페이지 46 - Vishay Siliconix 제품

부품 번호	제조업체	설명	패키지	재고
2N4856JAN02	Vishay Siliconix	MOSFET N-CH 40V 50MA TO-18 FET Type: - Voltage - Breakdown (V(BR)GSS): - Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): - Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: - Input Capacitance (Ciss) (Max) @ Vds: - Resistance - RDS(On): - Power - Max: - Operating Temperature: - Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고3,568
2N4393	Vishay Siliconix	MOSFET N-CH 40V .1NA TO-18 FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): - Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V Current Drain (Id) - Max: - Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V Resistance - RDS(On): 100 Ohm Power - Max: 1.8W Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-206AA (TO-18)	패키지: TO-206AA, TO-18-3 Metal Can	재고14,040
SI6443DQ-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 7.3A 8-TSSOP FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.05W (Ta) Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSSOP Package / Case: 8-TSSOP (0.173", 4.40mm Width)	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고36,000
SI5484DU-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 12A PPAK CHIPFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? ChipFet Single Package / Case: PowerPAK? ChipFET? Single	패키지: PowerPAK? ChipFET? Single	재고30,000
SI4876DY-T1-E3	Vishay Siliconix	MOSFET N-CH 20V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고561,900
IRFB11N50A	Vishay Siliconix	MOSFET N-CH 500V 11A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고459,180
IRF9530	Vishay Siliconix	MOSFET P-CH 100V 12A TO-220AB FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고143,304
SI4408DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 20V 14A 8-SOIC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 21A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,664
SUP85N03-3M6P-GE3	Vishay Siliconix	MOSFET N-CH 30V 85A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.1W (Ta), 78.1W (Tc) Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 22A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고62,268
SUD35N10-26P-T4GE3	Vishay Siliconix	MOSFET N-CH 100V 35A TO252 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 12V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 26 mOhm @ 12A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-252, (D-Pak) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	패키지: TO-252-3, DPak (2 Leads + Tab), SC-63	재고61,452
IRFB17N50LPBF	Vishay Siliconix	MOSFET N-CH 500V 16A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 220W (Tc) Rds On (Max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	패키지: TO-220-3	재고24,000
SI4542DY-T1-GE3	Vishay Siliconix	MOSFET N/P-CH 30V 8-SOIC FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,392
SI4276DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V Power - Max: 3.6W, 2.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,952
SI1972DH-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 1.3A SC-70-6 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.3A Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V Power - Max: 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363)	패키지: 6-TSSOP, SC-88, SOT-363	재고526,224
SI1028X-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V SC89-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V Power - Max: 220mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	패키지: SOT-563, SOT-666	재고42,000
SI91871DMP-25-E3	Vishay Siliconix	IC REG LIN 2.5V POWERPAKMLP33-5 Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 6V Voltage - Output (Min/Fixed): 2.5V Voltage - Output (Max): - Voltage Dropout (Max): 0.57V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): - Current - Supply (Max): 150µA ~ 275µA PSRR: 60dB ~ 30dB (1kHz ~ 100kHz) Control Features: Enable Protection Features: Over Temperature, Reverse Polarity, Short Circuit Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: PowerPAK? MLP33-5 Supplier Device Package: PowerPAK? MLP33-5	패키지: PowerPAK? MLP33-5	재고5,456
SJM191BXC	Vishay Siliconix	IC ANALOG SWITCH Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): - Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,400
DG418DY	Vishay Siliconix	IC ANALOG SWITCH CMOS 8SOIC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 35 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 175ns, 145ns -3db Bandwidth: - Charge Injection: 60pC Channel Capacitance (CS(off), CD(off)): 8pF, 8pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고330,108
DG417BDY-T1-E3	Vishay Siliconix	IC SWITCH QUAD SPST 8SOIC Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 25 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 89ns, 80ns -3db Bandwidth: - Charge Injection: 38pC Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: - Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,480
DG441BDY-T1-E3	Vishay Siliconix	IC SWITCH QUAD SPST 16SOIC Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 80 Ohm Channel-to-Channel Matching (ΔRon): 2 Ohm Voltage - Supply, Single (V+): 12V Voltage - Supply, Dual (V±): ±15V Switch Time (Ton, Toff) (Max): 220ns, 120ns -3db Bandwidth: - Charge Injection: -1pC Channel Capacitance (CS(off), CD(off)): 4pF, 4pF Current - Leakage (IS(off)) (Max): 500pA Crosstalk: -95dB @ 100kHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고6,000
DG9233EDY-GE3	Vishay Siliconix	IC SWITCH DUAL SPST 8SOIC Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 2 On-State Resistance (Max): 25 Ohm Channel-to-Channel Matching (ΔRon): 400 mOhm Voltage - Supply, Single (V+): 2.7 V ~ 5.5 V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 75ns, 50ns -3db Bandwidth: - Charge Injection: -0.78pC Channel Capacitance (CS(off), CD(off)): 3.8pF Current - Leakage (IS(off)) (Max): 100pA Crosstalk: -108dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고11,052
DG411DJ-E3	Vishay Siliconix	IC SWITCH QUAD SPST 16-DIP Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 4 On-State Resistance (Max): 35 Ohm Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 5 V ~ 44 V Voltage - Supply, Dual (V±): ±5 V ~ 20 V Switch Time (Ton, Toff) (Max): 175ns, 145ns -3db Bandwidth: - Charge Injection: 5pC Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Crosstalk: -85dB @ 1MHz Operating Temperature: -40°C ~ 85°C (TA) Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: 16-DIP (0.300", 7.62mm)	재고51,600
DG2524DN-T1-GE4	Vishay Siliconix	IC SWITCH SPDT X 4 550MOHM 16QFN Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 1:2 Number of Circuits: 4 On-State Resistance (Max): 550mOhm Channel-to-Channel Matching (ΔRon): 50mOhm Voltage - Supply, Single (V+): 1.8V ~ 5.5V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): 60µs, 1µs -3db Bandwidth: 310MHz Charge Injection: -19pC Channel Capacitance (CS(off), CD(off)): 14.5pF Current - Leakage (IS(off)) (Max): 1nA Crosstalk: -89dB @ 100kHz Operating Temperature: -40°C ~ 85°C Package / Case: 16-VFQFN Exposed Pad Supplier Device Package: 16-QFN (3x3)	패키지: -	재고18,396
SQA403EJ-T1_GE3	Vishay Siliconix	MOSFET P-CH 30V 10A PPAK SC70-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SC-70-6 Package / Case: PowerPAK® SC-70-6	패키지: -	재고46,518
SI3460DDV-T1-BE3	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-TSOP Package / Case: SOT-23-6 Thin, TSOT-23-6	패키지: -	Request a Quote
SQM30010EL_GE3	Vishay Siliconix	MOSFET N-CH 30V 120A TO263 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 40A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (D2PAK) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	패키지: -	Request a Quote
DG9233EDS-T1-GE3	Vishay Siliconix	IC SWITCH DUAL SPST SOT23-8 Switch Circuit: - Multiplexer/Demultiplexer Circuit: - Number of Circuits: - On-State Resistance (Max): - Channel-to-Channel Matching (ΔRon): - Voltage - Supply, Single (V+): 2.7V ~ 5.5V Voltage - Supply, Dual (V±): - Switch Time (Ton, Toff) (Max): - -3db Bandwidth: - Charge Injection: - Channel Capacitance (CS(off), CD(off)): - Current - Leakage (IS(off)) (Max): - Crosstalk: - Operating Temperature: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote
SIRA50ADP-T1-RE3	Vishay Siliconix	MOSFET N-CH 40V 54.8A/219A PPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 20 V Vgs (Max): +20V, -16V FET Feature: - Power Dissipation (Max): 6.25W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK® SO-8 Package / Case: PowerPAK® SO-8	패키지: -	재고26,034

2N4856JAN02

Vishay Siliconix

MOSFET N-CH 40V 50MA TO-18

FET Type: -
Voltage - Breakdown (V(BR)GSS): -
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): -
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: -
Input Capacitance (Ciss) (Max) @ Vds: -
Resistance - RDS(On): -
Power - Max: -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고3,568

2N4393

Vishay Siliconix

MOSFET N-CH 40V .1NA TO-18

FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): -
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Current Drain (Id) - Max: -
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohm
Power - Max: 1.8W
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)

패키지: TO-206AA, TO-18-3 Metal Can

재고14,040

SI6443DQ-T1-E3

Vishay Siliconix

MOSFET P-CH 30V 7.3A 8-TSSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.05W (Ta)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 8.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-TSSOP
Package / Case: 8-TSSOP (0.173", 4.40mm Width)

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고36,000

SI5484DU-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 12A PPAK CHIPFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 16 mOhm @ 7.6A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? ChipFet Single
Package / Case: PowerPAK? ChipFET? Single

패키지: PowerPAK? ChipFET? Single

재고30,000

SI4876DY-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 14A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 5 mOhm @ 21A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고561,900

IRFB11N50A

Vishay Siliconix

MOSFET N-CH 500V 11A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 520 mOhm @ 6.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고459,180

IRF9530

Vishay Siliconix

MOSFET P-CH 100V 12A TO-220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고143,304

SI4408DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 14A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 21A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,664

SUP85N03-3M6P-GE3

Vishay Siliconix

MOSFET N-CH 30V 85A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3535pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.1W (Ta), 78.1W (Tc)
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 22A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고62,268

SUD35N10-26P-T4GE3

Vishay Siliconix

MOSFET N-CH 100V 35A TO252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 12V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 8.3W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 26 mOhm @ 12A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

패키지: TO-252-3, DPak (2 Leads + Tab), SC-63

재고61,452

IRFB17N50LPBF

Vishay Siliconix

MOSFET N-CH 500V 16A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 220W (Tc)
Rds On (Max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

패키지: TO-220-3

재고24,000

SI4542DY-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 30V 8-SOIC

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 25 mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,392

SI4276DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 8A 8-SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
Power - Max: 3.6W, 2.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,952

SI1972DH-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 1.3A SC-70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.3A
Rds On (Max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 15V
Power - Max: 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)

패키지: 6-TSSOP, SC-88, SOT-363

재고526,224

SI1028X-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V SC89-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 15V
Power - Max: 220mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

패키지: SOT-563, SOT-666

재고42,000

SI91871DMP-25-E3

Vishay Siliconix

IC REG LIN 2.5V POWERPAKMLP33-5

Output Configuration: Positive
Output Type: Fixed
Number of Regulators: 1
Voltage - Input (Max): 6V
Voltage - Output (Min/Fixed): 2.5V
Voltage - Output (Max): -
Voltage Dropout (Max): 0.57V @ 300mA
Current - Output: 300mA
Current - Quiescent (Iq): -
Current - Supply (Max): 150µA ~ 275µA
PSRR: 60dB ~ 30dB (1kHz ~ 100kHz)
Control Features: Enable
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: PowerPAK? MLP33-5
Supplier Device Package: PowerPAK? MLP33-5

패키지: PowerPAK? MLP33-5

재고5,456

SJM191BXC

Vishay Siliconix

IC ANALOG SWITCH

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): -
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,400

DG418DY

Vishay Siliconix

IC ANALOG SWITCH CMOS 8SOIC

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 35 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
-3db Bandwidth: -
Charge Injection: 60pC
Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고330,108

DG417BDY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 8SOIC

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 1
On-State Resistance (Max): 25 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 89ns, 80ns
-3db Bandwidth: -
Charge Injection: 38pC
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,480

DG441BDY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16SOIC

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 80 Ohm
Channel-to-Channel Matching (ΔRon): 2 Ohm
Voltage - Supply, Single (V+): 12V
Voltage - Supply, Dual (V±): ±15V
Switch Time (Ton, Toff) (Max): 220ns, 120ns
-3db Bandwidth: -
Charge Injection: -1pC
Channel Capacitance (CS(off), CD(off)): 4pF, 4pF
Current - Leakage (IS(off)) (Max): 500pA
Crosstalk: -95dB @ 100kHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고6,000

DG9233EDY-GE3

Vishay Siliconix

IC SWITCH DUAL SPST 8SOIC

Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 2
On-State Resistance (Max): 25 Ohm
Channel-to-Channel Matching (ΔRon): 400 mOhm
Voltage - Supply, Single (V+): 2.7 V ~ 5.5 V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 75ns, 50ns
-3db Bandwidth: -
Charge Injection: -0.78pC
Channel Capacitance (CS(off), CD(off)): 3.8pF
Current - Leakage (IS(off)) (Max): 100pA
Crosstalk: -108dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고11,052

DG411DJ-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16-DIP

Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Number of Circuits: 4
On-State Resistance (Max): 35 Ohm
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 5 V ~ 44 V
Voltage - Supply, Dual (V±): ±5 V ~ 20 V
Switch Time (Ton, Toff) (Max): 175ns, 145ns
-3db Bandwidth: -
Charge Injection: 5pC
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Crosstalk: -85dB @ 1MHz
Operating Temperature: -40°C ~ 85°C (TA)
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: 16-DIP (0.300", 7.62mm)

재고51,600

DG2524DN-T1-GE4

Vishay Siliconix

IC SWITCH SPDT X 4 550MOHM 16QFN

Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Number of Circuits: 4
On-State Resistance (Max): 550mOhm
Channel-to-Channel Matching (ΔRon): 50mOhm
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): 60µs, 1µs
-3db Bandwidth: 310MHz
Charge Injection: -19pC
Channel Capacitance (CS(off), CD(off)): 14.5pF
Current - Leakage (IS(off)) (Max): 1nA
Crosstalk: -89dB @ 100kHz
Operating Temperature: -40°C ~ 85°C
Package / Case: 16-VFQFN Exposed Pad
Supplier Device Package: 16-QFN (3x3)

패키지: -

재고18,396

SQA403EJ-T1_GE3

Vishay Siliconix

MOSFET P-CH 30V 10A PPAK SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 10 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SC-70-6
Package / Case: PowerPAK® SC-70-6

패키지: -

재고46,518

SI3460DDV-T1-BE3

Vishay Siliconix

N-CHANNEL 20-V (D-S) MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 7.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 10 V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6

패키지: -

Request a Quote

SQM30010EL_GE3

Vishay Siliconix

MOSFET N-CH 30V 120A TO263

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 40A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2PAK)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

패키지: -

Request a Quote

DG9233EDS-T1-GE3

Vishay Siliconix

IC SWITCH DUAL SPST SOT23-8

Switch Circuit: -
Multiplexer/Demultiplexer Circuit: -
Number of Circuits: -
On-State Resistance (Max): -
Channel-to-Channel Matching (ΔRon): -
Voltage - Supply, Single (V+): 2.7V ~ 5.5V
Voltage - Supply, Dual (V±): -
Switch Time (Ton, Toff) (Max): -
-3db Bandwidth: -
Charge Injection: -
Channel Capacitance (CS(off), CD(off)): -
Current - Leakage (IS(off)) (Max): -
Crosstalk: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

SIRA50ADP-T1-RE3

Vishay Siliconix

MOSFET N-CH 40V 54.8A/219A PPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 54.8A (Ta), 219A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 20 V
Vgs (Max): +20V, -16V
FET Feature: -
Power Dissipation (Max): 6.25W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

패키지: -

재고26,034