Vishay Semiconductor Diodes Division 제품

VS-ST330S16M1

Vishay Semiconductor Diodes Division

SCR 1600V 520A TO-118

• Voltage - Off State: 1600V
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 200mA
• Voltage - On State (Vtm) (Max): 1.52V
• Current - On State (It (AV)) (Max): 330A
• Current - On State (It (RMS)) (Max): 520A
• Current - Hold (Ih) (Max): 600mA
• Current - Off State (Max): 50mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 7570A, 7920A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: TO-209AE, TO-118-4, Stud
• Supplier Device Package: TO-209AE (TO-118)

패키지: TO-209AE, TO-118-4, Stud

ZMM5244B-13

Vishay Semiconductor Diodes Division

DIODE ZENER SOD80 MINIMELF

• Voltage - Zener (Nom) (Vz): 14V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 10V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

패키지: DO-213AC, MINI-MELF, SOD-80

GLL4736-E3/96

Vishay Semiconductor Diodes Division

DIODE ZENER 6.8V 1W MELF DO213AB

• Voltage - Zener (Nom) (Vz): 6.8V
• Tolerance: ±10%
• Power - Max: 1W
• Impedance (Max) (Zzt): 3.5 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: MELF DO-213AB

패키지: DO-213AB, MELF

MMSZ4686-E3-08

Vishay Semiconductor Diodes Division

DIODE ZENER 3.9V 500MW SOD123

• Voltage - Zener (Nom) (Vz): 3.9V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 5µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123

패키지: SOD-123

EGP10FHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 1A DO204AL

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 300V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-204AL, DO-41, Axial

VS-150UR80DL

Vishay Semiconductor Diodes Division

DIODE GP 800V 150A DO-8

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.47V @ 600A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -40°C ~ 180°C

패키지: DO-205AA, DO-8, Stud

MBRB1045HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 10A TO263AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 20A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BYW172G-TAP

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 3A SOD64

• Diode Type: Avalanche
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 100ns
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: SOD-64, Axial
• Supplier Device Package: SOD-64
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: SOD-64, Axial

V10P45S-M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 4.4A TO277A

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 45V
• Current - Average Rectified (Io): 4.4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 800µA @ 45V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-277, 3-PowerDFN

VS-MBRD340TR-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 3A 40V DPAK

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Capacitance @ Vr, F: 189pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-PAK (TO-252AA)
• Operating Temperature - Junction: -40°C ~ 150°C

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

VS-MBRS1100-M3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1A SMB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 100V
• Capacitance @ Vr, F: 42pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB (DO-214AA)
• Operating Temperature - Junction: -55°C ~ 175°C

패키지: DO-214AA, SMB

SB2G-M3/5BT

Vishay Semiconductor Diodes Division

DIODE RECT 2A 400V DO-214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Current - Reverse Leakage @ Vr: 1µA @ 400V
• Capacitance @ Vr, F: 16pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -55°C ~ 150°C

패키지: DO-214AA, SMB

B120-M3/5AT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 20V 1A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 520mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -65°C ~ 150°C

패키지: DO-214AC, SMA

6CWQ03FNTRL

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 30V DPAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 30V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

VSKD270-08

Vishay Semiconductor Diodes Division

DIODE MODULE 800V 270A MAGNAPAK

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io) (per Diode): 270A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50mA @ 800V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: 3-MAGN-A-PAK?
• Supplier Device Package: MAGN-A-PAK?

패키지: 3-MAGN-A-PAK?

MBRB30H100CT-E3/45

Vishay Semiconductor Diodes Division

DIODE ARRAY SCHOTTKY 100V TO263

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 15A
• Voltage - Forward (Vf) (Max) @ If: 820mV @ 15A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB

패키지: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

VS-MURB1020CT-1PBF

Vishay Semiconductor Diodes Division

DIODE ARRAY GP 200V 5A TO262

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 5A
• Voltage - Forward (Vf) (Max) @ If: 990mV @ 5A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Operating Temperature - Junction: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

패키지: TO-262-3 Long Leads, I2Pak, TO-262AA

GBPC3506W-E4/51

Vishay Semiconductor Diodes Division

RECTIFIER BRIDGE 35A 600V GBPCW

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 35A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, GBPC-W
• Supplier Device Package: GBPC-W

패키지: 4-Square, GBPC-W

3N257-E4/51

Vishay Semiconductor Diodes Division

DIODE BRIDGE 2A 600V 4SIP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Operating Temperature: -55°C ~ 165°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, KBPM
• Supplier Device Package: KBPM

패키지: 4-SIP, KBPM

1.5KE27C-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 21.8VWM 39.1VC 1.5KE

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 21.8V
• Voltage - Breakdown (Min): 24.3V
• Voltage - Clamping (Max) @ Ipp: 39.1V
• Current - Peak Pulse (10/1000µs): 38.4A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: 1.5KE

패키지: DO-201AA, DO-27, Axial

TPSMA16HE3_A/I

Vishay Semiconductor Diodes Division

TVS DIODE 12.9VWM 23.5VC SMA

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12.9V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 23.5V
• Current - Peak Pulse (10/1000µs): 17A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

TMPG06-12AHE3_A/C

Vishay Semiconductor Diodes Division

TVS DIODE 16.7VC 24A MPG06

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 10.2V
• Voltage - Breakdown (Min): 11.4V
• Voltage - Clamping (Max) @ Ipp: 16.7V
• Current - Peak Pulse (10/1000µs): 24A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Supplier Device Package: MPG06

패키지: MPG06, Axial

BZW04-23B-E3/73

Vishay Semiconductor Diodes Division

TVS DIODE 23.1VWM 37.5VC DO204AL

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 23.1V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 10.7A
• Power - Peak Pulse: 400W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

패키지: DO-204AL, DO-41, Axial

3KASMC33AHE3_B/H

Vishay Semiconductor Diodes Division

TVS DIODE 53.3VC 56.3A DO214AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 33V
• Voltage - Breakdown (Min): 36.7V
• Voltage - Clamping (Max) @ Ipp: 53.3V
• Current - Peak Pulse (10/1000µs): 56.3A
• Power - Peak Pulse: 3000W (3kW)
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 185°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)

패키지: DO-214AB, SMC

SM6T200CAHE3/52

Vishay Semiconductor Diodes Division

TVS DIODE 171VWM 274VC SMB

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 171V
• Voltage - Breakdown (Min): 190V
• Voltage - Clamping (Max) @ Ipp: 274V
• Current - Peak Pulse (10/1000µs): 2.2A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMBJ)

패키지: DO-214AA, SMB

SMA5J13CA-E3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 13VWM 21.5VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 13V
• Voltage - Breakdown (Min): 14.4V
• Voltage - Clamping (Max) @ Ipp: 21.5V
• Current - Peak Pulse (10/1000µs): 23.3A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

SMAJ120CAHE3/5A

Vishay Semiconductor Diodes Division

TVS DIODE 120VWM 193VC SMA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 120V
• Voltage - Breakdown (Min): 133V
• Voltage - Clamping (Max) @ Ipp: 193V
• Current - Peak Pulse (10/1000µs): 1.6A
• Power - Peak Pulse: 300W
• Power Line Protection: No
• Applications: Automotive
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

패키지: DO-214AC, SMA

P6SMB18A-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 15.3VWM 25.2VC SMB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 15.3V
• Voltage - Breakdown (Min): 17.1V
• Voltage - Clamping (Max) @ Ipp: 25.2V
• Current - Peak Pulse (10/1000µs): 23.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)

패키지: DO-214AA, SMB