이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 15A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고5,584 |
|
MOSFET (Metal Oxide) | 500V | 15A (Ta) | 10V | 4V @ 1mA | 40nC @ 10V | 2300pF @ 25V | ±30V | - | 50W (Tc) | 300 mOhm @ 7.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 8A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고7,248 |
|
MOSFET (Metal Oxide) | 100V | 8A (Ta) | 10V | 4V @ 1mA | 12.9nC @ 10V | 530pF @ 10V | ±20V | - | 18W (Tc) | 120 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 40A TO-220AB
|
패키지: TO-220-3 |
재고5,248 |
|
MOSFET (Metal Oxide) | 100V | 40A (Ta) | - | 4V @ 1mA | 84nC @ 10V | 4000pF @ 10V | - | - | - | 15 mOhm @ 20A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 10A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고6,656 |
|
MOSFET (Metal Oxide) | 500V | 10A (Ta) | 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 45W (Tc) | 720 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 11A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고7,056 |
|
MOSFET (Metal Oxide) | 450V | 11A (Ta) | 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 40W (Tc) | 620 mOhm @ 5.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 9.7A 5DFN
|
패키지: 4-VSFN Exposed Pad |
재고3,728 |
|
MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | ±30V | Super Junction | 88.3W (Tc) | 380 mOhm @ 4.9A, 10V | 150°C (TJ) | Surface Mount | 5-DFN (8x8) | 4-VSFN Exposed Pad |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 6.2A IPAK
|
패키지: TO-251-3 Stub Leads, IPak |
재고7,536 |
|
MOSFET (Metal Oxide) | 600V | 6.2A (Ta) | 10V | 3.7V @ 310µA | 12nC @ 10V | 390pF @ 300V | ±30V | Super Junction | 60W (Tc) | 820 mOhm @ 3.1A, 10V | 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Stub Leads, IPak |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7.5A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고3,888 |
|
MOSFET (Metal Oxide) | 600V | 7.5A (Ta) | 10V | 4V @ 1mA | 20nC @ 10V | 1050pF @ 25V | ±30V | - | 45W (Tc) | 1 Ohm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7.5A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고5,376 |
|
MOSFET (Metal Oxide) | 550V | 7.5A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | ±30V | - | 40W (Tc) | 1.07 Ohm @ 3.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 46A TO-220
|
패키지: TO-220-3 Full Pack, Isolated Tab |
재고5,696 |
|
MOSFET (Metal Oxide) | 80V | 46A (Tc) | 10V | 4V @ 500µA | 37nC @ 10V | 2500pF @ 40V | ±20V | - | 35W (Tc) | 8.4 mOhm @ 23A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 60A TO-220AB
|
패키지: TO-220-3 |
재고3,024 |
|
MOSFET (Metal Oxide) | 75V | 60A | - | - | 75nC @ 10V | - | - | - | - | 9 mOhm @ 30A, 10V | - | Through Hole | TO-220-3 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 42A TO-220
|
패키지: TO-220-3 Full Pack, Isolated Tab |
재고7,520 |
|
MOSFET (Metal Oxide) | 120V | 42A (Tc) | 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | ±20V | - | 35W (Tc) | 9.4 mOhm @ 21A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 9A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고6,528 |
|
MOSFET (Metal Oxide) | 450V | 9A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | ±30V | - | 40W (Tc) | 770 mOhm @ 4.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 7.5A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고3,568 |
|
MOSFET (Metal Oxide) | 450V | 7.5A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 12A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고5,184 |
|
MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 4V @ 1mA | 38nC @ 10V | 1800pF @ 25V | ±30V | - | 45W (Tc) | 550 mOhm @ 6A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 35A TO-220AB
|
패키지: TO-220-3 |
재고5,760 |
|
- | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고3,024 |
|
MOSFET (Metal Oxide) | 650V | 5A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | ±30V | - | 40W (Tc) | 1.43 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 3A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고7,200 |
|
MOSFET (Metal Oxide) | 650V | 3A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 35W (Tc) | 2.25 Ohm @ 1.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7.5A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고2,192 |
|
MOSFET (Metal Oxide) | 500V | 7.5A (Ta) | 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | ±30V | - | 35W (Tc) | 1.04 Ohm @ 3.8A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 8A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고5,296 |
|
MOSFET (Metal Oxide) | 450V | 8A (Ta) | 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | ±30V | - | 35W (Tc) | 900 mOhm @ 4A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고2,240 |
|
MOSFET (Metal Oxide) | 550V | 7A (Ta) | 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | ±30V | - | 35W (Tc) | 1.25 Ohm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 4.5A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고3,248 |
|
MOSFET (Metal Oxide) | 650V | 4.5A (Ta) | 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | ±30V | - | 35W (Tc) | 1.67 Ohm @ 2.3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 5A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고3,392 |
|
MOSFET (Metal Oxide) | 600V | 5A (Ta) | 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | ±30V | - | 35W (Tc) | 1.43 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 2.5A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고2,224 |
|
MOSFET (Metal Oxide) | 650V | 2.5A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 490pF @ 25V | ±30V | - | 35W (Tc) | 2.51 Ohm @ 1.3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 20A D2PAK
|
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
재고3,520 |
|
MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 3.7V @ 1mA | 48nC @ 10V | 1680pF @ 300V | ±30V | Super Junction | 165W (Tc) | 155 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 120V 56A TO-220
|
패키지: TO-220-3 |
재고5,248 |
|
MOSFET (Metal Oxide) | 120V | 56A (Ta) | 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | ±20V | - | 168W (Tc) | 7 mOhm @ 28A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고2,336 |
|
MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | ±30V | - | 35W (Tc) | 1.22 Ohm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A TO-220SIS
|
패키지: TO-220-3 Full Pack |
재고2,128 |
|
MOSFET (Metal Oxide) | 525V | 6A (Ta) | 10V | 4.4V @ 1mA | 12nC @ 10V | 600pF @ 25V | ±30V | - | 35W (Tc) | 1.3 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |