Vishay Semiconductor Diodes Division 제품

VS-ST730C16L1L

Vishay Semiconductor Diodes Division

SCR 1600V 2000A B-PUK

• Voltage - Off State: 1600V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.62V
• Current - On State (It (AV)) (Max): 990A
• Current - On State (It (RMS)) (Max): 2000A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 80mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 15700A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AC, B-PUK
• Supplier Device Package: TO-200AC, B-PUK

패키지: TO-200AC, B-PUK

VS-ST730C20L1L

Vishay Semiconductor Diodes Division

SCR 2000V 2000A B-PUK

• Voltage - Off State: 2000V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.62V
• Current - On State (It (AV)) (Max): 990A
• Current - On State (It (RMS)) (Max): 2000A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 80mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 15700A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AC, B-PUK
• Supplier Device Package: TO-200AC, B-PUK

패키지: TO-200AC, B-PUK

IRKL92/16A

Vishay Semiconductor Diodes Division

SCR DBL HISCR 2000V 90A ADDAPAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 95A
• Current - On State (It (RMS)) (Max): 210A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1785A, 1870A
• Current - Hold (Ih) (Max): 250mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 2)

패키지: ADD-A-PAK (3 + 2)

BZX84C3V0-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 3V 300MW SOT23-3

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 300mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

TLZ13A-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 13V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 13V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 40nA @ 11.5V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

패키지: DO-213AC, MINI-MELF, SOD-80

BZX55C6V2-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 6.2V 500MW DO35

• Voltage - Zener (Nom) (Vz): 6.2V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 10 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

1N5624GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURPOSE DO204AC

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

패키지: -

LL101B-7

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 30MA SOD80

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 30mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 400mV @ 1mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 1ns
• Current - Reverse Leakage @ Vr: 200nA @ 40V
• Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF
• Operating Temperature - Junction: 125°C (Max)

패키지: DO-213AC, MINI-MELF, SOD-80

VS-SD1553C18S30K

Vishay Semiconductor Diodes Division

DIODE MODULE 1.8KV 1650A DO200AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io): 1650A
• Voltage - Forward (Vf) (Max) @ If: 2.6V @ 4000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 75mA @ 1800V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AC, K-PUK
• Supplier Device Package: DO-200AC, K-PUK
• Operating Temperature - Junction: -

패키지: DO-200AC, K-PUK

VS-40HFL100S05M

Vishay Semiconductor Diodes Division

DIODE STD REC 40A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.95V @ 125.6A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

FESB16GT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 16A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 400V
• Capacitance @ Vr, F: 175pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AR4PDHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 2A TO277A

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 140ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Capacitance @ Vr, F: 77pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

BYM07-300HE3/83

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.35V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AA (Glass)

GL34D-E3/83

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 500mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 4pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AA (Glass)

RMPG06K-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1A MPG06

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: MPG06, Axial

MSE07PJHM3/89A

Vishay Semiconductor Diodes Division

DIODE GP 600V 700MA MICROSMP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 1.08V @ 700mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 780ns
• Current - Reverse Leakage @ Vr: 1µA @ 600V
• Capacitance @ Vr, F: 5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: MicroSMP
• Supplier Device Package: MicroSMP
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: MicroSMP

403CMQ080

Vishay Semiconductor Diodes Division

DIODE MODULE 80V 200A TO244AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 830mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 6mA @ 80V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

패키지: TO-244AB

VS-MBRB2090CTPBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 90V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 90V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

U30BCT-E3/4W

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 100V 15A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45ns
• Current - Reverse Leakage @ Vr: 20µA @ 100V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

VSIB460-E3/45

Vishay Semiconductor Diodes Division

DIODE 4A 600V SGL BRIDGE 4SIP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 2.3A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GSIB-5S
• Supplier Device Package: GSIB-5S

패키지: 4-SIP, GSIB-5S

SA6.5C-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 6.5VWM 12.3VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 6.5V
• Voltage - Breakdown (Min): 7.22V
• Voltage - Clamping (Max) @ Ipp: 12.3V
• Current - Peak Pulse (10/1000µs): 40.7A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

1.5KE250C-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 202VWM 360VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 202V
• Voltage - Breakdown (Min): 225V
• Voltage - Clamping (Max) @ Ipp: 360V
• Current - Peak Pulse (10/1000µs): 4.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

패키지: DO-201AA, DO-27, Axial

3KASMC26HE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 26VWM 46.6VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 26V
• Voltage - Breakdown (Min): 28.9V
• Voltage - Clamping (Max) @ Ipp: 46.6V
• Current - Peak Pulse (10/1000µs): 64.4A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

3KASMC40HE3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 40VWM 71.4VC DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40V
• Voltage - Breakdown (Min): 44.4V
• Voltage - Clamping (Max) @ Ipp: 71.4V
• Current - Peak Pulse (10/1000µs): 42A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

P6KE36CAHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 30.8VWM 49.9VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

P4KE180A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 154VWM 246VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 154V
• Voltage - Breakdown (Min): 171V
• Voltage - Clamping (Max) @ Ipp: 246V
• Current - Peak Pulse (10/1000µs): 1.6A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

1.5SMC75A-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 64.1VWM 104VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 64.1V
• Voltage - Breakdown (Min): 71.3V
• Voltage - Clamping (Max) @ Ipp: 104V
• Current - Peak Pulse (10/1000µs): 14.6A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

SMAJ36CAHE3/61

Vishay Semiconductor Diodes Division

TVS DIODE 36VWM 58.1VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 36V
• Voltage - Breakdown (Min): 40V
• Voltage - Clamping (Max) @ Ipp: 58.1V
• Current - Peak Pulse (10/1000µs): 6.9A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA