Vishay Semiconductor Diodes Division 제품

VS-25TTS08PBF

Vishay Semiconductor Diodes Division

SCR PHASE CTRL 800V 25A TO220AB

• Voltage - Off State: 800V
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 45mA
• Voltage - On State (Vtm) (Max): 1.25V
• Current - On State (It (AV)) (Max): 16A
• Current - On State (It (RMS)) (Max): 25A
• Current - Hold (Ih) (Max): 100mA
• Current - Off State (Max): 500µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

BZT52B18-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW SOD-123

• Voltage - Zener (Nom) (Vz): 18V
• Tolerance: ±2%
• Power - Max: 410mW
• Impedance (Max) (Zzt): 18 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 14V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

TZM5261B-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 47V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 47V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 105 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 36V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

패키지: DO-213AC, MINI-MELF, SOD-80

DZ23C24-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 24V 300MW SOT23

• Configuration: 1 Pair Common Cathode
• Voltage - Zener (Nom) (Vz): 24V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 18V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

15ETX06

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 32ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2

VS-71HFR140

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 70A DO203AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.46V @ 220A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4.5mA @ 1400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-203AB, DO-5, Stud

UGF8DT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A ITO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-220-2 Full Pack, Isolated Tab

AR3PKHM3_A/H

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.6A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1.6A
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: 10µA @ 800V
• Capacitance @ Vr, F: 34pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

SF5401-TR

Vishay Semiconductor Diodes Division

DIODE AVAL 3A 100V SOD-64

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-64, Axial

AU2PG-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1.6A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.9V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 42pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

AS3PD-M3/87A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2.1A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2.1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.2µs
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 37pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

VSSAF5N50-M3/6A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A DO221AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 410mV @ 2.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1.4mA @ 50V
• Capacitance @ Vr, F: 850pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-221AC, SMA Flat Leads
• Supplier Device Package: DO-221AC (SlimSMA)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: DO-221AC, SMA Flat Leads

SS16-E3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

VS-MBR1645PBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO220AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-220-2

VS-5EWX06FN-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 2.9V @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 21ns
• Current - Reverse Leakage @ Vr: 20µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

VSKD270-16

Vishay Semiconductor Diodes Division

DIODE MODULE 1.6KV 270A MAGNAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?

패키지: 3-MAGN-A-PAK?

GBU6G-M3/45

Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 6A 400V GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

패키지: 4-SIP, GBU

VS-GBPC2506W

Vishay Semiconductor Diodes Division

RECT BRIDGE 1-PH 600V 25A GBPC-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC-W
• Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

VS-2KBB20

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 200V 1.9A D-37

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 1.9A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.9V
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, 2KBB
• Supplier Device Package: 2KBB

패키지: 4-SIP, 2KBB

5KP54-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 54VWM 96.3VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 54V
• Voltage - Breakdown (Min): 60V
• Voltage - Clamping (Max) @ Ipp: 96.3V
• Current - Peak Pulse (10/1000µs): 51.9A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

패키지: P600, Axial

P6KE13CHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 10.5VWM 19VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10.5V
• Voltage - Breakdown (Min): 11.7V
• Voltage - Clamping (Max) @ Ipp: 19V
• Current - Peak Pulse (10/1000µs): 31.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

1.5KE110-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 89.2VWM 158VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 89.2V
• Voltage - Breakdown (Min): 99V
• Voltage - Clamping (Max) @ Ipp: 158V
• Current - Peak Pulse (10/1000µs): 9.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

패키지: DO-201AA, DO-27, Axial

TPSMP43HM3/84A

Vishay Semiconductor Diodes Division

TVS DIODE 34.8VWM DO220AA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 34.8V
• Voltage - Breakdown (Min): 38.7V
• Voltage - Clamping (Max) @ Ipp: 61.9V
• Current - Peak Pulse (10/1000µs): 6.5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-220AA
• Supplier Device Package: DO-220AA (SMP)

패키지: DO-220AA

SMAJ24CHE3/61

Vishay Semiconductor Diodes Division

TVS DIODE 24VWM 43VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 43V
• Current - Peak Pulse (10/1000µs): 9.3A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

GSOT12C-HG3-18

Vishay Semiconductor Diodes Division

TVS DIODE 12VWM 26VC SOT23

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12V (Max)
• Voltage - Breakdown (Min): 13.5V
• Voltage - Clamping (Max) @ Ipp: 26V
• Current - Peak Pulse (10/1000µs): 12A (8/20µs)
• Power - Peak Pulse: 312W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 115pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

1.5SMC56CAHE3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 47.8VWM 77VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 47.8V
• Voltage - Breakdown (Min): 53.2V
• Voltage - Clamping (Max) @ Ipp: 77V
• Current - Peak Pulse (10/1000µs): 19.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

SMBG120A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 120VWM 193VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 3.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AA, SMB Gull Wing
• Supplier Device Package: DO-215AA (SMBG)

패키지: DO-215AA, SMB Gull Wing

TGL41-36A-E3/97

Vishay Semiconductor Diodes Division

TVS DIODE 30.8VWM 49.9VC MELF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 8A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

패키지: DO-213AB, MELF