페이지 46 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
BZD27C18PHR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 18V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 17.95V Tolerance: ±6.4% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 13V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고5,376
BZD17C13P RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 13V Tolerance: ±6.53% Power - Max: 800mW Impedance (Max) (Zzt): 10 Ohms Current - Reverse Leakage @ Vr: 2µA @ 10V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고2,432
BZD17C68P MHG	Taiwan Semiconductor Corporation	DIODE, ZENER, 68V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 68V Tolerance: ±5.88% Power - Max: 800mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 1µA @ 51V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고4,816
BZX84C2V7 RFG	Taiwan Semiconductor Corporation	DIODE, ZENER, 2.7V, 300MW, 5%, S Voltage - Zener (Nom) (Vz): 2.7V Tolerance: ±5% Power - Max: 300mW Impedance (Max) (Zzt): 100 Ohms Current - Reverse Leakage @ Vr: 20µA @ 1V Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23	패키지: TO-236-3, SC-59, SOT-23-3	재고2,000
BZX79B13 A0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 13V, 500MW, 2%, DO Voltage - Zener (Nom) (Vz): 13V Tolerance: ±2% Power - Max: 500mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 8mA @ 100mV Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35	패키지: DO-204AH, DO-35, Axial	재고4,096
BZT55C4V3 L0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 4.3V, 500MW, 5%, Q Voltage - Zener (Nom) (Vz): 4.3V Tolerance: ±5% Power - Max: 500mW Impedance (Max) (Zzt): 75 Ohms Current - Reverse Leakage @ Vr: 1µA @ 1V Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: Mini MELF	패키지: SOD-80 Variant	재고5,120
GBPC3510M T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 35A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 35A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A Current - Reverse Leakage @ Vr: 5µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC-M Supplier Device Package: GBPC-M	패키지: 4-Square, GBPC-M	재고2,768
TS25P01G C2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 50V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A Current - Reverse Leakage @ Vr: 10µA @ 50V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고5,200
1SMB5943H	Taiwan Semiconductor Corporation	DIODE ZENER 56V 3W DO214AA Voltage - Zener (Nom) (Vz): 56 V Tolerance: ±5% Power - Max: 3 W Impedance (Max) (Zzt): 86 Ohms Current - Reverse Leakage @ Vr: 1 µA @ 42.6 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB)	패키지: -	Request a Quote
BZY55B36	Taiwan Semiconductor Corporation	0805 (CERAMICS), 500MW, 2%, SMAL Voltage - Zener (Nom) (Vz): 36 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 80 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 27 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 0805 (2012 Metric) Supplier Device Package: 0805	패키지: -	Request a Quote
TSD30H200CW	Taiwan Semiconductor Corporation	DIODE ARRAY SCHOT 30A TO263AB Diode Configuration: - Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io) (per Diode): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Operating Temperature - Junction: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
TQL820CA14V50-RLG	Taiwan Semiconductor Corporation	200MA, LOW-IQ 40A LOW-DROPOUT RE Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 50V Voltage - Output (Min/Fixed): 5V Voltage - Output (Max): - Voltage Dropout (Max): 0.34V @ 200mA Current - Output: 200mA Current - Quiescent (Iq): 77 µA Current - Supply (Max): - PSRR: 59dB (100Hz) Control Features: Enable, Reset, Watchdog Protection Features: Over Current, Over Temperature Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 14-TSSOP-EP	패키지: -	재고14,925
MBRF3080CTH	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 80V 30A ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io) (per Diode): 30A Voltage - Forward (Vf) (Max) @ If: 940 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 80 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	패키지: -	Request a Quote
SBS24H	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 40V 2A ABS Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 40 V Current - Average Rectified (Io): 2 A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 100 µA @ 40 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: ABS	패키지: -	Request a Quote
TS25P07G-K-D2G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 25A TS-6P Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: -	Request a Quote
1SMA5953H	Taiwan Semiconductor Corporation	DIODE ZENER 150V 1.5W DO214AC Voltage - Zener (Nom) (Vz): 150 V Tolerance: ±5% Power - Max: 1.5 W Impedance (Max) (Zzt): 600 Ohms Current - Reverse Leakage @ Vr: 500 nA @ 114 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA)	패키지: -	Request a Quote
UG10G	Taiwan Semiconductor Corporation	25NS, 10A, 400V, ULTRA FAST RECO Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고2,970
1N5398G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고20,985
BZS55C16-RAG	Taiwan Semiconductor Corporation	DIODE ZENER 16V 500MW 1206 Voltage - Zener (Nom) (Vz): 16 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 40 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 12 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	패키지: -	Request a Quote
SKLWH	Taiwan Semiconductor Corporation	0.8A, 800V, STANDARD RECOVERY RE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 800 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고60,000
TSF40H150C	Taiwan Semiconductor Corporation	DIODE ARR SCHOTT 150V ITO220AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io) (per Diode): 20A Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 150 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB	패키지: -	Request a Quote
RS5D-T-M6G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 57pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
1N4005GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고30,000
MBRS25100CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 100V 25A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io) (per Diode): 25A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
SR302	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 20 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote
BZT52B75	Taiwan Semiconductor Corporation	SOD-123F, 500MW, 2%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 75 V Tolerance: ±2% Power - Max: 500 mW Impedance (Max) (Zzt): 255 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F	패키지: -	Request a Quote
TSC966CW	Taiwan Semiconductor Corporation	SOT-223, 600V, 0.3A, NPN BIPOLAR Transistor Type: NPN Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Power - Max: 1 W Frequency - Transition: 50MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223	패키지: -	Request a Quote
PU2BFSH	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A SOD128 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 100 V Capacitance @ Vr, F: 32pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128 Operating Temperature - Junction: -55°C ~ 175°C	패키지: -	재고83,520