Vishay Semiconductor Diodes Division 제품

VS-ST180S06P1V

Vishay Semiconductor Diodes Division

SCR 600V 314A TO-93

• Voltage - Off State: 600V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 150mA
• Voltage - On State (Vtm) (Max): 1.75V
• Current - On State (It (AV)) (Max): 200A
• Current - On State (It (RMS)) (Max): 314A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 30mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 4200A, 4400A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AB, TO-93-4, Stud
• Supplier Device Package: TO-209AB (TO-93)

패키지: TO-209AB, TO-93-4, Stud

VSKTF200-12HK

Vishay Semiconductor Diodes Division

SCR DBL 2SCR 1200V 200A MAGNAPAK

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1200V
• Current - On State (It (AV)) (Max): 200A
• Current - On State (It (RMS)) (Max): 444A
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 7600A, 8000A
• Current - Hold (Ih) (Max): 600mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?

패키지: 3-MAGN-A-PAK?

VS-P424

Vishay Semiconductor Diodes Division

MODULE BRIDGE DBLR 40A 1000V D-1

• Structure: Bridge, Single Phase - SCRs/Diodes (Layout 3)
• Number of SCRs, Diodes: 2 SCRs, 2 Diodes
• Voltage - Off State: 1000V
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): 40A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 60mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 385A, 400A
• Current - Hold (Ih) (Max): 130mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: 8-PACE-PAK

패키지: 8-PACE-PAK

SML4734A-E3/61

Vishay Semiconductor Diodes Division

DIODE ZENER 5.6V 1W DO214AC

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

SMPZ3924B-M3/84A

Vishay Semiconductor Diodes Division

DIODE ZENER 9.1V 500MW DO220AA

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 4 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

패키지: DO-220AA

BZD27C91P-M3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219-M3

• Voltage - Zener (Nom) (Vz): 91V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 68V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

패키지: DO-219AB

BZD27C110P-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219

• Voltage - Zener (Nom) (Vz): 110V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 82V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

패키지: DO-219AB

BZT52C68-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 68V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

BZT55B7V5-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 7.5V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 7 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 5V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

패키지: SOD-80 Variant

BZT52C4V3-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 4.3V 410MW SOD123

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

BZT55B27-GS18

Vishay Semiconductor Diodes Division

DIODE ZENER 27V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 20V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

패키지: SOD-80 Variant

MMBZ5227B-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 3.6V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 3.6V
• Tolerance: ±5%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 24 Ohms
• Current - Reverse Leakage @ Vr: 15µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

VS-50WQ10FNTRPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 5.5A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 5.5A
• Voltage - Forward (Vf) (Max) @ If: 770mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 100V
• Capacitance @ Vr, F: 183pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

SRP300B-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO201AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 28pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -50°C ~ 125°C

패키지: DO-201AD, Axial

VB30120SG-E3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 120V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

V15P45-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15A 45V TO-277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 4.8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.5mA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-277, 3-PowerDFN

V12P10HM3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 3.9A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io): 3.9A
• Voltage - Forward (Vf) (Max) @ If: 830mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 400µA @ 120V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-277, 3-PowerDFN

ES2D-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 18pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

BAS33-TAP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 30V 200MA DO35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1nA @ 15V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35
• Operating Temperature - Junction: 175°C (Max)

패키지: DO-204AH, DO-35, Axial

V35PW12HM3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 35A 120V SLIMDPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 35A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 120V
• Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: SlimDPAK
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

EGP20A-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 2A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 70pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

VT2045C-M3/4W

Vishay Semiconductor Diodes Division

RECT SCHOTTKY 45V 10A TO-220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 45V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

SS10P2CLHM3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 10A 20V TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 850µA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

패키지: TO-277, 3-PowerDFN

3KASMC28AHM3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 28VWM 45.4VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 28V
• Voltage - Breakdown (Min): 31.1V
• Voltage - Clamping (Max) @ Ipp: 45.4V
• Current - Peak Pulse (10/1000µs): 66.1A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

SMA5J9.0HE3/61

Vishay Semiconductor Diodes Division

TVS DIODE 9VWM 16.9VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 9V
• Voltage - Breakdown (Min): 10V
• Voltage - Clamping (Max) @ Ipp: 16.9V
• Current - Peak Pulse (10/1000µs): 29.6A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

TMPG06-30AHE3_A/B

Vishay Semiconductor Diodes Division

TVS DIODE 41.4VC 9.7A MPG06

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 25.6V
• Voltage - Breakdown (Min): 28.5V
• Voltage - Clamping (Max) @ Ipp: 41.4V
• Current - Peak Pulse (10/1000µs): 9.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06

패키지: MPG06, Axial

SMCG10AHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 17VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.1V
• Voltage - Clamping (Max) @ Ipp: 17V
• Current - Peak Pulse (10/1000µs): 88.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

패키지: DO-215AB, SMC Gull Wing

VTVS17GSMF-M3-08

Vishay Semiconductor Diodes Division

TVS DIODE 28VC 14.21A DO219AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 16.9V
• Voltage - Breakdown (Min): 19.6V
• Voltage - Clamping (Max) @ Ipp: 28V
• Current - Peak Pulse (10/1000µs): 14.21A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 606pF @ 1MHz
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

패키지: DO-219AB