Vishay Semiconductor Diodes Division 제품

VS-40TPS12PBF

Vishay Semiconductor Diodes Division

SCR PHASE CTRL 1200V 35A TO247AC

• Voltage - Off State: 1200V
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Voltage - On State (Vtm) (Max): 1.85V
• Current - On State (It (AV)) (Max): 35A
• Current - On State (It (RMS)) (Max): 55A
• Current - Hold (Ih) (Max): 150mA
• Current - Off State (Max): 500µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

IRKL41/10A

Vishay Semiconductor Diodes Division

SCR DBL HISCR 1000V 45A ADDAPAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1000V
• Current - On State (It (AV)) (Max): 45A
• Current - On State (It (RMS)) (Max): 100A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 2)

패키지: ADD-A-PAK (3 + 2)

ZMM5263B-13

Vishay Semiconductor Diodes Division

DIODE ZENER SOD80 MINIMELF

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: DO-213AA
• Supplier Device Package: DO-213AA

패키지: DO-213AA

BZX55F5V6-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 5.6V 500MW DO35

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

BZD27B12P-M3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 3µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

패키지: DO-219AB

TZMC1V0-M-08

Vishay Semiconductor Diodes Division

DIODE ZENER 1V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

패키지: DO-213AC, MINI-MELF, SOD-80

BZX384B3V6-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.6V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

GDZ6V2B-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 6.2V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

AZ23C12-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 300MW SOT23

• Configuration: 1 Pair Common Anode
• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 9V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

1N5620GPHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 500nA @ 800V
• Capacitance @ Vr, F: 20pF @ 12V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AC, DO-15, Axial

FES8JT/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2

HFA90NH40

Vishay Semiconductor Diodes Division

DIODE MODULE 400V 90A HALF-PAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 90A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 90A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Current - Reverse Leakage @ Vr: 6µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67 HALF-PAK
• Supplier Device Package: HALF-PAK
• Operating Temperature - Junction: -

패키지: D-67 HALF-PAK

AS1PMHM3/85A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.5A DO220

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1.5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-220AA

UG4C-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 4A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-201AD, Axial

SS2P3L-M3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 2A DO220AA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 30V
• Capacitance @ Vr, F: 130pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-220AA

VS-MBR3045WTPBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 760mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

VS-10CTQ150-1-M3

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 150V TO262

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 930mV @ 5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 150V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262AA

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

VS-4CSH01-M3/86A

Vishay Semiconductor Diodes Division

DIODE HFAST REC 100V 2A TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 16ns
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

패키지: TO-277, 3-PowerDFN

GBU4A-E3/51

Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 50V GPP GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

패키지: 4-SIP, GBU

G3SBA20-E3/51

Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 200V GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 2.3A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

패키지: 4-SIP, GBU

1.5KA39HE3/51

Vishay Semiconductor Diodes Division

TVS DIODE 56.4VC 26.6A 1.5KA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 31.6V
• Voltage - Breakdown (Min): 35.1V
• Voltage - Clamping (Max) @ Ipp: 56.4V
• Current - Peak Pulse (10/1000µs): 26.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KA

패키지: DO-201AA, DO-27, Axial

P6KE68HE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 55.1VWM 98VC DO204AC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 55.1V
• Voltage - Breakdown (Min): 61.2V
• Voltage - Clamping (Max) @ Ipp: 98V
• Current - Peak Pulse (10/1000µs): 6.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

1.5KE82HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 66.4VWM 118VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 66.4V
• Voltage - Breakdown (Min): 73.8V
• Voltage - Clamping (Max) @ Ipp: 118V
• Current - Peak Pulse (10/1000µs): 12.7A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

패키지: DO-201AA, DO-27, Axial

TPSMB24A801HE3/5BT

Vishay Semiconductor Diodes Division

TVS DIODE 33.2VC 18.1A DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 20.5V
• Voltage - Breakdown (Min): 22.8V
• Voltage - Clamping (Max) @ Ipp: 33.2V
• Current - Peak Pulse (10/1000µs): 18.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: DO-214AA, SMB

TPSMP12AHM3/84A

Vishay Semiconductor Diodes Division

TVS DIODE 10.2VWM DO214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10.2V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 18A
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

패키지: DO-220AA

SMBJ12CHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 12VWM 22VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 12V
• Voltage - Breakdown (Min): 13.3V
• Voltage - Clamping (Max) @ Ipp: 22V
• Current - Peak Pulse (10/1000µs): 27.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB

BZW04-102-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 102VWM 165VC DO204AL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 102V
• Voltage - Breakdown (Min): 114V
• Voltage - Clamping (Max) @ Ipp: 165V
• Current - Peak Pulse (10/1000µs): 2.4A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

SM15T33CA-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 28.2VWM 45.7VC DO-214A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 28.2V
• Voltage - Breakdown (Min): 31.4V
• Voltage - Clamping (Max) @ Ipp: 45.7V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC