페이지 11 - Vishay Siliconix 제품 - 트랜지스터 - FET, MOSFET - 어레이

부품 번호	제조업체	설명	패키지	재고	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SIB900EDK-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.5A SC-75-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	패키지: PowerPAK? SC-75-6L Dual	재고144,000	Logic Level Gate	20V	1.5A	225 mOhm @ 1.6A, 4.5V	1V @ 250µA	1.7nC @ 4.5V	-	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Dual	PowerPAK? SC-75-6L Dual
SIB912DK-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 1.5A SC-75-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.5A Rds On (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-75-6L Dual Supplier Device Package: PowerPAK? SC-75-6L Dual	패키지: PowerPAK? SC-75-6L Dual	재고7,440	Logic Level Gate	20V	1.5A	216 mOhm @ 1.8A, 4.5V	1V @ 250µA	3nC @ 8V	95pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-75-6L Dual	PowerPAK? SC-75-6L Dual
SI7994DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 60A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 60A Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V Power - Max: 46W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고7,712	Standard	30V	60A	5.6 mOhm @ 20A, 10V	3V @ 250µA	80nC @ 10V	3500pF @ 15V	46W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SQJQ900E-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V PWRPAK8X8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V Power - Max: 135W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 8 x 8 Dual Supplier Device Package: PowerPAK? 8 x 8 Dual	패키지: PowerPAK? 8 x 8 Dual	재고4,144	Standard	40V	100A (Tc)	3.9 mOhm @ 20A, 10V	2.5V @ 250µA	120nC @ 10V	5900pF @ 20V	135W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? 8 x 8 Dual	PowerPAK? 8 x 8 Dual
SI6913DQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 4.9A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 400µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 830mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고15,780	Logic Level Gate	12V	4.9A	21 mOhm @ 5.8A, 4.5V	900mV @ 400µA	28nC @ 4.5V	-	830mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4943BDY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 6.3A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고397,068	Logic Level Gate	20V	6.3A	19 mOhm @ 8.4A, 10V	3V @ 250µA	25nC @ 5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ960EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 60V 8A FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고2,576	Logic Level Gate	60V	8A	36 mOhm @ 5.3A, 10V	2.5V @ 250µA	20nC @ 10V	735pF @ 25V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SIZ920DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 40A PWRPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 39W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerPair? Supplier Device Package: 6-PowerPair?	패키지: 6-PowerPair?	재고110,244	Standard	30V	40A	7.1 mOhm @ 18.9A, 10V	2.5V @ 250µA	35nC @ 10V	1260pF @ 15V	39W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	6-PowerPair?	6-PowerPair?
SIZ914DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A PWRPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 40A Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V Power - Max: 22.7W, 100W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-PowerPair?	패키지: 8-WDFN Exposed Pad	재고5,888	Logic Level Gate	30V	16A, 40A	6.4 mOhm @ 19A, 10V	2.4V @ 250µA	26nC @ 10V	1208pF @ 15V	22.7W, 100W	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-PowerPair?
SQ4917EY-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2P-CH 60V 8SO FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V Power - Max: 5W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,272	Standard	60V	8A (Tc)	48 mOhm @ 4.3A, 10V	2.5V @ 250µA	65nC @ 10V	1910pF @ 30V	5W (Tc)	-55°C ~ 175°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ963EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2P-CH 60V SO8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V Power - Max: 27W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고7,520	Standard	60V	8A (Tc)	85 mOhm @ 3.5A, 10V	2.5V @ 250µA	40nC @ 10V	1140pF @ 30V	27W (Tc)	-55°C ~ 175°C (TA)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI7214DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 4.6A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.6A Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고628,236	Logic Level Gate	30V	4.6A	40 mOhm @ 6.4A, 10V	3V @ 250µA	6.5nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI7913DN-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 5A 1212-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5A Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고49,020	Logic Level Gate	20V	5A	37 mOhm @ 7.4A, 4.5V	1V @ 250µA	24nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SI7980DP-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 8A PPAK SO-8 FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V Power - Max: 19.8W, 21.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고4,976	Standard	20V	8A	22 mOhm @ 5A, 10V	2.5V @ 250µA	27nC @ 10V	1010pF @ 10V	19.8W, 21.9W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SQ4961EY-T1_GE3	Vishay Siliconix	MOSFET DUAL P-CHAN 60V SO8 FET Type: 2 P-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V Power - Max: 3.3W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,840	Standard	60V	4.4A (Tc)	85 mOhm @ 3.5A, 10V	2.5V @ 250µA	40nC @ 10V	1140pF @ 25V	3.3W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIZ902DT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 16A POWERPAIR FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Power - Max: 29W, 66W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PowerPair?	패키지: 8-PowerWDFN	재고137,400	Logic Level Gate	30V	16A	12 mOhm @ 13.8A, 10V	2.2V @ 250µA	21nC @ 10V	790pF @ 15V	29W, 66W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PowerPair?
SQJ500AEP-T1_GE3	Vishay Siliconix	MOSFET N/P CHAN 40V SO8L DUAL FET Type: N and P-Channel FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고3,552	-	40V	30A (Tc)	27 mOhm @ 6A, 10V	2.3V @ 250µA	38.1nC @ 10V	1850pF @ 20V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SI4948BEY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 60V 2.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고61,188	Logic Level Gate	60V	2.4A	120 mOhm @ 3.1A, 10V	3V @ 250µA	22nC @ 10V	-	1.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI9926CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 20V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,409,876	Logic Level Gate	20V	8A	18 mOhm @ 8.3A, 4.5V	1.5V @ 250µA	33nC @ 10V	1200pF @ 10V	3.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI5902BDC-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 4A 1206-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V Power - Max: 3.12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고29,172	Logic Level Gate	30V	4A (Tc)	65 mOhm @ 3.1A, 10V	3V @ 250µA	7nC @ 10V	220pF @ 15V	3.12W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	1206-8 ChipFET?
SI4948BEY-T1-E3	Vishay Siliconix	MOSFET 2P-CH 60V 2.4A 8-SOIC FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.4W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고157,068	Logic Level Gate	60V	2.4A	120 mOhm @ 3.1A, 10V	3V @ 250µA	22nC @ 10V	-	1.4W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SI4830CDY-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V Power - Max: 2.9W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,400	Logic Level Gate	30V	8A	20 mOhm @ 8A, 10V	3V @ 1mA	25nC @ 10V	950pF @ 15V	2.9W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SQJ940EP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 15A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 896pF @ 20V Power - Max: 48W, 43W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	패키지: PowerPAK? SO-8 Dual	재고6,624	Logic Level Gate	40V	15A (Ta), 18A (Tc)	16 mOhm @ 15A, 10V	2.5V @ 250µA	20nC @ 20V	896pF @ 20V	48W, 43W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
SI7224DN-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 6A PPAK 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V Power - Max: 17.8W, 23W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	패키지: PowerPAK? 1212-8 Dual	재고250,212	Logic Level Gate	30V	6A	35 mOhm @ 6.5A, 10V	2.2V @ 250µA	14.5nC @ 10V	570pF @ 15V	17.8W, 23W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
SQJ974EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 100V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 25.5 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고7,776	Standard	100V	30A (Tc)	25.5 mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1050pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SQJ912AEP-T1_GE3	Vishay Siliconix	MOSFET 2N-CH 40V 30A PPAK SO-8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고4,704	Standard	40V	30A	9.3 mOhm @ 9.7A, 10V	2.5V @ 250µA	38nC @ 10V	1835pF @ 20V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SQJ990EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 100V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric	패키지: PowerPAK? SO-8 Dual	재고7,200	Standard	100V	34A (Tc)	40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V, 15nC @ 10V	1390pF @ 25V, 650pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual Asymmetric
SQJB60EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 60V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V Power - Max: 48W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고3,536	Standard	60V	30A (Tc)	12 mOhm @ 10A, 10V	2.5V @ 250µA	30nC @ 10V	1600pF @ 25V	48W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SQJ980AEP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 75V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V Power - Max: 34W (Tc) Operating Temperature: -55°C ~ 175°C (TA) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고4,848	Standard	75V	17A (Tc)	50 mOhm @ 3.8A, 10V	2.5V @ 250µA	21nC @ 10V	790pF @ 35V	34W (Tc)	-55°C ~ 175°C (TA)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual
SQJB40EP-T1_GE3	Vishay Siliconix	MOSFET ARRAY 2N-CH 40V SO8 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V Power - Max: 34W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SO-8 Dual Supplier Device Package: PowerPAK? SO-8 Dual	패키지: PowerPAK? SO-8 Dual	재고7,056	Standard	40V	30A (Tc)	8 mOhm @ 8A, 10V	2.5V @ 250µA	35nC @ 10V	1900pF @ 25V	34W	-55°C ~ 175°C (TJ)	Surface Mount	PowerPAK? SO-8 Dual	PowerPAK? SO-8 Dual

SIB900EDK-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-75-6L Dual
Supplier Device Package: PowerPAK? SC-75-6L Dual

패키지: PowerPAK? SC-75-6L Dual

재고144,000

Logic Level Gate

20V

1.5A

225 mOhm @ 1.6A, 4.5V

1V @ 250µA

1.7nC @ 4.5V

-

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Dual

SIB912DK-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Rds On (Max) @ Id, Vgs: 216 mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 95pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-75-6L Dual
Supplier Device Package: PowerPAK? SC-75-6L Dual

패키지: PowerPAK? SC-75-6L Dual

재고7,440

Logic Level Gate

20V

1.5A

216 mOhm @ 1.8A, 4.5V

1V @ 250µA

3nC @ 8V

95pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-75-6L Dual

SI7994DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 60A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 60A
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 15V
Power - Max: 46W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고7,712

Standard

30V

60A

5.6 mOhm @ 20A, 10V

3V @ 250µA

80nC @ 10V

3500pF @ 15V

46W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SQJQ900E-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V PWRPAK8X8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 20V
Power - Max: 135W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 8 x 8 Dual
Supplier Device Package: PowerPAK? 8 x 8 Dual

패키지: PowerPAK? 8 x 8 Dual

재고4,144

Standard

40V

100A (Tc)

3.9 mOhm @ 20A, 10V

2.5V @ 250µA

120nC @ 10V

5900pF @ 20V

135W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? 8 x 8 Dual

SI6913DQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 4.9A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 830mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고15,780

Logic Level Gate

12V

4.9A

21 mOhm @ 5.8A, 4.5V

900mV @ 400µA

28nC @ 4.5V

-

830mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4943BDY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 6.3A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19 mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고397,068

Logic Level Gate

20V

6.3A

19 mOhm @ 8.4A, 10V

3V @ 250µA

25nC @ 5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ960EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 60V 8A

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 735pF @ 25V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고2,576

Logic Level Gate

60V

8A

36 mOhm @ 5.3A, 10V

2.5V @ 250µA

20nC @ 10V

735pF @ 25V

34W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SIZ920DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 40A PWRPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 7.1 mOhm @ 18.9A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Power - Max: 39W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair?
Supplier Device Package: 6-PowerPair?

패키지: 6-PowerPair?

재고110,244

Standard

30V

40A

7.1 mOhm @ 18.9A, 10V

2.5V @ 250µA

35nC @ 10V

1260pF @ 15V

39W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

6-PowerPair?

SIZ914DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A PWRPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 40A
Rds On (Max) @ Id, Vgs: 6.4 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1208pF @ 15V
Power - Max: 22.7W, 100W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-PowerPair?

패키지: 8-WDFN Exposed Pad

재고5,888

Logic Level Gate

30V

16A, 40A

6.4 mOhm @ 19A, 10V

2.4V @ 250µA

26nC @ 10V

1208pF @ 15V

22.7W, 100W

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-PowerPair?

SQ4917EY-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2P-CH 60V 8SO

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Power - Max: 5W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,272

Standard

60V

8A (Tc)

48 mOhm @ 4.3A, 10V

2.5V @ 250µA

65nC @ 10V

1910pF @ 30V

5W (Tc)

-55°C ~ 175°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ963EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2P-CH 60V SO8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 30V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고7,520

Standard

60V

8A (Tc)

85 mOhm @ 3.5A, 10V

2.5V @ 250µA

40nC @ 10V

1140pF @ 30V

27W (Tc)

-55°C ~ 175°C (TA)

Surface Mount

PowerPAK? SO-8 Dual

SI7214DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4.6A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고628,236

Logic Level Gate

30V

4.6A

40 mOhm @ 6.4A, 10V

3V @ 250µA

6.5nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI7913DN-T1-E3

Vishay Siliconix

MOSFET 2P-CH 20V 5A 1212-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5A
Rds On (Max) @ Id, Vgs: 37 mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고49,020

Logic Level Gate

20V

5A

37 mOhm @ 7.4A, 4.5V

1V @ 250µA

24nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SI7980DP-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 8A PPAK SO-8

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 10V
Power - Max: 19.8W, 21.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고4,976

Standard

20V

8A

22 mOhm @ 5A, 10V

2.5V @ 250µA

27nC @ 10V

1010pF @ 10V

19.8W, 21.9W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SQ4961EY-T1_GE3

Vishay Siliconix

MOSFET DUAL P-CHAN 60V SO8

FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1140pF @ 25V
Power - Max: 3.3W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,840

Standard

60V

4.4A (Tc)

85 mOhm @ 3.5A, 10V

2.5V @ 250µA

40nC @ 10V

1140pF @ 25V

3.3W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIZ902DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 16A POWERPAIR

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 12 mOhm @ 13.8A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Power - Max: 29W, 66W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PowerPair?

패키지: 8-PowerWDFN

재고137,400

Logic Level Gate

30V

16A

12 mOhm @ 13.8A, 10V

2.2V @ 250µA

21nC @ 10V

790pF @ 15V

29W, 66W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PowerPair?

SQJ500AEP-T1_GE3

Vishay Siliconix

MOSFET N/P CHAN 40V SO8L DUAL

FET Type: N and P-Channel
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 27 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 20V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고3,552

-

40V

30A (Tc)

27 mOhm @ 6A, 10V

2.3V @ 250µA

38.1nC @ 10V

1850pF @ 20V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SI4948BEY-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고61,188

Logic Level Gate

60V

2.4A

120 mOhm @ 3.1A, 10V

3V @ 250µA

22nC @ 10V

-

1.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI9926CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 18 mOhm @ 8.3A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,409,876

Logic Level Gate

20V

8A

18 mOhm @ 8.3A, 4.5V

1.5V @ 250µA

33nC @ 10V

1200pF @ 10V

3.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI5902BDC-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4A 1206-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
Power - Max: 3.12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고29,172

Logic Level Gate

30V

4A (Tc)

65 mOhm @ 3.1A, 10V

3V @ 250µA

7nC @ 10V

220pF @ 15V

3.12W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

1206-8 ChipFET?

SI4948BEY-T1-E3

Vishay Siliconix

MOSFET 2P-CH 60V 2.4A 8-SOIC

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.4W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고157,068

Logic Level Gate

60V

2.4A

120 mOhm @ 3.1A, 10V

3V @ 250µA

22nC @ 10V

-

1.4W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SI4830CDY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V
Power - Max: 2.9W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,400

Logic Level Gate

30V

8A

20 mOhm @ 8A, 10V

3V @ 1mA

25nC @ 10V

950pF @ 15V

2.9W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SQJ940EP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 15A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 896pF @ 20V
Power - Max: 48W, 43W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

패키지: PowerPAK? SO-8 Dual

재고6,624

Logic Level Gate

40V

15A (Ta), 18A (Tc)

16 mOhm @ 15A, 10V

2.5V @ 250µA

20nC @ 20V

896pF @ 20V

48W, 43W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

SI7224DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 6A PPAK 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 35 mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 15V
Power - Max: 17.8W, 23W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

패키지: PowerPAK? 1212-8 Dual

재고250,212

Logic Level Gate

30V

6A

35 mOhm @ 6.5A, 10V

2.2V @ 250µA

14.5nC @ 10V

570pF @ 15V

17.8W, 23W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

SQJ974EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 100V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 25.5 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고7,776

Standard

100V

30A (Tc)

25.5 mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1050pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SQJ912AEP-T1_GE3

Vishay Siliconix

MOSFET 2N-CH 40V 30A PPAK SO-8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1835pF @ 20V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고4,704

Standard

40V

30A

9.3 mOhm @ 9.7A, 10V

2.5V @ 250µA

38nC @ 10V

1835pF @ 20V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SQJ990EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 100V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V, 650pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual Asymmetric

패키지: PowerPAK? SO-8 Dual

재고7,200

Standard

100V

34A (Tc)

40 mOhm @ 6A, 10V, 19 mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V, 15nC @ 10V

1390pF @ 25V, 650pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

PowerPAK? SO-8 Dual Asymmetric

SQJB60EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 60V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Power - Max: 48W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고3,536

Standard

60V

30A (Tc)

12 mOhm @ 10A, 10V

2.5V @ 250µA

30nC @ 10V

1600pF @ 25V

48W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual

SQJ980AEP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 75V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 35V
Power - Max: 34W (Tc)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고4,848

Standard

75V

17A (Tc)

50 mOhm @ 3.8A, 10V

2.5V @ 250µA

21nC @ 10V

790pF @ 35V

34W (Tc)

-55°C ~ 175°C (TA)

Surface Mount

PowerPAK? SO-8 Dual

SQJB40EP-T1_GE3

Vishay Siliconix

MOSFET ARRAY 2N-CH 40V SO8

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
Power - Max: 34W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SO-8 Dual
Supplier Device Package: PowerPAK? SO-8 Dual

패키지: PowerPAK? SO-8 Dual

재고7,056

Standard

40V

30A (Tc)

8 mOhm @ 8A, 10V

2.5V @ 250µA

35nC @ 10V

1900pF @ 25V

34W

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? SO-8 Dual