Vishay Semiconductor Diodes Division 제품

VS-GT50TP60N

Vishay Semiconductor Diodes Division

IGBT 600V 85A 208W INT-A-PAK

• IGBT Type: Trench
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 85A
• Power - Max: 208W
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector Cutoff (Max): 1mA
• Input Capacitance (Cies) @ Vce: 3.03nF @ 30V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Supplier Device Package: INT-A-PAK

패키지: INT-A-PAK (3 + 4)

1N5226B-T

Vishay Semiconductor Diodes Division

DIODE ZENER 500MW DO35

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1600 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

BZX55F36-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 500MW DO35

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±1%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

VLZ5V6-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 5.6V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 5.6V
• Tolerance: -
• Power - Max: 500mW
• Impedance (Max) (Zzt): 13 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SOD-80 Variant
• Supplier Device Package: SOD-80 QuadroMELF

패키지: SOD-80 Variant

MMBZ5241C-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 11V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±2%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

TZM5260B-GS08

Vishay Semiconductor Diodes Division

DIODE ZENER 43V 500MW SOD80

• Voltage - Zener (Nom) (Vz): 43V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 93 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 33V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF

패키지: DO-213AC, MINI-MELF, SOD-80

1N5246C-TAP

Vishay Semiconductor Diodes Division

DIODE ZENER 16V 500MW DO35

• Voltage - Zener (Nom) (Vz): 16V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 17 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 12V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35

패키지: DO-204AH, DO-35, Axial

BZD27C62P-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 800MW SMF DO219

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 47V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

패키지: DO-219AB

BYG10DHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A SMA

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4µs
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AC, SMA

BY520-16E-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 500MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

EGL41A-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 50V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AB, MELF (Glass)

SE15FJHM3/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO219AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 900ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 10.5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-219AB

VS-15ETH06PBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2

VS-15ETL06-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 270ns
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2

MSS2P2-M3/89A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 2A MICROSMP

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 20V
• Capacitance @ Vr, F: 65pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: MicroSMP
• Supplier Device Package: MicroSMP
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: MicroSMP

MBR15H50CTHE3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-220AC

• Diode Configuration: -
• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io) (per Diode): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature - Junction: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

패키지: -

IRKC166/08

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 165A INT-A-PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 165A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20mA @ 800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3)
• Supplier Device Package: Module

패키지: INT-A-PAK (3)

VS-80CPH03-F3

Vishay Semiconductor Diodes Division

DIODE STANDARD 300V 20A TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

VS-40CPQ045-N3

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 45V TO247AC

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 590mV @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 4mA @ 45V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

패키지: TO-247-3

92MT140KB

Vishay Semiconductor Diodes Division

RECT BRIDGE 1400V 90A MTK

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 90A
• Voltage - Forward (Vf) (Max) @ If: -
• Current - Reverse Leakage @ Vr: -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: MTK
• Supplier Device Package: MTK

패키지: MTK

SMCJ60-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 60VWM 107VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 66.7V
• Voltage - Clamping (Max) @ Ipp: 107V
• Current - Peak Pulse (10/1000µs): 14A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

1N6375HE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 10VWM 14.1VC 1.5KE

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.7V
• Voltage - Clamping (Max) @ Ipp: 14.1V
• Current - Peak Pulse (10/1000µs): 90A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

패키지: DO-201AA, DO-27, Axial

BZW04-239B-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 239VWM 384VC DO204AL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 239V
• Voltage - Breakdown (Min): 266V
• Voltage - Clamping (Max) @ Ipp: 384V
• Current - Peak Pulse (10/1000µs): 1.1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

3KASMC18AHE3_B/H

Vishay Semiconductor Diodes Division

TVS DIODE 29.2VC 103A DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 18V
• Voltage - Breakdown (Min): 20V
• Voltage - Clamping (Max) @ Ipp: 29.2V
• Current - Peak Pulse (10/1000µs): 103A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

패키지: DO-214AB, SMC

SMCG15CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 15VWM 24.4VC SMC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 61.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

패키지: DO-215AB, SMC Gull Wing

SM15T150CA-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 128VWM 207VC DO-214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 128V
• Voltage - Breakdown (Min): 143V
• Voltage - Clamping (Max) @ Ipp: 207V
• Current - Peak Pulse (10/1000µs): 7.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

SMBJ70CAHE3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 70VWM 113VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 5.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB

SMCJ15A-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 15VWM 24.4VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15V
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 24.4V
• Current - Peak Pulse (10/1000µs): 61.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC