Vishay Semiconductor Diodes Division 제품

VS-ST1200C20K0L

Vishay Semiconductor Diodes Division

SCR 2000V 3080A K-PUK

• Voltage - Off State: 2000V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.73V
• Current - On State (It (AV)) (Max): 1650A
• Current - On State (It (RMS)) (Max): 3080A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 25700A, 26900A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AC, K-PUK, A-24
• Supplier Device Package: A-24 (K-Puk)

패키지: TO-200AC, K-PUK, A-24

ZM4739A-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 9.1V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 7V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB

패키지: DO-213AB, MELF (Glass)

BZX85B7V5-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 7.5V 1.3W DO41

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±2%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 3 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 4.5V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

패키지: DO-204AL, DO-41, Axial

GP10J-4005-M3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

AS3PGHM3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 2.1A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2.1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.2µs
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 37pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

BY229X-200HE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.85V @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 145ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

S1PK-E3/85A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO220AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Current - Reverse Leakage @ Vr: 1µA @ 800V
• Capacitance @ Vr, F: 6pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

VS-10BQ030TRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 1A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 420mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

S3AHE3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

GP10-4007E-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

S4PK-M3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 4A TO277A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 30pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

GP02-40-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 4KV 250MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 4000V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 4000V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

GP10G-4004E-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -

패키지: DO-204AL, DO-41, Axial

BAW27-TR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 60V 600MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 600mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 400mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 6ns
• Current - Reverse Leakage @ Vr: 100nA @ 60V
• Capacitance @ Vr, F: 4pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

VS-VSKD250-12PBF

Vishay Semiconductor Diodes Division

DIODE GEN 1.2KV 125A MAGNAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 125A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1200V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: MAGN-A-PAK (2)
• Supplier Device Package: MAGN-A-PAK?

패키지: MAGN-A-PAK (2)

VS-10CTQ150S-M3

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 150V TO263

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

V20202C-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 20A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 200V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

GSIB2520-E3/45

Vishay Semiconductor Diodes Division

DIODE 25A 200V GSIB-5S

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 12.5A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GSIB-5S
• Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

B80C1000G-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 1A 125V WOG

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 125V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Current - Reverse Leakage @ Vr: 10µA @ 125V
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Circular, WOG
• Supplier Device Package: WOG

패키지: 4-Circular, WOG

SMAJ10CHE3/61

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 18.8VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 18.8V
• Current - Peak Pulse (10/1000µs): 21.3A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

SMA5J24-E3/61

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 43VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 43V
• Current - Peak Pulse (10/1000µs): 11.6A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

SA43CA-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 43VWM 69.4VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 43V
• Voltage - Breakdown (Min): 47.8V
• Voltage - Clamping (Max) @ Ipp: 69.4V
• Current - Peak Pulse (10/1000µs): 7.2A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

SMCG15AHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 15VWM 24.4VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 61.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

패키지: DO-215AB, SMC Gull Wing

SMCG8.5A-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 8.5VWM 14.4VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.5V
• Voltage - Breakdown (Min): 9.44V
• Voltage - Clamping (Max) @ Ipp: 14.4V
• Current - Peak Pulse (10/1000µs): 104.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

패키지: DO-215AB, SMC Gull Wing

SMBG9.0CA-M3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 9VWM 15.4VC DO-215AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 15.4V
• Current - Peak Pulse (10/1000µs): 39A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

패키지: DO-215AA, SMB Gull Wing

VTVS40GSMF-M3-08

Vishay Semiconductor Diodes Division

TVS DIODE 67VC 5.87A DO219AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 39.6V
• Voltage - Breakdown (Min): 46.11V
• Voltage - Clamping (Max) @ Ipp: 67V
• Current - Peak Pulse (10/1000µs): 5.87A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 309pF @ 1MHz
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

패키지: DO-219AB

TGL41-16A-E3/96

Vishay Semiconductor Diodes Division

TVS DIODE 13.6VWM 22.5VC MELF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13.6V
• Voltage - Breakdown (Min): 15.2V
• Voltage - Clamping (Max) @ Ipp: 22.5V
• Current - Peak Pulse (10/1000µs): 17.8A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

패키지: DO-213AB, MELF

P4SMA56CAHE3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 47.8VWM 77VC DO-214AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 47.8V
• Voltage - Breakdown (Min): 53.2V
• Voltage - Clamping (Max) @ Ipp: 77V
• Current - Peak Pulse (10/1000µs): 5.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA