Vishay Semiconductor Diodes Division 제품

BZD27B120P-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 120V 0.8W DO-219AB

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: -
• Power - Max: 800mW
• Impedance (Max) (Zzt): 250 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 91V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: DO-219AB (SMF)

패키지: DO-219AB

BZX85B51-TR

Vishay Semiconductor Diodes Division

DIODE ZENER 51V 1.3W DO41

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±2%
• Power - Max: 1.3W
• Impedance (Max) (Zzt): 115 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 39V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

패키지: DO-204AL, DO-41, Axial

GDZ22B-G3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 22V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 22V
• Tolerance: ±4%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 17V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

MMBZ4699-G3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 12V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

BZX384C2V4-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 2.4V 200MW SOD323

• Voltage - Zener (Nom) (Vz): 2.4V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 100 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323

패키지: SC-76, SOD-323

MMBZ4689-E3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 5.1V 350MW SOT23-3

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±5%
• Power - Max: 350mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 10µA @ 3V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

패키지: TO-236-3, SC-59, SOT-23-3

SS3P5LHM3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 3A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150µA @ 50V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

GP10WHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.5KV 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1500V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 1500V
• Capacitance @ Vr, F: 5pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

VS-SD2000C10L

Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 2100A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io): 2100A
• Voltage - Forward (Vf) (Max) @ If: 1.55V @ 6000A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 60mA @ 1000V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

패키지: DO-200AB, B-PUK

VS-85HFLR10S02M

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 85A DO203AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.75V @ 267A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 120ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -40°C ~ 125°C

패키지: DO-203AB, DO-5, Stud

SS12P3L-M3/87A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 12A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 12A
• Voltage - Forward (Vf) (Max) @ If: 560mV @ 12A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Capacitance @ Vr, F: 930pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: TO-277, 3-PowerDFN

RS3D-M3/9AT

Vishay Semiconductor Diodes Division

DIODE SW 3A 200V 150NS DO-214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: 44pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AB, SMC

EGP20F-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 2A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Capacitance @ Vr, F: 45pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AC, DO-15, Axial

S2G-E3/1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1.5A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

1N4004GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 400V
• Capacitance @ Vr, F: 8pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

MMBD6050-E3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 70V 200MA SOT23

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 70V
• Current - Average Rectified (Io): 200mA
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: 150°C (Max)

패키지: TO-236-3, SC-59, SOT-23-3

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 40V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 125°C

패키지: DO-214AB, SMC

V30M120CHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 120V TO-220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 120V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 980mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 120V
• Operating Temperature - Junction: -40°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

1.5KE36C-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 29.1VWM 52VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 29.1V
• Voltage - Breakdown (Min): 32.4V
• Voltage - Clamping (Max) @ Ipp: 52V
• Current - Peak Pulse (10/1000µs): 28.8A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

패키지: DO-201AA, DO-27, Axial

P4KE27CHE3/73

Vishay Semiconductor Diodes Division

TVS DIODE 21.8VWM 39.1VC AXIAL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 21.8V
• Voltage - Breakdown (Min): 24.3V
• Voltage - Clamping (Max) @ Ipp: 39.1V
• Current - Peak Pulse (10/1000µs): 10.2A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

TPSMA10HE3/5AT

Vishay Semiconductor Diodes Division

TVS DIODE 8.1VWM 15VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.1V
• Voltage - Breakdown (Min): 9V
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 26.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

5KP130AHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 130VWM 209VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 130V
• Voltage - Breakdown (Min): 144V
• Voltage - Clamping (Max) @ Ipp: 209V
• Current - Peak Pulse (10/1000µs): 23.9A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

패키지: P600, Axial

5KP11AHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 18.2VC P600

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 275A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600

패키지: P600, Axial

SMCG78CA-M3/57T

Vishay Semiconductor Diodes Division

TVS DIODE 78VWM 126VC DO-215AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 78V
• Voltage - Breakdown (Min): 86.7V
• Voltage - Clamping (Max) @ Ipp: 126V
• Current - Peak Pulse (10/1000µs): 11.9A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: DO-215AB (SMCG)

패키지: DO-215AB, SMC Gull Wing

SMPC33A-M3/86A

Vishay Semiconductor Diodes Division

TVS DIODE 33VWM 53.3VC SMPC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 28.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)

패키지: TO-277, 3-PowerDFN

SMB10J33AHE3/5B

Vishay Semiconductor Diodes Division

TVS DIODE 33VWM 53.3VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 18.8A
• Power - Peak Pulse: 1000W (1kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: DO-214AA, SMB

SMBJ70CAHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 70VWM 113VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 70V
• Voltage - Breakdown (Min): 77.8V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 5.3A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB

P6SMB7.5CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 6.4VWM 11.3VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 6.4V
• Voltage - Breakdown (Min): 7.13V
• Voltage - Clamping (Max) @ Ipp: 11.3V
• Current - Peak Pulse (10/1000µs): 53.1A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: DO-214AA, SMB