페이지 305 - Vishay Semiconductor Diodes Division 제품 | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-827
Language Translation

* Please refer to the English Version as our Official Version.

Vishay Semiconductor Diodes Division 제품

기록 39,746
페이지  305/1,420
이미지
부품 번호
제조업체
설명
패키지
재고
수량
ST2100C38R0
Vishay Semiconductor Diodes Division

SCR PHASE CONT 3800V 3850A R-PUK

  • Voltage - Off State: 3800V
  • Voltage - Gate Trigger (Vgt) (Max): 4V
  • Current - Gate Trigger (Igt) (Max): 400mA
  • Voltage - On State (Vtm) (Max): 1.875V
  • Current - On State (It (AV)) (Max): 1770A
  • Current - On State (It (RMS)) (Max): 3850A
  • Current - Hold (Ih) (Max): -
  • Current - Off State (Max): 250mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 36250A, 38000A
  • SCR Type: Standard Recovery
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: R-PUK
  • Supplier Device Package: R-Puk
패키지: R-PUK
재고3,152
SMZJ3807A-E3/5B
Vishay Semiconductor Diodes Division

DIODE ZENER 56V 1.5W DO214AA

  • Voltage - Zener (Nom) (Vz): 56V
  • Tolerance: ±10%
  • Power - Max: 1.5W
  • Impedance (Max) (Zzt): 86 Ohms
  • Current - Reverse Leakage @ Vr: 5µA @ 42.6V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMBJ)
패키지: DO-214AA, SMB
재고3,504
BZD27C47P-M3-08
Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219-M3

  • Voltage - Zener (Nom) (Vz): 47V
  • Tolerance: -
  • Power - Max: 800mW
  • Impedance (Max) (Zzt): 45 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 36V
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
패키지: DO-219AB
재고3,392
GDZ6V2B-HG3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 6.2V 200MW SOD323

  • Voltage - Zener (Nom) (Vz): 6.2V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 60 Ohms
  • Current - Reverse Leakage @ Vr: 1µA @ 3V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
패키지: SC-76, SOD-323
재고7,792
MMBZ5236C-G3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 7.5V 225MW SOT23-3

  • Voltage - Zener (Nom) (Vz): 7.5V
  • Tolerance: ±2%
  • Power - Max: 225mW
  • Impedance (Max) (Zzt): 6 Ohms
  • Current - Reverse Leakage @ Vr: 3µA @ 6V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고6,128
BZX384C75-G3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 75V 200MW SOD323

  • Voltage - Zener (Nom) (Vz): 75V
  • Tolerance: ±5%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 255 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 52.5V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
패키지: SC-76, SOD-323
재고7,936
MMSZ4695-HE3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 8.7V 500MW SOD123

  • Voltage - Zener (Nom) (Vz): 8.7V
  • Tolerance: ±5%
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): -
  • Current - Reverse Leakage @ Vr: 1µA @ 6.6V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
패키지: SOD-123
재고2,592
BZX384B39-E3-08
Vishay Semiconductor Diodes Division

DIODE ZENER 39V 200MW SOD323

  • Voltage - Zener (Nom) (Vz): 39V
  • Tolerance: ±2%
  • Power - Max: 200mW
  • Impedance (Max) (Zzt): 130 Ohms
  • Current - Reverse Leakage @ Vr: 50nA @ 27.3V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
패키지: SC-76, SOD-323
재고2,480
BZX84C2V4-G3-18
Vishay Semiconductor Diodes Division

DIODE ZENER 2.4V 300MW SOT23-3

  • Voltage - Zener (Nom) (Vz): 2.4V
  • Tolerance: ±5%
  • Power - Max: 300mW
  • Impedance (Max) (Zzt): 100 Ohms
  • Current - Reverse Leakage @ Vr: 50µA @ 1V
  • Voltage - Forward (Vf) (Max) @ If: -
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
패키지: TO-236-3, SC-59, SOT-23-3
재고2,656
BZM55C51-TR3
Vishay Semiconductor Diodes Division

