Vishay Semiconductor Diodes Division 제품

TZMC1V0-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 1V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 8 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

패키지: DO-213AC, MINI-MELF, SOD-80

BZX384C62-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 62V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 215 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 43.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

BZX84B30-HE3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 30V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±2%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 50nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

TZQ5253B-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 25V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 25V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 35 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 19V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

패키지: SOD-80 Variant

DZ23C6V2-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 6.2V 300MW SOT23

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

GP10BHM3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

MBR10H50-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 10A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 710mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2

S3AHE3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: 60pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

RGP10JEHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

VS-1N1187R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 35A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 110A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 190°C

패키지: DO-203AB, DO-5, Stud

VS-30EPF02-M3

Vishay Semiconductor Diodes Division

DIODE SOFT FAST 30A TO-247

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.41V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Current - Reverse Leakage @ Vr: 100µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247AC Modified
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-247-2

VS-8TQ080STRRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 80V 8A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 720mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 550µA @ 80V
• Capacitance @ Vr, F: 500pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-15EWL06FNTRR-M3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 15A 600V DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 220ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

MBRB1060HE3_A/P

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 10A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-STPS1045BTR-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 630mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Capacitance @ Vr, F: 760pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

BY203-12STR

Vishay Semiconductor Diodes Division

DIODE AVALANCH 1.2KV 250MA SOD57

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 2.4V @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 2µA @ 700V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-57, Axial
• Supplier Device Package: SOD-57
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: SOD-57, Axial

GP10M-4007EHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -

패키지: DO-204AL, DO-41, Axial

30CTQ035

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 35V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 35V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

MBR3045WT

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 760mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

SM6S17A-E3/2D

Vishay Semiconductor Diodes Division

TVS DIODE 17VWM 27.6VC DO218AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 167A
• Power - Peak Pulse: 4600W (4.6kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-218AB
• Supplier Device Package: DO-218AB

패키지: DO-218AB

1.5KE200AHE3_A/D

Vishay Semiconductor Diodes Division

TVS DIODE 171VWM 274VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 171V
• Voltage - Breakdown (Min): 190V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 5.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

패키지: DO-201AA, DO-27, Axial

1.5KE150AHE3_A/D

Vishay Semiconductor Diodes Division

TVS DIODE 128VWM 207VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 128V
• Voltage - Breakdown (Min): 143V
• Voltage - Clamping (Max) @ Ipp: 207V
• Current - Peak Pulse (10/1000µs): 7.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

패키지: DO-201AA, DO-27, Axial

SA22CAHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 22VWM 35.5VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 22V
• Voltage - Breakdown (Min): 24.4V
• Voltage - Clamping (Max) @ Ipp: 35.5V
• Current - Peak Pulse (10/1000µs): 14.1A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

BZW04-78HE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 78VWM 125VC DO204AL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.5V
• Voltage - Clamping (Max) @ Ipp: 125V
• Current - Peak Pulse (10/1000µs): 3.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

P6SMB440AHE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 376VWM 602VC DO-214AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 376V
• Voltage - Breakdown (Min): 418V
• Voltage - Clamping (Max) @ Ipp: 602V
• Current - Peak Pulse (10/1000µs): 1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB

SMA5J26CAHE3/61

Vishay Semiconductor Diodes Division

TVS DIODE 26VWM 42.1VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 26V
• Voltage - Breakdown (Min): 28.9V
• Voltage - Clamping (Max) @ Ipp: 42.1V
• Current - Peak Pulse (10/1000µs): 11.9A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

TPSMP11AHM3_A/H

Vishay Semiconductor Diodes Division

TVS DIODE 15.6VC 19.2A DO220AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9.4V
• Voltage - Breakdown (Min): 10.5V
• Voltage - Clamping (Max) @ Ipp: 15.6V
• Current - Peak Pulse (10/1000µs): 19.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

패키지: DO-220AA

SMBJ110A-M3/52

Vishay Semiconductor Diodes Division

TVS DIODE 110VWM 177VC DO-215AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 122V
• Voltage - Clamping (Max) @ Ipp: 177V
• Current - Peak Pulse (10/1000µs): 3.4A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB