHz Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: -	Request a Quote
PUUP12J	Taiwan Semiconductor Corporation	25NS, 12A, 600V, ULTRA FAST RECO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 26 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 92pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고16,818
KBL405G-T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 4A KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	패키지: -	Request a Quote
SSL32H	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 410 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote
M3Z68VC-RRG	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 68 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 200 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 51 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	재고9,000
BZT55B62	Taiwan Semiconductor Corporation	MMELF, 500MW, 2%, SMALL SIGNAL Z Voltage - Zener (Nom) (Vz): 62 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 150 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 47 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: QMMELF	패키지: -	Request a Quote
BZD17C39P	Taiwan Semiconductor Corporation	SUB SMA, 800MW, 6%, ZENER DIODE Voltage - Zener (Nom) (Vz): 39 V Tolerance: ±5.13% Power - Max: 800 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: Sub SMA	패키지: -	Request a Quote
BZY55C8V2-RBG	Taiwan Semiconductor Corporation	DIODE ZENER 8.2V 500MW 0805 Voltage - Zener (Nom) (Vz): 8.2 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 7 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	패키지: -	Request a Quote
HERA806G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 80 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000