Vishay Semiconductor Diodes Division 제품

SMBZ5942B-E3/5B

Vishay Semiconductor Diodes Division

DIODE ZENER 51V 3W DO214AA

• Voltage - Zener (Nom) (Vz): 51V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 38.8V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB

MMSZ5258C-HE3-18

Vishay Semiconductor Diodes Division

DIODE ZENER 36V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 36V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 27V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

BY134GP-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -

패키지: DO-204AC, DO-15, Axial

10ETF02FP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 10A TO220FP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 145ns
• Current - Reverse Leakage @ Vr: 100µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220AC Full Pack
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack

VS-41HFR160M

Vishay Semiconductor Diodes Division

DIODE 1600V 40ADO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 125A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-203AB (DO-5)
• Operating Temperature - Junction: -65°C ~ 160°C

패키지: DO-203AB, DO-5, Stud

VS-10ETF06FPPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 10A TO220FP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 200ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220AC Full Pack
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-220-2 Full Pack

GP02-20-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 250MA DO204

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 2000V
• Current - Average Rectified (Io): 250mA
• Voltage - Forward (Vf) (Max) @ If: 3V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 5µA @ 2000V
• Capacitance @ Vr, F: 3pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-204AL, DO-41, Axial

SSA33L-E3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30V 3A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

BYM07-150-E3/98

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 500MA DO213

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 150V
• Capacitance @ Vr, F: 7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA (GL34)
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: DO-213AA (Glass)

BAV102-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 250MA SOD80

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 250mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: SOD-80 MiniMELF
• Operating Temperature - Junction: 125°C (Max)

패키지: DO-213AC, MINI-MELF, SOD-80

VS-15ETX06FP-N3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220FP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 3.2V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 22ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220-2 Full Pack
• Operating Temperature - Junction: -65°C ~ 175°C

패키지: TO-220-2 Full Pack

VS-16CTQ100GSPBF

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 8A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 280µA @ 100V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-VSKJ56/14

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.4KV 30A ADDAPAK

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10mA @ 1400V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: ADD-A-PAK (3)
• Supplier Device Package: ADD-A-PAK?

패키지: ADD-A-PAK (3)

VS-60CTQ035-N3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 30A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 30A
• Voltage - Forward (Vf) (Max) @ If: 560mV @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 35V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

패키지: TO-220-3

VB40150C-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40A 150V TO-263AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.36V @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 150V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

V12W60C-M3/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 12A 60V DPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 6A
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 6A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3.5mA @ 60V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252, (D-Pak)

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

PB4010-E3/45

Vishay Semiconductor Diodes Division

RECT BRIDGE 40A 1000V ENHANCE PB

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, PB
• Supplier Device Package: isoCINK+? PB

패키지: 4-SIP, PB

BU2510-M3/45

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 25A 1000V BU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.05V @ 12.5A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, BU
• Supplier Device Package: isoCINK+? BU

패키지: 4-SIP, BU

P4KA16AHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 13.6VWM 22.5VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 13.6V
• Voltage - Breakdown (Min): 15.2V
• Voltage - Clamping (Max) @ Ipp: 22.5V
• Current - Peak Pulse (10/1000µs): 17.8A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

TPSMC9.1AHE3_A/H

Vishay Semiconductor Diodes Division

TVS DIODE 7.78VWM 13.4VC SMC

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 7.78V
• Voltage - Breakdown (Min): 8.65V
• Voltage - Clamping (Max) @ Ipp: 13.4V
• Current - Peak Pulse (10/1000µs): 112A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

TGL41-68-E3/97

Vishay Semiconductor Diodes Division

TVS DIODE 55.1VWM 98VC MELF

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 55.1V
• Voltage - Breakdown (Min): 61.2V
• Voltage - Clamping (Max) @ Ipp: 98V
• Current - Peak Pulse (10/1000µs): 4.1A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB

패키지: DO-213AB, MELF

SA7.5CAHE3/54

Vishay Semiconductor Diodes Division

TVS DIODE 7.5VWM 12.9VC DO204AC

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 38.8A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

패키지: DO-204AC, DO-15, Axial

P4KE82A-E3/54

Vishay Semiconductor Diodes Division

TVS DIODE 70.1VWM 113VC AXIAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 70.1V
• Voltage - Breakdown (Min): 77.9V
• Voltage - Clamping (Max) @ Ipp: 113V
• Current - Peak Pulse (10/1000µs): 3.5A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

SMCJ30CA-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 30VWM 48.4VC DO-214AB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 30V
• Voltage - Breakdown (Min): 33.3V
• Voltage - Clamping (Max) @ Ipp: 48.4V
• Current - Peak Pulse (10/1000µs): 31A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

패키지: DO-214AB, SMC

1.5SMC150CA-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 128VWM 207VC SMCJ

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 128V
• Voltage - Breakdown (Min): 143V
• Voltage - Clamping (Max) @ Ipp: 207V
• Current - Peak Pulse (10/1000µs): 7.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

패키지: DO-214AB, SMC

SMCJ33A-M3/9AT

Vishay Semiconductor Diodes Division

TVS DIODE 33VWM 53.3VC DO-214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 28.1A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

패키지: DO-214AB, SMC

GL15T-HE3-08

Vishay Semiconductor Diodes Division

TVS DIODE 15VWM 33VC SOT23

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15V (Max)
• Voltage - Breakdown (Min): 16.7V
• Voltage - Clamping (Max) @ Ipp: 33V
• Current - Peak Pulse (10/1000µs): 5A (8/20µs)
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: 2.5pF @ 1MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

패키지: TO-236-3, SC-59, SOT-23-3

SMBJ11CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 11VWM 18.2VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 11V
• Voltage - Breakdown (Min): 12.2V
• Voltage - Clamping (Max) @ Ipp: 18.2V
• Current - Peak Pulse (10/1000µs): 33A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB