페이지 72 - Taiwan Semiconductor Corporation 제품

부품 번호	제조업체	설명	패키지	재고
2M6.8ZHB0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 6.8V, 2000MW, %, A Voltage - Zener (Nom) (Vz): 6.8V Tolerance: ±5% Power - Max: 2W Impedance (Max) (Zzt): 1.5 Ohms Current - Reverse Leakage @ Vr: 1mA @ 5.5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15)	패키지: DO-204AC, DO-15, Axial	재고2,928
BZD27C27PHR3G	Taiwan Semiconductor Corporation	DIODE, ZENER, 27V, 1000MW, %, AE Voltage - Zener (Nom) (Vz): 27V Tolerance: ±7.03% Power - Max: 1W Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 1µA @ 20V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고7,904
BZD27C120P MTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 120V, 1000MW, %, S Voltage - Zener (Nom) (Vz): 120.5V Tolerance: ±5.39% Power - Max: 1W Impedance (Max) (Zzt): 300 Ohms Current - Reverse Leakage @ Vr: 1µA @ 91V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고7,168
1N4749A B0G	Taiwan Semiconductor Corporation	DIODE, ZENER, 24V, 1000MW, 5%, D Voltage - Zener (Nom) (Vz): 24V Tolerance: ±5% Power - Max: 1W Impedance (Max) (Zzt): 25 Ohms Current - Reverse Leakage @ Vr: 5µA @ 18.2V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41)	패키지: DO-204AL, DO-41, Axial	재고3,552
BZD17C47P MTG	Taiwan Semiconductor Corporation	DIODE, ZENER, 47V, 800MW, %, SUB Voltage - Zener (Nom) (Vz): 47V Tolerance: ±6.38% Power - Max: 800mW Impedance (Max) (Zzt): 45 Ohms Current - Reverse Leakage @ Vr: 1µA @ 36V Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA	패키지: DO-219AB	재고4,080
BZX585B8V2 RSG	Taiwan Semiconductor Corporation	DIODE, ZENER, 8.2V, 200MW, 2%, S Voltage - Zener (Nom) (Vz): 8.2V Tolerance: ±2% Power - Max: 200mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 630nA @ 5V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523F	패키지: SC-79, SOD-523	재고4,160
GBPC2506 T0G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 25A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A Current - Reverse Leakage @ Vr: 5µA @ 600V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: QC Terminal Package / Case: 4-Square, GBPC Supplier Device Package: GBPC	패키지: 4-Square, GBPC	재고7,136
TS8P07G D2G	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 8A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Current - Reverse Leakage @ Vr: 10µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, TS-6P Supplier Device Package: TS-6P	패키지: 4-SIP, TS-6P	재고2,896
DBLS207GHRDG	Taiwan Semiconductor Corporation	BRIDGE RECTIFIER, STANDARD, 2A, Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 1000V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A Current - Reverse Leakage @ Vr: 2µA @ 1000V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-SMD, Gull Wing Supplier Device Package: DBLS	패키지: 4-SMD, Gull Wing	재고2,560
MMSZ4684-RHG	Taiwan Semiconductor Corporation	SOD-123, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 3.3 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 7.5 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: -	Request a Quote
S5JH	Taiwan Semiconductor Corporation	5A, 600V, STANDARD RECOVERY RECT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고9,000
SKL13B	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	패키지: -	Request a Quote
HS2MALH	Taiwan Semiconductor Corporation	75NS, 2A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고42,000
BZT52C7V5S	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 7.5 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 15 Ohms Current - Reverse Leakage @ Vr: 900 nA @ 5 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	Request a Quote
MBRS10100CT	Taiwan Semiconductor Corporation	DIODE ARR SCHOT 100V 10A TO263AB Diode Configuration: 1 Pair Common Cathode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io) (per Diode): 10A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Operating Temperature - Junction: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK)	패키지: -	Request a Quote
BZT52C36S-R9G	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, SMALL SIGNA Voltage - Zener (Nom) (Vz): 36 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 90 Ohms Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	재고30,000
SRAS860	Taiwan Semiconductor Corporation	8A, 60V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
HERAF804GH	Taiwan Semiconductor Corporation	50NS, 8A, 300V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 300 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고3,000
KBL402G-T0	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 4A KBL Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 4 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, KBL Supplier Device Package: KBL	패키지: -	Request a Quote
BZS55C18-RAG	Taiwan Semiconductor Corporation	DIODE ZENER 18V 500MW 1206 Voltage - Zener (Nom) (Vz): 18 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 50 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 13 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 1206 (3216 Metric) Supplier Device Package: 1206	패키지: -	Request a Quote
GBU805	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 8A GBU Diode Type: Single Phase Technology: Standard Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 4-SIP, GBU Supplier Device Package: GBU	패키지: -	재고2,559
HT18GH	Taiwan Semiconductor Corporation	75NS, 1A, 1000V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고15,000
M3Z3V0C	Taiwan Semiconductor Corporation	SOD-323F, 200MW, 5%, ZENER DIODE Voltage - Zener (Nom) (Vz): 3 V Tolerance: ±5% Power - Max: 200 mW Impedance (Max) (Zzt): 85 Ohms Current - Reverse Leakage @ Vr: 50 µA @ 1 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: SOD-323F	패키지: -	Request a Quote
BZT55C6V8	Taiwan Semiconductor Corporation	QMMELF, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 6.8 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): 8 Ohms Current - Reverse Leakage @ Vr: 100 nA @ 3 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Operating Temperature: -65°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-80 Variant Supplier Device Package: QMMELF	패키지: -	Request a Quote
MMSZ4701-RHG	Taiwan Semiconductor Corporation	SOD-123, 500MW, 5%, SMALL SIGNAL Voltage - Zener (Nom) (Vz): 14 V Tolerance: ±5% Power - Max: 500 mW Impedance (Max) (Zzt): - Current - Reverse Leakage @ Vr: 1 µA @ 10.6 V Voltage - Forward (Vf) (Max) @ If: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123	패키지: -	Request a Quote
SS22M	Taiwan Semiconductor Corporation	2A, 20V, SCHOTTKY RECTIFIER Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 20 V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고72,000
SRF10200	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 10A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	Request a Quote
HS2JAF-T	Taiwan Semiconductor Corporation	75NS, 2A, 600V, HIGH EFFICIENT R Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	패키지: -	재고22,500