DIODE ZENER 500MW MICROMELF

  • Voltage - Zener (Nom) (Vz): 51V
  • Tolerance: -
  • Power - Max: 500mW
  • Impedance (Max) (Zzt): 700 Ohms
  • Current - Reverse Leakage @ Vr: 100nA @ 39V
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
  • Operating Temperature: -65°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, No Lead
  • Supplier Device Package: MicroMELF
패키지: 2-SMD, No Lead
재고6,688
RS3KHE3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고2,576
ES3AHE3/9AT
Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AB, SMC
재고5,840
VS-T110HF120
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 110A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 110A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
패키지: D-55 T-Module
재고3,264
VBT3045BP-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 45V TO-263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45V
  • Current - Average Rectified (Io): 30A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 45V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: -40°C ~ 150°C
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,344
S2KHE3_A/H
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: 16pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
패키지: DO-214AA, SMB
재고5,872
RGL41M/1
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
패키지: DO-213AB, MELF (Glass)
재고5,792
hot VS-EPU6006LHN3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 60A TO-247 L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 110ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD
  • Operating Temperature - Junction: -55°C ~ 175°C
패키지: TO-247-2
재고9,036
V60DM120CHM3/I
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 30A TO263AC

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io) (per Diode): 30A
  • Voltage - Forward (Vf) (Max) @ If: 970mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 700µA @ 120V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab) Variant
  • Supplier Device Package: TO-263AC (SMPD)
패키지: TO-263-3, D2Pak (2 Leads + Tab) Variant
재고3,392
VB20100C-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 100V TO-263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 100V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고7,504
VB20100C-M3/8W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A 100V TO-263AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 10A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 800µA @ 100V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
재고4,256
BYQ28EF-100-E3/45
Vishay Semiconductor Diodes Division

DIODE ARRAY GP 100V 5A ITO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
패키지: TO-220-3 Full Pack, Isolated Tab
재고6,352
GBU8J-E3/45
Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 8A 600V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
패키지: 4-SIP, GBU
재고7,152
hot TPSMA22AHE3/61T
Vishay Semiconductor Diodes Division

TVS DIODE 18.8VWM 30.6VC SMA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 18.8V
  • Voltage - Breakdown (Min): 20.9V
  • Voltage - Clamping (Max) @ Ipp: 30.6V
  • Current - Peak Pulse (10/1000µs): 13.1A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -65°C ~ 185°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
패키지: DO-214AC, SMA
재고86,400
hot SM6S14A-E3/2D
Vishay Semiconductor Diodes Division

TVS DIODE 14VWM 23.2VC DO218AB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 14V
  • Voltage - Breakdown (Min): 15.6V
  • Voltage - Clamping (Max) @ Ipp: 23.2V
  • Current - Peak Pulse (10/1000µs): 198A
  • Power - Peak Pulse: 4600W (4.6kW)
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-218AB
  • Supplier Device Package: DO-218AB
패키지: DO-218AB
재고89,760
SA75AHE3/54
Vishay Semiconductor Diodes Division

TVS DIODE 75VWM 121VC DO204AC

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 75V
  • Voltage - Breakdown (Min): 83.3V
  • Voltage - Clamping (Max) @ Ipp: 121V
  • Current - Peak Pulse (10/1000µs): 4.1A
  • Power - Peak Pulse: 500W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
패키지: DO-204AC, DO-15, Axial
재고5,076
P4KE75A-E3/73
Vishay Semiconductor Diodes Division

TVS DIODE 64.1VWM 103VC AXIAL

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 64.1V
  • Voltage - Breakdown (Min): 71.3V
  • Voltage - Clamping (Max) @ Ipp: 103V
  • Current - Peak Pulse (10/1000µs): 3.9A
  • Power - Peak Pulse: 400W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
패키지: DO-204AL, DO-41, Axial
재고6,966
SMBG11AHE3/5B
Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 18.2VC SMB

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 11V
  • Voltage - Breakdown (Min): 12.2V
  • Voltage - Clamping (Max) @ Ipp: 18.2V
  • Current - Peak Pulse (10/1000µs): 33A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: Automotive
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AA, SMB Gull Wing
  • Supplier Device Package: DO-215AA (SMBG)
패키지: DO-215AA, SMB Gull Wing
재고3,168
SMBJ7.5A-M3/5B
Vishay Semiconductor Diodes Division

TVS DIODE 7.5VWM 12.9VC DO-215AA

  • Type: Zener
  • Unidirectional Channels: 1
  • Bidirectional Channels: -
  • Voltage - Reverse Standoff (Typ): 7.5V
  • Voltage - Breakdown (Min): 8.33V
  • Voltage - Clamping (Max) @ Ipp: 12.9V
  • Current - Peak Pulse (10/1000µs): 46.5A
  • Power - Peak Pulse: 600W
  • Power Line Protection: No
  • Applications: General Purpose
  • Capacitance @ Frequency: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMBJ)
패키지: DO-214AA, SMB
재고6,120