Vishay Semiconductor Diodes Division 제품

VS-VSKH41/16

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 45A ADD-A-PAK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 45A
• Current - On State (It (RMS)) (Max): 100A
• Voltage - Gate Trigger (Vgt) (Max): 2.5V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 850A, 890A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3 + 4)

패키지: ADD-A-PAK (3 + 4)

GDZ2V4B-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 2.4V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±4%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 120µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

BZX384B3V3-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.3V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±2%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 95 Ohms
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

MMBZ5255B-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 28V 225MW SOT23-3

• Voltage - Zener (Nom) (Vz): 28V
• Tolerance: ±5%
• Power - Max: 225mW
• Impedance (Max) (Zzt): 44 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

VS-20WT04FNTRL

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20A DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 20A
• Voltage - Forward (Vf) (Max) @ If: 540mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Capacitance @ Vr, F: 1900pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

SE70PBHM3/87A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2.9A TO277A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 2.9A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2.5µs
• Current - Reverse Leakage @ Vr: 20µA @ 100V
• Capacitance @ Vr, F: 76pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

SS10PH10HM3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 270pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-277, 3-PowerDFN

SB540-E3/51

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 5A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 480mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-201AD, Axial

VS-8EWH06FNTRHM3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-8EWH02FNTRR-M3

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A DPAK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 970mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 24ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

RGP10JE-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

VS-18TQ045SPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 18A D2PAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 18A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 18A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2.5mA @ 45V
• Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRKJ71/08A

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 80A ADD-A-PAK

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 80A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?

패키지: ADD-A-PAK (3)

IRKC56/12A

Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 60A ADD-A-PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 1200V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?

패키지: ADD-A-PAK (3)

VS-81CNQ035APBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 40A D61

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 40A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 40A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 35V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: D-61-8
• Supplier Device Package: D-61-8

패키지: D-61-8

SS8P2CLHM3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 4A TO277A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io) (per Diode): 4A
• Voltage - Forward (Vf) (Max) @ If: 540mV @ 4A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 300µA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

패키지: TO-277, 3-PowerDFN

VS-62CTQ030PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2.5mA @ 30V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

3N258-E4/72

Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 800V 2A KBPM

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -55°C ~ 165°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

GBL02-E3/45

Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 200V GBL

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBL
• Supplier Device Package: GBL

패키지: 4-SIP, GBL

B4M-E3/45

Vishay Semiconductor Diodes Division

DIODE BRIDGE 0.5A 400V 4DIP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 400V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1V @ 500mA
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.500", 12.70mm)
• Supplier Device Package: MBM

패키지: 4-DIP (0.500", 12.70mm)

P6KE170C-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 138VWM 244VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 138V
• Voltage - Breakdown (Min): 153V
• Voltage - Clamping (Max) @ Ipp: 244V
• Current - Peak Pulse (10/1000µs): 2.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

SMA5J11CHE3/61

Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 20.1VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 20.1V
• Current - Peak Pulse (10/1000µs): 24.9A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

P6KE170CAHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 145VWM 234VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 145V
• Voltage - Breakdown (Min): 162V
• Voltage - Clamping (Max) @ Ipp: 234V
• Current - Peak Pulse (10/1000µs): 2.6A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

P4KE440A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 376VWM 602VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 376V
• Voltage - Breakdown (Min): 418V
• Voltage - Clamping (Max) @ Ipp: 602V
• Current - Peak Pulse (10/1000µs): 660mA
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

SMA5J5.0A-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 5VWM 9.2VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5V
• Voltage - Breakdown (Min): 6.4V
• Voltage - Clamping (Max) @ Ipp: 9.2V
• Current - Peak Pulse (10/1000µs): 54.3A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

SMBJ150A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 150VWM 243VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 150V
• Voltage - Breakdown (Min): 167V
• Voltage - Clamping (Max) @ Ipp: 243V
• Current - Peak Pulse (10/1000µs): 2.5A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB

1.5SMC20CA-E3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 17.1VWM 27.7VC DO214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 17.1V
• Voltage - Breakdown (Min): 19V
• Voltage - Clamping (Max) @ Ipp: 27.7V
• Current - Peak Pulse (10/1000µs): 54.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

SM6T220A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 188VWM 328VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 188V
• Voltage - Breakdown (Min): 209V
• Voltage - Clamping (Max) @ Ipp: 328V
• Current - Peak Pulse (10/1000µs): 2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB