페이지 25 - Vishay Siliconix 제품

부품 번호	제조업체	설명	패키지	재고
SI5479DU-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V 16A CHIPFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc) Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? ChipFet Single Package / Case: PowerPAK? ChipFET? Single	패키지: PowerPAK? ChipFET? Single	재고3,760
SI4324DY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 36A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고450,192
IRFR9214TRL	Vishay Siliconix	MOSFET P-CH 250V 2.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,272
IRFR420TRL	Vishay Siliconix	MOSFET N-CH 500V 2.4A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고36,000
IRFR9214	Vishay Siliconix	MOSFET P-CH 250V 2.7A DPAK FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 50W (Tc) Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고4,800
SI7390DP-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 9A PPAK SO-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SO-8 Package / Case: PowerPAK? SO-8	패키지: PowerPAK? SO-8	재고53,988
SIA415DJ-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 12A SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? SC-70-6 Single Package / Case: PowerPAK? SC-70-6	패키지: PowerPAK? SC-70-6	재고66,660
IRFI9620GPBF	Vishay Siliconix	MOSFET P-CH 200V 3A TO220FP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	패키지: TO-220-3 Full Pack, Isolated Tab	재고27,960
IRFR220TRLPBF	Vishay Siliconix	MOSFET N-CH 200V 4.8A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고180,000
IRFU024PBF	Vishay Siliconix	MOSFET N-CH 60V 14A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고31,242
IRFU110PBF	Vishay Siliconix	MOSFET N-CH 100V 4.3A I-PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251AA Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	패키지: TO-251-3 Short Leads, IPak, TO-251AA	재고19,200
SI5915BDC-T1-E3	Vishay Siliconix	MOSFET 2P-CH 8V 4A 1206-8 FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 4A Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V Power - Max: 3.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 1206-8 ChipFET?	패키지: 8-SMD, Flat Lead	재고60,720
SIP21108DR-T1-E3	Vishay Siliconix	IC REG LIN POS ADJ 150MA SC70-5 Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 1.2V Voltage - Output (Max): 5.78V Voltage Dropout (Max): 0.22V @ 150mA Current - Output: 150mA Current - Quiescent (Iq): - Current - Supply (Max): 85µA PSRR: 72dB ~ 38dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SC-70-5	패키지: 5-TSSOP, SC-70-5, SOT-353	재고7,440
SI9112DY-T1-E3	Vishay Siliconix	IC REG CTRLR MULT TOP 14SOIC Output Type: Transistor Driver Function: Step-Up/Step-Down Output Configuration: Positive Topology: Cuk, Flyback, Forward Converter, Push-Pull Number of Outputs: 1 Output Phases: 1 Voltage - Supply (Vcc/Vdd): 9 V ~ 13.5 V Frequency - Switching: 40kHz ~ 1MHz Duty Cycle (Max): - Synchronous Rectifier: No Clock Sync: No Serial Interfaces: - Control Features: Enable, Reset Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고9,456
SIP32459DB-T2-GE1	Vishay Siliconix	IC SW W/CTRL SLEW RATE WCSP6 Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.5 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Rds On (Typ): 20 mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Fault Protection: - Operating Temperature: -40°C ~ 125°C (TJ) Package / Case: 6-UFBGA, CSPBGA Supplier Device Package: 6-WLCSP (1.46x0.96)	패키지: 6-UFBGA, CSPBGA	재고24,918
SIP32419DN-T1-GE4	Vishay Siliconix	LOAD SWITCH 3A 28V 10DFN Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 6 V ~ 28 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Rds On (Typ): 56 mOhm Input Type: Non-Inverting Features: Power Good, Slew Rate Controlled, Status Flag Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 10-VFDFN Exposed Pad Supplier Device Package: 10-DFN (3x3)	패키지: 10-VFDFN Exposed Pad	재고102,180
SIC620CD-T1-GE3	Vishay Siliconix	IC CTLR STAGE 60A PPAK MLP55-31L Output Configuration: Half Bridge Applications: Synchronous Buck Converters Interface: PWM Load Type: Inductive Technology: Power MOSFET Rds On (Typ): - Current - Output / Channel: 60A Current - Peak Output: - Voltage - Supply: 4.5 V ~ 5.5 V Voltage - Load: 4.5 V ~ 18 V Operating Temperature: -40°C ~ 150°C (TJ) Features: Bootstrap Circuit, Diode Emulation, Status Flag Fault Protection: Over Temperature, Shoot-Through, UVLO Mounting Type: Surface Mount Package / Case: PowerPAK? MLP55-31L Supplier Device Package: PowerPAK? MLP55-31L	패키지: PowerPAK? MLP55-31L	재고17,316
SJM187BXC	Vishay Siliconix	IC ANALOG SWITCH Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,792
DG308BAK/883	Vishay Siliconix	IC SWITCH QUAD SPST 16DIP Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 85 Ohm Channel-to-Channel Matching (ΔRon): 1.7 Ohm Voltage - Supply, Single (V+): 4 V ~ 44 V Voltage - Supply, Dual (V±): ±4 V ~ 22 V Switch Time (Ton, Toff) (Max): 200ns, 150ns -3db Bandwidth: - Charge Injection: 1pC Channel Capacitance (CS(off), CD(off)): 5pF, 5pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -95dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-CDIP (0.300", 7.62mm) Supplier Device Package: 16-CERDIP	패키지: 16-CDIP (0.300", 7.62mm)	재고3,376
DG221BDY	Vishay Siliconix	IC SWITCH QUAD SPST/CMOS 16SOIC Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 90 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 550ns, 340ns -3db Bandwidth: - Charge Injection: 20pC Channel Capacitance (CS(off), CD(off)): 8pF, 9pF Current - Leakage (IS(off)) (Max): 5nA Crosstalk: -90dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고7,808
DG612EEN-T1-GE4	Vishay Siliconix	IC AMP/VIDEO/MUX LP 16QFN Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 115 Ohm Channel-to-Channel Matching (ΔRon): 600 mOhm Voltage - Supply, Single (V+): 3 V ~ 12 V Voltage - Supply, Dual (V±): ±3 V ~ 5 V Switch Time (Ton, Toff) (Max): 50ns, 35ns -3db Bandwidth: 1GHz Charge Injection: 1.4pC Channel Capacitance (CS(off), CD(off)): 3pF, 3pF Current - Leakage (IS(off)) (Max): 100pA Crosstalk: -74dB @ 10MHz Operating Temperature: -40°C ~ 125°C (TA) Package / Case: 16-UFQFN Supplier Device Package: 16-miniQFN (1.8x2.6)	패키지: 16-UFQFN	재고23,994
SQJ479EP-T1_BE3	Vishay Siliconix	P-CHANNEL 80-V (D-S) 175C MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 68W (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	패키지: -	재고24,423
SI6423ADQ-T1-GE3	Vishay Siliconix	MOSFET PCH 20V 10.3/12.5A 8TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	패키지: -	재고18,000
SI1965DH-T1-BE3	Vishay Siliconix	MOSFET 2P-CH 12V 1.3A SC70-6 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V Power - Max: 740mW (Ta), 1.25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6	패키지: -	Request a Quote
IRFR014TRPBF-BE3	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252AA Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	패키지: -	재고324
SQ2319ES-T1-GE3	Vishay Siliconix	MOSFET P-CH 40V 4.6A TO-236 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: -	Request a Quote
SQ2318BES-T1_GE3	Vishay Siliconix	MOSFET N-CH 40V 8A SOT23-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 (TO-236) Package / Case: TO-236-3, SC-59, SOT-23-3	패키지: -	재고30
SIZ342ADT-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 15.7A 8PWR33 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V Power - Max: 3.7W (Ta), 16.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-Power33 (3x3)	패키지: -	재고36,255

SI5479DU-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 16A CHIPFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 6V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 17.8W (Tc)
Rds On (Max) @ Id, Vgs: 21 mOhm @ 6.9A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? ChipFet Single
Package / Case: PowerPAK? ChipFET? Single

패키지: PowerPAK? ChipFET? Single

재고3,760

SI4324DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 36A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고450,192

IRFR9214TRL

Vishay Siliconix

MOSFET P-CH 250V 2.7A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,272

IRFR420TRL

Vishay Siliconix

MOSFET N-CH 500V 2.4A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고36,000

IRFR9214

Vishay Siliconix

MOSFET P-CH 250V 2.7A DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고4,800

SI7390DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 9A PPAK SO-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SO-8
Package / Case: PowerPAK? SO-8

패키지: PowerPAK? SO-8

재고53,988

SIA415DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 12A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 35 mOhm @ 5.6A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-70-6 Single
Package / Case: PowerPAK? SC-70-6

패키지: PowerPAK? SC-70-6

재고66,660

IRFI9620GPBF

Vishay Siliconix

MOSFET P-CH 200V 3A TO220FP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab

패키지: TO-220-3 Full Pack, Isolated Tab

재고27,960

IRFR220TRLPBF

Vishay Siliconix

MOSFET N-CH 200V 4.8A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고180,000

IRFU024PBF

Vishay Siliconix

MOSFET N-CH 60V 14A I-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고31,242

IRFU110PBF

Vishay Siliconix

MOSFET N-CH 100V 4.3A I-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 540 mOhm @ 900mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251AA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

패키지: TO-251-3 Short Leads, IPak, TO-251AA

재고19,200

SI5915BDC-T1-E3

Vishay Siliconix

MOSFET 2P-CH 8V 4A 1206-8

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 4A
Rds On (Max) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 420pF @ 4V
Power - Max: 3.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET?

패키지: 8-SMD, Flat Lead

재고60,720

SIP21108DR-T1-E3

Vishay Siliconix

IC REG LIN POS ADJ 150MA SC70-5

Output Configuration: Positive
Output Type: Adjustable
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 5.78V
Voltage Dropout (Max): 0.22V @ 150mA
Current - Output: 150mA
Current - Quiescent (Iq): -
Current - Supply (Max): 85µA
PSRR: 72dB ~ 38dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SC-70-5

패키지: 5-TSSOP, SC-70-5, SOT-353

재고7,440

SI9112DY-T1-E3

Vishay Siliconix

IC REG CTRLR MULT TOP 14SOIC

Output Type: Transistor Driver
Function: Step-Up/Step-Down
Output Configuration: Positive
Topology: Cuk, Flyback, Forward Converter, Push-Pull
Number of Outputs: 1
Output Phases: 1
Voltage - Supply (Vcc/Vdd): 9 V ~ 13.5 V
Frequency - Switching: 40kHz ~ 1MHz
Duty Cycle (Max): -
Synchronous Rectifier: No
Clock Sync: No
Serial Interfaces: -
Control Features: Enable, Reset
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고9,456

SIP32459DB-T2-GE1

Vishay Siliconix

IC SW W/CTRL SLEW RATE WCSP6

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 1.5 V ~ 5.5 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Rds On (Typ): 20 mOhm
Input Type: Non-Inverting
Features: Load Discharge, Slew Rate Controlled
Fault Protection: -
Operating Temperature: -40°C ~ 125°C (TJ)
Package / Case: 6-UFBGA, CSPBGA
Supplier Device Package: 6-WLCSP (1.46x0.96)

패키지: 6-UFBGA, CSPBGA

재고24,918

SIP32419DN-T1-GE4

Vishay Siliconix

LOAD SWITCH 3A 28V 10DFN

Switch Type: General Purpose
Number of Outputs: 1
Ratio - Input:Output: 1:1
Output Configuration: High Side
Output Type: P-Channel
Interface: On/Off
Voltage - Load: 6 V ~ 28 V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Rds On (Typ): 56 mOhm
Input Type: Non-Inverting
Features: Power Good, Slew Rate Controlled, Status Flag
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)

패키지: 10-VFDFN Exposed Pad

재고102,180

SIC620CD-T1-GE3

Vishay Siliconix

IC CTLR STAGE 60A PPAK MLP55-31L

Output Configuration: Half Bridge
Applications: Synchronous Buck Converters
Interface: PWM
Load Type: Inductive
Technology: Power MOSFET
Rds On (Typ): -
Current - Output / Channel: 60A
Current - Peak Output: -
Voltage - Supply: 4.5 V ~ 5.5 V
Voltage - Load: 4.5 V ~ 18 V
Operating Temperature: -40°C ~ 150°C (TJ)
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Fault Protection: Over Temperature, Shoot-Through, UVLO
Mounting Type: Surface Mount
Package / Case: PowerPAK? MLP55-31L
Supplier Device Package: PowerPAK? MLP55-31L

패키지: PowerPAK? MLP55-31L

재고17,316

SJM187BXC

Vishay Siliconix

IC ANALOG SWITCH

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,792

DG308BAK/883

Vishay Siliconix

IC SWITCH QUAD SPST 16DIP

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 85 Ohm
Channel-to-Channel Matching (ΔRon): 1.7 Ohm
Voltage - Supply, Single (V+): 4 V ~ 44 V
Voltage - Supply, Dual (V±): ±4 V ~ 22 V
Switch Time (Ton, Toff) (Max): 200ns, 150ns
-3db Bandwidth: -
Charge Injection: 1pC
Channel Capacitance (CS(off), CD(off)): 5pF, 5pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-CDIP (0.300", 7.62mm)
Supplier Device Package: 16-CERDIP

패키지: 16-CDIP (0.300", 7.62mm)

재고3,376

DG221BDY

Vishay Siliconix

IC SWITCH QUAD SPST/CMOS 16SOIC

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 90 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 550ns, 340ns
-3db Bandwidth: -
Charge Injection: 20pC
Channel Capacitance (CS(off), CD(off)): 8pF, 9pF
Current - Leakage (IS(off)) (Max): 5nA
Crosstalk: -90dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고7,808

DG612EEN-T1-GE4

Vishay Siliconix

IC AMP/VIDEO/MUX LP 16QFN

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 115 Ohm
Channel-to-Channel Matching (ΔRon): 600 mOhm
Voltage - Supply, Single (V+): 3 V ~ 12 V
Voltage - Supply, Dual (V±): ±3 V ~ 5 V
Switch Time (Ton, Toff) (Max): 50ns, 35ns
-3db Bandwidth: 1GHz
Charge Injection: 1.4pC
Channel Capacitance (CS(off), CD(off)): 3pF, 3pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -74dB @ 10MHz
Operating Temperature: -40°C ~ 125°C (TA)
Package / Case: 16-UFQFN
Supplier Device Package: 16-miniQFN (1.8x2.6)

패키지: 16-UFQFN

재고23,994

SQJ479EP-T1_BE3

Vishay Siliconix

P-CHANNEL 80-V (D-S) 175C MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

패키지: -

재고24,423

SI6423ADQ-T1-GE3

Vishay Siliconix

MOSFET PCH 20V 10.3/12.5A 8TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 12.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 5875 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta), 2.2W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 10A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

패키지: -

재고18,000

SI1965DH-T1-BE3

Vishay Siliconix

MOSFET 2P-CH 12V 1.3A SC70-6

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 1.14A (Ta), 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 6V
Power - Max: 740mW (Ta), 1.25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6

패키지: -

Request a Quote

IRFR014TRPBF-BE3

Vishay Siliconix

MOSFET N-CH 60V 7.7A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

패키지: -

재고324

SQ2319ES-T1-GE3

Vishay Siliconix

MOSFET P-CH 40V 4.6A TO-236

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

Request a Quote

SQ2318BES-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 8A SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3

패키지: -

재고30

SIZ342ADT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 15.7A 8PWR33

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15.7A (Ta), 33.4A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 580pF @ 15V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-Power33 (3x3)

패키지: -

재고36,255